SE418547B - Forfarande for migrering av en smelt zon genom en massiv kropp av halvledarmaterial - Google Patents
Forfarande for migrering av en smelt zon genom en massiv kropp av halvledarmaterialInfo
- Publication number
- SE418547B SE418547B SE7612994A SE7612994A SE418547B SE 418547 B SE418547 B SE 418547B SE 7612994 A SE7612994 A SE 7612994A SE 7612994 A SE7612994 A SE 7612994A SE 418547 B SE418547 B SE 418547B
- Authority
- SE
- Sweden
- Prior art keywords
- migration
- procedure
- semiconductor material
- massive body
- melted zone
- Prior art date
Links
- 239000000463 material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000013508 migration Methods 0.000 title 1
- 230000005012 migration Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63424775A | 1975-11-21 | 1975-11-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7612994L SE7612994L (sv) | 1977-05-22 |
SE418547B true SE418547B (sv) | 1981-06-09 |
Family
ID=24542996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7612994A SE418547B (sv) | 1975-11-21 | 1976-11-19 | Forfarande for migrering av en smelt zon genom en massiv kropp av halvledarmaterial |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5270755A (sv) |
DE (1) | DE2652667A1 (sv) |
FR (1) | FR2332619A1 (sv) |
GB (1) | GB1566454A (sv) |
NL (1) | NL7612934A (sv) |
SE (1) | SE418547B (sv) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4180416A (en) * | 1978-09-27 | 1979-12-25 | International Business Machines Corporation | Thermal migration-porous silicon technique for forming deep dielectric isolation |
FR2445626A1 (fr) * | 1978-12-29 | 1980-07-25 | Radiotechnique Compelec | Transistor pour circuit integre |
US4713680A (en) * | 1986-06-30 | 1987-12-15 | Motorola, Inc. | Series resistive network |
US6720632B2 (en) * | 2000-06-20 | 2004-04-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having diffusion layer formed using dopant of large mass number |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2450809A1 (de) * | 1973-10-30 | 1975-05-07 | Gen Electric | Tiefeingebettete schichten fuer halbleiter-einrichtungen |
-
1976
- 1976-11-12 FR FR7634138A patent/FR2332619A1/fr active Granted
- 1976-11-19 NL NL7612934A patent/NL7612934A/xx not_active Application Discontinuation
- 1976-11-19 SE SE7612994A patent/SE418547B/sv unknown
- 1976-11-19 GB GB48437/76A patent/GB1566454A/en not_active Expired
- 1976-11-19 DE DE19762652667 patent/DE2652667A1/de not_active Withdrawn
- 1976-11-22 JP JP51139621A patent/JPS5270755A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB1566454A (en) | 1980-04-30 |
DE2652667A1 (de) | 1977-06-02 |
JPS5270755A (en) | 1977-06-13 |
FR2332619B1 (sv) | 1980-09-26 |
FR2332619A1 (fr) | 1977-06-17 |
NL7612934A (nl) | 1977-05-24 |
SE7612994L (sv) | 1977-05-22 |
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