GB2168527B - Photo-detector - Google Patents

Photo-detector

Info

Publication number
GB2168527B
GB2168527B GB08431710A GB8431710A GB2168527B GB 2168527 B GB2168527 B GB 2168527B GB 08431710 A GB08431710 A GB 08431710A GB 8431710 A GB8431710 A GB 8431710A GB 2168527 B GB2168527 B GB 2168527B
Authority
GB
United Kingdom
Prior art keywords
photo
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08431710A
Other versions
GB8431710D0 (en
GB2168527A (en
Inventor
George Horace Brooke Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Priority to GB08431710A priority Critical patent/GB2168527B/en
Publication of GB8431710D0 publication Critical patent/GB8431710D0/en
Priority to DE19853543448 priority patent/DE3543448A1/en
Priority claimed from EP86103302A external-priority patent/EP0236526A1/en
Publication of GB2168527A publication Critical patent/GB2168527A/en
Application granted granted Critical
Publication of GB2168527B publication Critical patent/GB2168527B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1127—Devices with PN heterojunction gate
    • H01L31/1129—Devices with PN heterojunction gate the device being a field-effect phototransistor
GB08431710A 1984-12-15 1984-12-15 Photo-detector Expired GB2168527B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB08431710A GB2168527B (en) 1984-12-15 1984-12-15 Photo-detector
DE19853543448 DE3543448A1 (en) 1984-12-15 1985-12-09 Photodetector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB08431710A GB2168527B (en) 1984-12-15 1984-12-15 Photo-detector
EP86103302A EP0236526A1 (en) 1986-03-12 1986-03-12 Optical field effect transistor

Publications (3)

Publication Number Publication Date
GB8431710D0 GB8431710D0 (en) 1985-01-30
GB2168527A GB2168527A (en) 1986-06-18
GB2168527B true GB2168527B (en) 1988-11-16

Family

ID=26101779

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08431710A Expired GB2168527B (en) 1984-12-15 1984-12-15 Photo-detector

Country Status (1)

Country Link
GB (1) GB2168527B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0236526A1 (en) * 1986-03-12 1987-09-16 Itt Industries, Inc. Optical field effect transistor
US4794439A (en) * 1987-03-19 1988-12-27 General Electric Company Rear entry photodiode with three contacts
FR2623664B1 (en) * 1987-11-20 1990-03-09 Labo Electronique Physique METHOD FOR PRODUCING AN INTEGRATED INFRARED PHOTODETECTOR
US8053782B2 (en) * 2009-08-24 2011-11-08 International Business Machines Corporation Single and few-layer graphene based photodetecting devices

Also Published As

Publication number Publication date
GB8431710D0 (en) 1985-01-30
GB2168527A (en) 1986-06-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee