FR2269788A1 - Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity - Google Patents

Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity

Info

Publication number
FR2269788A1
FR2269788A1 FR7414979A FR7414979A FR2269788A1 FR 2269788 A1 FR2269788 A1 FR 2269788A1 FR 7414979 A FR7414979 A FR 7414979A FR 7414979 A FR7414979 A FR 7414979A FR 2269788 A1 FR2269788 A1 FR 2269788A1
Authority
FR
France
Prior art keywords
zone
conductivity
transistor
substrate
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7414979A
Other languages
French (fr)
Other versions
FR2269788B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7414979A priority Critical patent/FR2269788A1/en
Priority to JP50052434A priority patent/JPS50153558A/ja
Priority to DE19752519307 priority patent/DE2519307A1/en
Publication of FR2269788A1 publication Critical patent/FR2269788A1/en
Application granted granted Critical
Publication of FR2269788B1 publication Critical patent/FR2269788B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Abstract

The bistable integrated semiconductor circuit has two complementary transistors in the same substrate. The elements of both transistors are implanted in a semiconductor zone of first conductivity. Current flows in the first transistor parallel to the substrate surface, while in the second transistor it flows at right angles to this surface. The semiconductor zone has a part of very small dimensions, forming the first transistor base. A second part of large dimensions forms the second transistor collector, the bases of the two transistors not having an external access. Preferably this zone forms the actual substrate, and a contact is mounted on the substrate opposite side. The emitter of the first or second transistor is provided with two contacts. This zone may be implanted in a substrate of opposite conductivity.
FR7414979A 1974-04-30 1974-04-30 Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity Granted FR2269788A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7414979A FR2269788A1 (en) 1974-04-30 1974-04-30 Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity
JP50052434A JPS50153558A (en) 1974-04-30 1975-04-30
DE19752519307 DE2519307A1 (en) 1974-04-30 1975-04-30 SOLID-WIDE CIRCUIT AND BISTABLE TOGGLE CIRCUIT PRODUCED WITH IT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7414979A FR2269788A1 (en) 1974-04-30 1974-04-30 Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity

Publications (2)

Publication Number Publication Date
FR2269788A1 true FR2269788A1 (en) 1975-11-28
FR2269788B1 FR2269788B1 (en) 1978-04-14

Family

ID=9138305

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7414979A Granted FR2269788A1 (en) 1974-04-30 1974-04-30 Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity

Country Status (3)

Country Link
JP (1) JPS50153558A (en)
DE (1) DE2519307A1 (en)
FR (1) FR2269788A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003193A1 (en) * 1978-01-13 1979-07-25 Thomson-Csf Static random access memory cell

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2373163A1 (en) * 1976-12-03 1978-06-30 Thomson Csf STRUCTURE FOR LOGIC CIRCUITS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0003193A1 (en) * 1978-01-13 1979-07-25 Thomson-Csf Static random access memory cell

Also Published As

Publication number Publication date
DE2519307A1 (en) 1975-11-13
FR2269788B1 (en) 1978-04-14
JPS50153558A (en) 1975-12-10

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Legal Events

Date Code Title Description
ST Notification of lapse