FR2269788B1 - - Google Patents
Info
- Publication number
- FR2269788B1 FR2269788B1 FR7414979A FR7414979A FR2269788B1 FR 2269788 B1 FR2269788 B1 FR 2269788B1 FR 7414979 A FR7414979 A FR 7414979A FR 7414979 A FR7414979 A FR 7414979A FR 2269788 B1 FR2269788 B1 FR 2269788B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7414979A FR2269788A1 (en) | 1974-04-30 | 1974-04-30 | Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity |
JP50052434A JPS50153558A (en) | 1974-04-30 | 1975-04-30 | |
DE19752519307 DE2519307A1 (en) | 1974-04-30 | 1975-04-30 | SOLID-WIDE CIRCUIT AND BISTABLE TOGGLE CIRCUIT PRODUCED WITH IT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7414979A FR2269788A1 (en) | 1974-04-30 | 1974-04-30 | Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2269788A1 FR2269788A1 (en) | 1975-11-28 |
FR2269788B1 true FR2269788B1 (en) | 1978-04-14 |
Family
ID=9138305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7414979A Granted FR2269788A1 (en) | 1974-04-30 | 1974-04-30 | Integrated semiconductor cct. for flip-flop - has two complementary transistors implanted in one zone of first conductivity |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS50153558A (en) |
DE (1) | DE2519307A1 (en) |
FR (1) | FR2269788A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2373163A1 (en) * | 1976-12-03 | 1978-06-30 | Thomson Csf | STRUCTURE FOR LOGIC CIRCUITS |
FR2414778A1 (en) * | 1978-01-13 | 1979-08-10 | Thomson Csf | STATIC MEMORY ELEMENT WITH RANDOM ACCESS |
-
1974
- 1974-04-30 FR FR7414979A patent/FR2269788A1/en active Granted
-
1975
- 1975-04-30 DE DE19752519307 patent/DE2519307A1/en active Pending
- 1975-04-30 JP JP50052434A patent/JPS50153558A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2269788A1 (en) | 1975-11-28 |
JPS50153558A (en) | 1975-12-10 |
DE2519307A1 (en) | 1975-11-13 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |