DE3850219T2 - Herstellungsverfahren eines integrierten Infrarot-Photodetektors. - Google Patents

Herstellungsverfahren eines integrierten Infrarot-Photodetektors.

Info

Publication number
DE3850219T2
DE3850219T2 DE3850219T DE3850219T DE3850219T2 DE 3850219 T2 DE3850219 T2 DE 3850219T2 DE 3850219 T DE3850219 T DE 3850219T DE 3850219 T DE3850219 T DE 3850219T DE 3850219 T2 DE3850219 T2 DE 3850219T2
Authority
DE
Germany
Prior art keywords
manufacturing process
infrared photodetector
integrated infrared
integrated
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3850219T
Other languages
English (en)
Other versions
DE3850219D1 (de
Inventor
Jean-Paul Societe Civile Chane
Philippe Societe Civile Riglet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3850219D1 publication Critical patent/DE3850219D1/de
Application granted granted Critical
Publication of DE3850219T2 publication Critical patent/DE3850219T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/08—Infra-red
DE3850219T 1987-11-20 1988-11-16 Herstellungsverfahren eines integrierten Infrarot-Photodetektors. Expired - Fee Related DE3850219T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8716090A FR2623664B1 (fr) 1987-11-20 1987-11-20 Procede de realisation d'un photodetecteur infrarouge integre

Publications (2)

Publication Number Publication Date
DE3850219D1 DE3850219D1 (de) 1994-07-21
DE3850219T2 true DE3850219T2 (de) 1995-02-02

Family

ID=9356998

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850219T Expired - Fee Related DE3850219T2 (de) 1987-11-20 1988-11-16 Herstellungsverfahren eines integrierten Infrarot-Photodetektors.

Country Status (6)

Country Link
US (1) US4904607A (de)
EP (1) EP0317024B1 (de)
JP (1) JP2760531B2 (de)
KR (1) KR970007131B1 (de)
DE (1) DE3850219T2 (de)
FR (1) FR2623664B1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965649A (en) * 1988-12-23 1990-10-23 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays
DE69030129T2 (de) * 1989-04-12 1997-10-09 Sumitomo Electric Industries Herstellungsverfahren einer integrierten Halbleiterschaltung
US5141878A (en) * 1990-04-02 1992-08-25 At&T Bell Laboratories Silicon photodiode for monolithic integrated circuits and method for making same
US5239193A (en) * 1990-04-02 1993-08-24 At&T Bell Laboratories Silicon photodiode for monolithic integrated circuits
US5239296A (en) * 1991-10-23 1993-08-24 Black Box Technologies Method and apparatus for receiving optical signals used to determine vehicle velocity
US5268310A (en) * 1992-11-25 1993-12-07 M/A-Com, Inc. Method for making a mesa type PIN diode
US5386128A (en) * 1994-01-21 1995-01-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output
US5898196A (en) * 1997-10-10 1999-04-27 International Business Machines Corporation Dual EPI active pixel cell design and method of making the same
US6555440B1 (en) 2000-06-05 2003-04-29 Agilent Technologies, Inc. Process for fabricating a top side pitted diode device
JP4058457B2 (ja) * 2000-12-19 2008-03-12 ユーディナデバイス株式会社 半導体受光装置
US6881986B1 (en) 2001-11-07 2005-04-19 Taiwan Semiconductor Manufacturing Company Design and fabrication method for finger n-type doped photodiodes with high sensitivity for CIS products
KR20080061021A (ko) * 2006-12-27 2008-07-02 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
US8963274B2 (en) * 2013-03-15 2015-02-24 Sensors Unlimited, Inc. Epitaxial structure for vertically integrated charge transfer gate technology in optoelectronic materials
JP2018037611A (ja) * 2016-09-02 2018-03-08 ソニーセミコンダクタソリューションズ株式会社 受光素子、受光素子の製造方法、撮像素子および電子機器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4314858A (en) * 1979-11-23 1982-02-09 Rockwell International Corporation Method of making a fully integrated monolithic optical receiver
JPS60251654A (ja) * 1984-05-28 1985-12-12 Fujitsu Ltd 半導体装置の製造方法
JPS6149485A (ja) * 1984-08-18 1986-03-11 Matsushita Electric Ind Co Ltd 化合物半導体素子及びその製造方法
GB2168527B (en) * 1984-12-15 1988-11-16 Stc Plc Photo-detector
GB2168528B (en) * 1984-12-15 1988-07-13 Stc Plc Photo detector integrated circuit
JPS61171176A (ja) * 1985-01-25 1986-08-01 Nec Corp 光導電性半導体受光素子の製造方法
US4745446A (en) * 1985-02-11 1988-05-17 American Telephone And Telegraph Company, At&T Bell Laboratories Photodetector and amplifier integration
US4771325A (en) * 1985-02-11 1988-09-13 American Telephone & Telegraph Co., At&T Bell Laboratories Integrated photodetector-amplifier device
JPS6236857A (ja) * 1985-08-12 1987-02-17 Hitachi Ltd 光集積素子およびその製造方法
JPS62247563A (ja) * 1986-04-18 1987-10-28 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
KR890009007A (ko) 1989-07-13
US4904607A (en) 1990-02-27
FR2623664A1 (fr) 1989-05-26
EP0317024B1 (de) 1994-06-15
JPH021994A (ja) 1990-01-08
EP0317024A1 (de) 1989-05-24
JP2760531B2 (ja) 1998-06-04
FR2623664B1 (fr) 1990-03-09
DE3850219D1 (de) 1994-07-21
KR970007131B1 (ko) 1997-05-02

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee