FR2445626A1 - Transistor pour circuit integre - Google Patents

Transistor pour circuit integre

Info

Publication number
FR2445626A1
FR2445626A1 FR7836828A FR7836828A FR2445626A1 FR 2445626 A1 FR2445626 A1 FR 2445626A1 FR 7836828 A FR7836828 A FR 7836828A FR 7836828 A FR7836828 A FR 7836828A FR 2445626 A1 FR2445626 A1 FR 2445626A1
Authority
FR
France
Prior art keywords
zone
conduction type
integrated circuit
power transistor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7836828A
Other languages
English (en)
Other versions
FR2445626B1 (fr
Inventor
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7836828A priority Critical patent/FR2445626A1/fr
Publication of FR2445626A1 publication Critical patent/FR2445626A1/fr
Application granted granted Critical
Publication of FR2445626B1 publication Critical patent/FR2445626B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors

Abstract

Transistor pour circuit intégré, réalisé dans un corps semi-conducteur composé d'une plaquette-substrat surmontée d'une couche épitaxiale. La plaquette-substrat est divisée en deux domaines de types de conductivité opposés, dont l'un, qui la traverse sur toute son épaisseur, constitue une région de conduction et de sortie adjacente à la région de collecteur du transistor. Application aux transistors de puissance pour circuits intégrés.
FR7836828A 1978-12-29 1978-12-29 Transistor pour circuit integre Granted FR2445626A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7836828A FR2445626A1 (fr) 1978-12-29 1978-12-29 Transistor pour circuit integre

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7836828A FR2445626A1 (fr) 1978-12-29 1978-12-29 Transistor pour circuit integre

Publications (2)

Publication Number Publication Date
FR2445626A1 true FR2445626A1 (fr) 1980-07-25
FR2445626B1 FR2445626B1 (fr) 1982-06-18

Family

ID=9216716

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7836828A Granted FR2445626A1 (fr) 1978-12-29 1978-12-29 Transistor pour circuit integre

Country Status (1)

Country Link
FR (1) FR2445626A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1597105A (fr) * 1968-05-06 1970-06-22
FR2290038A2 (fr) * 1974-11-01 1976-05-28 Gen Electric Perfectionnements a un procede de fabrication de grilles d'isolation dans des corps de materiaux semi-conducteurs et dispositifs semi-conducteurs obtenus par un tel procede
US3982269A (en) * 1974-11-22 1976-09-21 General Electric Company Semiconductor devices and method, including TGZM, of making same
FR2319973A1 (fr) * 1975-07-31 1977-02-25 Nat Semiconductor Corp Transistor de circuit integre monolithique a tres faible resistance de collecteur
US4021269A (en) * 1975-11-26 1977-05-03 General Electric Company Post diffusion after temperature gradient zone melting
FR2332619A1 (fr) * 1975-11-21 1977-06-17 Gen Electric Procede de migration d'une zone fondue a travers un corps semi-conducteur
EP0002087A1 (fr) * 1977-11-14 1979-05-30 R.T.C. LA RADIOTECHNIQUE-COMPELEC Société anonyme dite: Dispositif semiconducteur monolithique comprenant deux transistors complémentaires et son procédé de fabrication

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1597105A (fr) * 1968-05-06 1970-06-22
FR2290038A2 (fr) * 1974-11-01 1976-05-28 Gen Electric Perfectionnements a un procede de fabrication de grilles d'isolation dans des corps de materiaux semi-conducteurs et dispositifs semi-conducteurs obtenus par un tel procede
US3982269A (en) * 1974-11-22 1976-09-21 General Electric Company Semiconductor devices and method, including TGZM, of making same
FR2319973A1 (fr) * 1975-07-31 1977-02-25 Nat Semiconductor Corp Transistor de circuit integre monolithique a tres faible resistance de collecteur
FR2332619A1 (fr) * 1975-11-21 1977-06-17 Gen Electric Procede de migration d'une zone fondue a travers un corps semi-conducteur
US4021269A (en) * 1975-11-26 1977-05-03 General Electric Company Post diffusion after temperature gradient zone melting
FR2332801A1 (fr) * 1975-11-26 1977-06-24 Gen Electric Procede de fabrication de dispositifs semi-conducteurs
EP0002087A1 (fr) * 1977-11-14 1979-05-30 R.T.C. LA RADIOTECHNIQUE-COMPELEC Société anonyme dite: Dispositif semiconducteur monolithique comprenant deux transistors complémentaires et son procédé de fabrication

Also Published As

Publication number Publication date
FR2445626B1 (fr) 1982-06-18

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Legal Events

Date Code Title Description
ST Notification of lapse