FR2352403A1 - Circuit integre rapide - Google Patents

Circuit integre rapide

Info

Publication number
FR2352403A1
FR2352403A1 FR7615224A FR7615224A FR2352403A1 FR 2352403 A1 FR2352403 A1 FR 2352403A1 FR 7615224 A FR7615224 A FR 7615224A FR 7615224 A FR7615224 A FR 7615224A FR 2352403 A1 FR2352403 A1 FR 2352403A1
Authority
FR
France
Prior art keywords
substrate
atoms
thickness
integrated circuit
doping concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7615224A
Other languages
English (en)
Other versions
FR2352403B1 (fr
Inventor
Claude Amouroux
Michel Brilman
Jacques Chautemps
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR7615224A priority Critical patent/FR2352403A1/fr
Publication of FR2352403A1 publication Critical patent/FR2352403A1/fr
Application granted granted Critical
Publication of FR2352403B1 publication Critical patent/FR2352403B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR7615224A 1976-05-20 1976-05-20 Circuit integre rapide Granted FR2352403A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7615224A FR2352403A1 (fr) 1976-05-20 1976-05-20 Circuit integre rapide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7615224A FR2352403A1 (fr) 1976-05-20 1976-05-20 Circuit integre rapide

Publications (2)

Publication Number Publication Date
FR2352403A1 true FR2352403A1 (fr) 1977-12-16
FR2352403B1 FR2352403B1 (fr) 1979-06-29

Family

ID=9173413

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615224A Granted FR2352403A1 (fr) 1976-05-20 1976-05-20 Circuit integre rapide

Country Status (1)

Country Link
FR (1) FR2352403A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2495379A1 (fr) * 1980-12-01 1982-06-04 Hitachi Ltd Circuit integre a semiconducteurs et procede de fabrication de ce dernier
EP0303435A2 (fr) * 1987-08-11 1989-02-15 Sony Corporation Transistors bipolaires

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2495379A1 (fr) * 1980-12-01 1982-06-04 Hitachi Ltd Circuit integre a semiconducteurs et procede de fabrication de ce dernier
US4502201A (en) * 1980-12-01 1985-03-05 Hitachi, Ltd. Semiconductor integrated circuit device and fabrication method thereof
EP0303435A2 (fr) * 1987-08-11 1989-02-15 Sony Corporation Transistors bipolaires
EP0303435A3 (en) * 1987-08-11 1990-01-03 Sony Corporation Bipolar transistors

Also Published As

Publication number Publication date
FR2352403B1 (fr) 1979-06-29

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Legal Events

Date Code Title Description
ST Notification of lapse