DE69621088T2 - Bipolartransistor und Verfahren zur Herstellung - Google Patents

Bipolartransistor und Verfahren zur Herstellung

Info

Publication number
DE69621088T2
DE69621088T2 DE69621088T DE69621088T DE69621088T2 DE 69621088 T2 DE69621088 T2 DE 69621088T2 DE 69621088 T DE69621088 T DE 69621088T DE 69621088 T DE69621088 T DE 69621088T DE 69621088 T2 DE69621088 T2 DE 69621088T2
Authority
DE
Germany
Prior art keywords
manufacturing
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69621088T
Other languages
English (en)
Other versions
DE69621088D1 (de
Inventor
Toru Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69621088D1 publication Critical patent/DE69621088D1/de
Application granted granted Critical
Publication of DE69621088T2 publication Critical patent/DE69621088T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H01L29/0826—Pedestal collectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE69621088T 1995-08-31 1996-08-27 Bipolartransistor und Verfahren zur Herstellung Expired - Fee Related DE69621088T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7246927A JP2748898B2 (ja) 1995-08-31 1995-08-31 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69621088D1 DE69621088D1 (de) 2002-06-13
DE69621088T2 true DE69621088T2 (de) 2002-12-19

Family

ID=17155835

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69621088T Expired - Fee Related DE69621088T2 (de) 1995-08-31 1996-08-27 Bipolartransistor und Verfahren zur Herstellung

Country Status (6)

Country Link
US (1) US5880516A (de)
EP (1) EP0762511B1 (de)
JP (1) JP2748898B2 (de)
KR (1) KR100206081B1 (de)
CN (1) CN1050006C (de)
DE (1) DE69621088T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE511891C2 (sv) * 1997-08-29 1999-12-13 Ericsson Telefon Ab L M Bipolär effekttransistor och framställningsförfarande
JP3186691B2 (ja) * 1998-04-07 2001-07-11 日本電気株式会社 半導体装置及びその形成方法
FR2779571B1 (fr) 1998-06-05 2003-01-24 St Microelectronics Sa Procede de dopage selectif du collecteur intrinseque d'un transistor bipolaire vertical a base epitaxiee
US6762479B2 (en) 1998-11-06 2004-07-13 International Business Machines Corporation Microwave array transistor for low-noise and high-power applications
JP3506632B2 (ja) * 1999-03-25 2004-03-15 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP3346348B2 (ja) 1999-08-19 2002-11-18 日本電気株式会社 半導体装置の製造方法
DE19957113A1 (de) 1999-11-26 2001-06-07 Infineon Technologies Ag Verfahren zur Herstellung eines aktiven Transistorgebietes
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same
US20020177253A1 (en) * 2001-05-25 2002-11-28 International Business Machines Corporation Process for making a high voltage NPN Bipolar device with improved AC performance
DE10160509A1 (de) 2001-11-30 2003-06-12 Ihp Gmbh Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE10160511A1 (de) * 2001-11-30 2003-06-12 Ihp Gmbh Bipolarer Transistor
US6838350B2 (en) * 2003-04-25 2005-01-04 Micrel, Inc. Triply implanted complementary bipolar transistors
US7253073B2 (en) * 2004-01-23 2007-08-07 International Business Machines Corporation Structure and method for hyper-abrupt junction varactors
JP2005217237A (ja) * 2004-01-30 2005-08-11 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4906267B2 (ja) * 2005-03-31 2012-03-28 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP5048242B2 (ja) * 2005-11-30 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
US20080217742A1 (en) * 2007-03-09 2008-09-11 International Business Machines Corporation Tailored bipolar transistor doping profile for improved reliability
CN101834136A (zh) * 2010-05-12 2010-09-15 上海宏力半导体制造有限公司 改善双极性晶体管的发射极表面硅化物层的方法
CN101937846B (zh) * 2010-09-10 2015-10-21 上海华虹宏力半导体制造有限公司 SiGe HBT晶体管及其制造方法
CN102664191B (zh) * 2012-05-16 2014-10-15 清华大学 嵌入式外延外基区双极晶体管及其制备方法
RU2659328C1 (ru) * 2017-10-02 2018-06-29 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора
CN108109914A (zh) * 2017-12-18 2018-06-01 深圳市晶特智造科技有限公司 双极晶体管的制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4165516A (en) * 1975-04-28 1979-08-21 U.S. Philips Corporation Semiconductor device and method of manufacturing same
US4392149A (en) * 1980-03-03 1983-07-05 International Business Machines Corporation Bipolar transistor
JPS6393153A (ja) * 1986-10-07 1988-04-23 Toshiba Corp 半導体装置の製造方法
JP2728671B2 (ja) * 1988-02-03 1998-03-18 株式会社東芝 バイポーラトランジスタの製造方法
JPH01253272A (ja) * 1988-03-31 1989-10-09 Nec Corp バイポーラトランジスタ
EP0418421B1 (de) * 1989-09-22 1998-08-12 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Bipolartransistors mit verminderter Basis/Kollektor-Kapazität
JPH03138946A (ja) * 1989-10-24 1991-06-13 Sony Corp 半導体装置
JPH0451526A (ja) * 1990-06-19 1992-02-20 Fujitsu Ltd 半導体装置およびその製造方法
JPH06216145A (ja) * 1992-01-28 1994-08-05 Fujitsu Ltd 半導体装置の製造方法
JPH05259175A (ja) * 1992-03-12 1993-10-08 Fujitsu Ltd 半導体装置の製造方法
JP2551353B2 (ja) * 1993-10-07 1996-11-06 日本電気株式会社 半導体装置及びその製造方法
US5501991A (en) * 1994-07-13 1996-03-26 Winbond Electronics Corporation Process for making a bipolar junction transistor with a self-aligned base contact
US5548158A (en) * 1994-09-02 1996-08-20 National Semiconductor Corporation Structure of bipolar transistors with improved output current-voltage characteristics
US5581115A (en) * 1994-10-07 1996-12-03 National Semiconductor Corporation Bipolar transistors using isolated selective doping to improve performance characteristics

Also Published As

Publication number Publication date
CN1050006C (zh) 2000-03-01
JPH0969528A (ja) 1997-03-11
EP0762511B1 (de) 2002-05-08
DE69621088D1 (de) 2002-06-13
US5880516A (en) 1999-03-09
KR100206081B1 (ko) 1999-07-01
JP2748898B2 (ja) 1998-05-13
CN1148271A (zh) 1997-04-23
EP0762511A1 (de) 1997-03-12
KR970013321A (ko) 1997-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee