SE7614706L - Forfarande for migrering av en smelt zon genom en massiv kropp av halvledarmaterial - Google Patents

Forfarande for migrering av en smelt zon genom en massiv kropp av halvledarmaterial

Info

Publication number
SE7614706L
SE7614706L SE7614706A SE7614706A SE7614706L SE 7614706 L SE7614706 L SE 7614706L SE 7614706 A SE7614706 A SE 7614706A SE 7614706 A SE7614706 A SE 7614706A SE 7614706 L SE7614706 L SE 7614706L
Authority
SE
Sweden
Prior art keywords
migration
procedure
massive body
melted zone
salmon
Prior art date
Application number
SE7614706A
Other languages
English (en)
Inventor
M F Chang
T R Anthony
H E Cline
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE7614706L publication Critical patent/SE7614706L/sv

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SE7614706A 1975-12-31 1976-12-29 Forfarande for migrering av en smelt zon genom en massiv kropp av halvledarmaterial SE7614706L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/645,671 US3998661A (en) 1975-12-31 1975-12-31 Uniform migration of an annular shaped molten zone through a solid body

Publications (1)

Publication Number Publication Date
SE7614706L true SE7614706L (sv) 1977-07-02

Family

ID=24589981

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7614706A SE7614706L (sv) 1975-12-31 1976-12-29 Forfarande for migrering av en smelt zon genom en massiv kropp av halvledarmaterial

Country Status (7)

Country Link
US (1) US3998661A (sv)
JP (1) JPS5283165A (sv)
DE (1) DE2659320A1 (sv)
FR (1) FR2337422A1 (sv)
GB (1) GB1567787A (sv)
NL (1) NL7614547A (sv)
SE (1) SE7614706L (sv)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4135027A (en) * 1976-08-30 1979-01-16 General Electric Company Semiconductor element embodying an optical coating to enhance thermal gradient zone melting processing thereof
US4081293A (en) * 1976-10-18 1978-03-28 General Electric Company Uniform thermomigration utilizing sample movement
US4159213A (en) * 1978-09-13 1979-06-26 General Electric Company Straight, uniform thermalmigration of fine lines
US4180416A (en) * 1978-09-27 1979-12-25 International Business Machines Corporation Thermal migration-porous silicon technique for forming deep dielectric isolation
US4233934A (en) * 1978-12-07 1980-11-18 General Electric Company Guard ring for TGZM processing
US4190467A (en) * 1978-12-15 1980-02-26 Western Electric Co., Inc. Semiconductor device production
US4466173A (en) * 1981-11-23 1984-08-21 General Electric Company Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
US5071677A (en) * 1990-05-24 1991-12-10 Houston Advanced Research Center Halogen-assisted chemical vapor deposition of diamond
US5316795A (en) * 1990-05-24 1994-05-31 Houston Advanced Research Center Halogen-assisted chemical vapor deposition of diamond

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US3898106A (en) * 1973-10-30 1975-08-05 Gen Electric High velocity thermomigration method of making deep diodes
US3904442A (en) * 1973-10-30 1975-09-09 Gen Electric Method of making isolation grids in bodies of semiconductor material
US3897277A (en) * 1973-10-30 1975-07-29 Gen Electric High aspect ratio P-N junctions by the thermal gradient zone melting technique
US3902925A (en) * 1973-10-30 1975-09-02 Gen Electric Deep diode device and method
US3910801A (en) * 1973-10-30 1975-10-07 Gen Electric High velocity thermal migration method of making deep diodes
US3899361A (en) * 1973-10-30 1975-08-12 Gen Electric Stabilized droplet method of making deep diodes having uniform electrical properties
US3901736A (en) * 1973-10-30 1975-08-26 Gen Electric Method of making deep diode devices
US3899362A (en) * 1973-10-30 1975-08-12 Gen Electric Thermomigration of metal-rich liquid wires through semiconductor materials
US3936319A (en) * 1973-10-30 1976-02-03 General Electric Company Solar cell
US3956023A (en) * 1973-10-30 1976-05-11 General Electric Company Process for making a deep power diode by thermal migration of dopant
US4006040A (en) * 1975-12-31 1977-02-01 General Electric Company Semiconductor device manufacture

Also Published As

Publication number Publication date
DE2659320A1 (de) 1977-07-14
JPS5283165A (en) 1977-07-11
FR2337422A1 (fr) 1977-07-29
US3998661A (en) 1976-12-21
GB1567787A (en) 1980-05-21
NL7614547A (nl) 1977-07-04

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