DE69425748D1 - Transistoren und verfahren zur herstellung - Google Patents
Transistoren und verfahren zur herstellungInfo
- Publication number
- DE69425748D1 DE69425748D1 DE69425748T DE69425748T DE69425748D1 DE 69425748 D1 DE69425748 D1 DE 69425748D1 DE 69425748 T DE69425748 T DE 69425748T DE 69425748 T DE69425748 T DE 69425748T DE 69425748 D1 DE69425748 D1 DE 69425748D1
- Authority
- DE
- Germany
- Prior art keywords
- transistors
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/009—Bi-MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/085,436 US5389553A (en) | 1993-06-30 | 1993-06-30 | Methods for fabrication of transistors |
PCT/US1994/006907 WO1995001653A1 (en) | 1993-06-30 | 1994-06-17 | Transistors and methods for fabrication thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69425748D1 true DE69425748D1 (de) | 2000-10-05 |
DE69425748T2 DE69425748T2 (de) | 2001-04-19 |
Family
ID=22191580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69425748T Expired - Fee Related DE69425748T2 (de) | 1993-06-30 | 1994-06-17 | Transistoren und Verfahren zu deren Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5389553A (de) |
EP (1) | EP0706716B1 (de) |
DE (1) | DE69425748T2 (de) |
WO (1) | WO1995001653A1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5529948A (en) * | 1994-07-18 | 1996-06-25 | United Microelectronics Corporation | LOCOS technology with reduced junction leakage |
US5449627A (en) * | 1994-12-14 | 1995-09-12 | United Microelectronics Corporation | Lateral bipolar transistor and FET compatible process for making it |
US5541433A (en) * | 1995-03-08 | 1996-07-30 | Integrated Device Technology, Inc. | High speed poly-emitter bipolar transistor |
US10973545B2 (en) | 2002-05-31 | 2021-04-13 | Teleflex Life Sciences Limited | Powered drivers, intraosseous devices and methods to access bone marrow |
US7811260B2 (en) | 2002-05-31 | 2010-10-12 | Vidacare Corporation | Apparatus and method to inject fluids into bone marrow and other target sites |
US7951089B2 (en) * | 2002-05-31 | 2011-05-31 | Vidacare Corporation | Apparatus and methods to harvest bone and bone marrow |
JP4938979B2 (ja) | 2002-05-31 | 2012-05-23 | ヴァイダケア、コーパレイシャン | 骨髄にアクセスする装置および方法 |
WO2008033871A2 (en) * | 2006-09-12 | 2008-03-20 | Vidacare Corporation | Apparatus and methods for biopsy and aspiration of bone marrow |
US10973532B2 (en) | 2002-05-31 | 2021-04-13 | Teleflex Life Sciences Limited | Powered drivers, intraosseous devices and methods to access bone marrow |
US8641715B2 (en) | 2002-05-31 | 2014-02-04 | Vidacare Corporation | Manual intraosseous device |
WO2008033872A2 (en) * | 2006-09-12 | 2008-03-20 | Vidacare Corporation | Biopsy devices and related methods |
US8668698B2 (en) | 2002-05-31 | 2014-03-11 | Vidacare Corporation | Assembly for coupling powered driver with intraosseous device |
US20070049945A1 (en) | 2002-05-31 | 2007-03-01 | Miller Larry J | Apparatus and methods to install, support and/or monitor performance of intraosseous devices |
US11337728B2 (en) | 2002-05-31 | 2022-05-24 | Teleflex Life Sciences Limited | Powered drivers, intraosseous devices and methods to access bone marrow |
US9504477B2 (en) | 2003-05-30 | 2016-11-29 | Vidacare LLC | Powered driver |
US8944069B2 (en) | 2006-09-12 | 2015-02-03 | Vidacare Corporation | Assemblies for coupling intraosseous (IO) devices to powered drivers |
US9123558B2 (en) * | 2011-06-20 | 2015-09-01 | Mediatek Inc. | Bipolar junction transistor |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7709363A (nl) * | 1977-08-25 | 1979-02-27 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze. |
US4400865A (en) * | 1980-07-08 | 1983-08-30 | International Business Machines Corporation | Self-aligned metal process for integrated circuit metallization |
JPH0719838B2 (ja) * | 1985-07-19 | 1995-03-06 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
US4738624A (en) * | 1987-04-13 | 1988-04-19 | International Business Machines Corporation | Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor |
US4877748A (en) * | 1987-05-01 | 1989-10-31 | Texas Instruments Incorporated | Bipolar process for forming shallow NPN emitters |
JP2615646B2 (ja) * | 1987-08-11 | 1997-06-04 | ソニー株式会社 | バイポーラトランジスタの製造方法 |
JPH01140761A (ja) * | 1987-11-27 | 1989-06-01 | Nec Corp | 半導体装置 |
US5075241A (en) * | 1988-01-29 | 1991-12-24 | Texas Instruments Incorporated | Method of forming a recessed contact bipolar transistor and field effect device |
JPH01274470A (ja) * | 1988-04-26 | 1989-11-02 | Nec Corp | バイポーラ・トランジスタ装置及びその製造方法 |
US5098853A (en) * | 1988-11-02 | 1992-03-24 | Hughes Aircraft Company | Self-aligned, planar heterojunction bipolar transistor and method of forming the same |
US5024957A (en) * | 1989-02-13 | 1991-06-18 | International Business Machines Corporation | Method of fabricating a bipolar transistor with ultra-thin epitaxial base |
JPH0744186B2 (ja) * | 1989-03-13 | 1995-05-15 | 株式会社東芝 | 半導体装置の製造方法 |
US5139961A (en) * | 1990-04-02 | 1992-08-18 | National Semiconductor Corporation | Reducing base resistance of a bjt by forming a self aligned silicide in the single crystal region of the extrinsic base |
EP0452720A3 (en) * | 1990-04-02 | 1994-10-26 | Nat Semiconductor Corp | A semiconductor structure and method of its manufacture |
US5139966A (en) * | 1990-04-02 | 1992-08-18 | National Semiconductor Corporation | Low resistance silicided substrate contact |
US5124775A (en) * | 1990-07-23 | 1992-06-23 | National Semiconductor Corporation | Semiconductor device with oxide sidewall |
JP3127455B2 (ja) * | 1990-08-31 | 2001-01-22 | ソニー株式会社 | 半導体装置の製法 |
-
1993
- 1993-06-30 US US08/085,436 patent/US5389553A/en not_active Expired - Lifetime
-
1994
- 1994-06-17 DE DE69425748T patent/DE69425748T2/de not_active Expired - Fee Related
- 1994-06-17 WO PCT/US1994/006907 patent/WO1995001653A1/en active IP Right Grant
- 1994-06-17 EP EP94923211A patent/EP0706716B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69425748T2 (de) | 2001-04-19 |
EP0706716B1 (de) | 2000-08-30 |
US5389553A (en) | 1995-02-14 |
WO1995001653A1 (en) | 1995-01-12 |
EP0706716A1 (de) | 1996-04-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |