DE69128829D1 - Feldeffekttransistor und Verfahren zur Herstellung - Google Patents

Feldeffekttransistor und Verfahren zur Herstellung

Info

Publication number
DE69128829D1
DE69128829D1 DE69128829T DE69128829T DE69128829D1 DE 69128829 D1 DE69128829 D1 DE 69128829D1 DE 69128829 T DE69128829 T DE 69128829T DE 69128829 T DE69128829 T DE 69128829T DE 69128829 D1 DE69128829 D1 DE 69128829D1
Authority
DE
Germany
Prior art keywords
manufacturing
field effect
effect transistor
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69128829T
Other languages
English (en)
Other versions
DE69128829T2 (de
Inventor
Yasutaka Kohno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69128829D1 publication Critical patent/DE69128829D1/de
Publication of DE69128829T2 publication Critical patent/DE69128829T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69128829T 1990-11-28 1991-11-26 Feldeffekttransistor und Verfahren zur Herstellung Expired - Fee Related DE69128829T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2335833A JPH04199518A (ja) 1990-11-28 1990-11-28 電界効果トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69128829D1 true DE69128829D1 (de) 1998-03-05
DE69128829T2 DE69128829T2 (de) 1998-09-24

Family

ID=18292917

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128829T Expired - Fee Related DE69128829T2 (de) 1990-11-28 1991-11-26 Feldeffekttransistor und Verfahren zur Herstellung

Country Status (3)

Country Link
EP (1) EP0498993B1 (de)
JP (1) JPH04199518A (de)
DE (1) DE69128829T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5378879A (en) * 1993-04-20 1995-01-03 Raychem Corporation Induction heating of loaded materials
JPH09139494A (ja) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体装置の製造方法，及び半導体装置
US6207976B1 (en) 1997-12-17 2001-03-27 Fujitsu Limited Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof
US6924218B2 (en) 2002-12-17 2005-08-02 Raytheon Company Sulfide encapsulation passivation technique
US7030032B2 (en) 2003-05-13 2006-04-18 Raytheon Company Photodiode passivation technique

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115868A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd 電界効果トランジスタの製造方法
JPS58141576A (ja) * 1982-02-17 1983-08-22 Nec Corp 電界効果型トランジスタ
JPS58194373A (ja) * 1982-05-10 1983-11-12 Nec Corp 半導体装置の製造方法
JPS59172728A (ja) * 1983-03-22 1984-09-29 Fujitsu Ltd 半導体装置
US4811077A (en) * 1987-06-18 1989-03-07 International Business Machines Corporation Compound semiconductor surface termination
JPH02129929A (ja) * 1988-11-09 1990-05-18 Toshiba Corp 化合物半導体電界効果トランジスタの製造方法
JPH02170417A (ja) * 1988-12-23 1990-07-02 Toshiba Corp 化合物半導体装置の電極の製造方法
JPH0770546B2 (ja) * 1989-12-15 1995-07-31 松下電器産業株式会社 ＧａＡｓ電界効果型トランジスタの製造方法
JP2830414B2 (ja) * 1990-08-01 1998-12-02 住友電気工業株式会社 Ｍｅｓ構造電極の形成方法
JPH04184939A (ja) * 1990-11-20 1992-07-01 Nikko Kyodo Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH04199518A (ja) 1992-07-20
EP0498993B1 (de) 1998-01-28
DE69128829T2 (de) 1998-09-24
EP0498993A2 (de) 1992-08-19
EP0498993A3 (en) 1992-10-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee