DE69637500D1 - Bipolartransistor mit epitaxialer Basis und Verfahren zur Herstellung - Google Patents
Bipolartransistor mit epitaxialer Basis und Verfahren zur HerstellungInfo
- Publication number
- DE69637500D1 DE69637500D1 DE69637500T DE69637500T DE69637500D1 DE 69637500 D1 DE69637500 D1 DE 69637500D1 DE 69637500 T DE69637500 T DE 69637500T DE 69637500 T DE69637500 T DE 69637500T DE 69637500 D1 DE69637500 D1 DE 69637500D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- bipolar transistor
- epitaxial base
- base bipolar
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7347688A JPH09167777A (ja) | 1995-12-15 | 1995-12-15 | 半導体装置及びその製造方法 |
JP34768895 | 1995-12-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69637500D1 true DE69637500D1 (de) | 2008-05-29 |
DE69637500T2 DE69637500T2 (de) | 2009-05-28 |
Family
ID=18391904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69637500T Expired - Lifetime DE69637500T2 (de) | 1995-12-15 | 1996-12-13 | Bipolartransistor mit epitaxialer Basis und Verfahren zur Herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5877540A (de) |
EP (1) | EP0779663B1 (de) |
JP (1) | JPH09167777A (de) |
KR (1) | KR100314347B1 (de) |
DE (1) | DE69637500T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2937253B2 (ja) * | 1996-01-17 | 1999-08-23 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JPH10326793A (ja) * | 1997-05-23 | 1998-12-08 | Nec Corp | 半導体装置の製造方法 |
JP2000012552A (ja) * | 1998-06-17 | 2000-01-14 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
US6331727B1 (en) * | 1998-08-07 | 2001-12-18 | Kabushiki Kaisha Toshiba | Semiconductor device and method of fabricating the same |
US6228733B1 (en) * | 1999-09-23 | 2001-05-08 | Industrial Technology Research Institute | Non-selective epitaxial depostion technology |
US6784065B1 (en) | 2001-06-15 | 2004-08-31 | National Semiconductor Corporation | Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor |
US7087979B1 (en) | 2001-06-15 | 2006-08-08 | National Semiconductor Corporation | Bipolar transistor with an ultra small self-aligned polysilicon emitter |
US6649482B1 (en) | 2001-06-15 | 2003-11-18 | National Semiconductor Corporation | Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor |
US6703685B2 (en) | 2001-12-10 | 2004-03-09 | Intel Corporation | Super self-aligned collector device for mono-and hetero bipolar junction transistors |
US6579771B1 (en) * | 2001-12-10 | 2003-06-17 | Intel Corporation | Self aligned compact bipolar junction transistor layout, and method of making same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63308377A (ja) * | 1987-06-10 | 1988-12-15 | Fujitsu Ltd | バイポ−ラトランジスタの製造方法 |
JP3132101B2 (ja) * | 1991-11-20 | 2001-02-05 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH05343413A (ja) * | 1992-06-11 | 1993-12-24 | Fujitsu Ltd | バイポーラトランジスタとその製造方法 |
JPH0758116A (ja) * | 1993-08-10 | 1995-03-03 | Toshiba Corp | 半導体装置 |
JP2720793B2 (ja) * | 1994-05-12 | 1998-03-04 | 日本電気株式会社 | 半導体装置の製造方法 |
-
1995
- 1995-12-15 JP JP7347688A patent/JPH09167777A/ja active Pending
-
1996
- 1996-12-13 EP EP96309132A patent/EP0779663B1/de not_active Expired - Lifetime
- 1996-12-13 DE DE69637500T patent/DE69637500T2/de not_active Expired - Lifetime
- 1996-12-13 US US08/766,856 patent/US5877540A/en not_active Expired - Fee Related
- 1996-12-14 KR KR1019960065637A patent/KR100314347B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69637500T2 (de) | 2009-05-28 |
US5877540A (en) | 1999-03-02 |
KR970054357A (ko) | 1997-07-31 |
EP0779663A2 (de) | 1997-06-18 |
EP0779663A3 (de) | 1997-09-03 |
EP0779663B1 (de) | 2008-04-16 |
KR100314347B1 (ko) | 2001-12-28 |
JPH09167777A (ja) | 1997-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |