FR2332619A1 - Procede de migration d'une zone fondue a travers un corps semi-conducteur - Google Patents

Procede de migration d'une zone fondue a travers un corps semi-conducteur

Info

Publication number
FR2332619A1
FR2332619A1 FR7634138A FR7634138A FR2332619A1 FR 2332619 A1 FR2332619 A1 FR 2332619A1 FR 7634138 A FR7634138 A FR 7634138A FR 7634138 A FR7634138 A FR 7634138A FR 2332619 A1 FR2332619 A1 FR 2332619A1
Authority
FR
France
Prior art keywords
semiconductor body
migration process
melted zone
melted
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7634138A
Other languages
English (en)
Other versions
FR2332619B1 (fr
Inventor
Mike Fushing Chang
Harvey Ellis Cline
Thomas Richard Anthony
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2332619A1 publication Critical patent/FR2332619A1/fr
Application granted granted Critical
Publication of FR2332619B1 publication Critical patent/FR2332619B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
FR7634138A 1975-11-21 1976-11-12 Procede de migration d'une zone fondue a travers un corps semi-conducteur Granted FR2332619A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63424775A 1975-11-21 1975-11-21

Publications (2)

Publication Number Publication Date
FR2332619A1 true FR2332619A1 (fr) 1977-06-17
FR2332619B1 FR2332619B1 (fr) 1980-09-26

Family

ID=24542996

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7634138A Granted FR2332619A1 (fr) 1975-11-21 1976-11-12 Procede de migration d'une zone fondue a travers un corps semi-conducteur

Country Status (6)

Country Link
JP (1) JPS5270755A (fr)
DE (1) DE2652667A1 (fr)
FR (1) FR2332619A1 (fr)
GB (1) GB1566454A (fr)
NL (1) NL7612934A (fr)
SE (1) SE418547B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0009097A1 (fr) * 1978-09-27 1980-04-02 International Business Machines Corporation Procédé de fabrication d'une structure d'isolation dans un corps semiconducteur
FR2445626A1 (fr) * 1978-12-29 1980-07-25 Radiotechnique Compelec Transistor pour circuit integre

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4713680A (en) * 1986-06-30 1987-12-15 Motorola, Inc. Series resistive network
US6720632B2 (en) * 2000-06-20 2004-04-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device having diffusion layer formed using dopant of large mass number

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2249445A1 (fr) * 1973-10-30 1975-05-23 Gen Electric

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2249445A1 (fr) * 1973-10-30 1975-05-23 Gen Electric

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0009097A1 (fr) * 1978-09-27 1980-04-02 International Business Machines Corporation Procédé de fabrication d'une structure d'isolation dans un corps semiconducteur
FR2445626A1 (fr) * 1978-12-29 1980-07-25 Radiotechnique Compelec Transistor pour circuit integre

Also Published As

Publication number Publication date
JPS5270755A (en) 1977-06-13
FR2332619B1 (fr) 1980-09-26
SE418547B (sv) 1981-06-09
NL7612934A (nl) 1977-05-24
SE7612994L (sv) 1977-05-22
DE2652667A1 (de) 1977-06-02
GB1566454A (en) 1980-04-30

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Legal Events

Date Code Title Description
ST Notification of lapse