FR2319197A1 - Circuit integre en logique a injection - Google Patents
Circuit integre en logique a injectionInfo
- Publication number
- FR2319197A1 FR2319197A1 FR7621825A FR7621825A FR2319197A1 FR 2319197 A1 FR2319197 A1 FR 2319197A1 FR 7621825 A FR7621825 A FR 7621825A FR 7621825 A FR7621825 A FR 7621825A FR 2319197 A1 FR2319197 A1 FR 2319197A1
- Authority
- FR
- France
- Prior art keywords
- zone
- collector
- thicker
- thinner
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19752532608 DE2532608C2 (de) | 1975-07-22 | 1975-07-22 | Planardiffusionsverfahren zum Herstellen einer monolithisch integrierten Schaltung |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2319197A1 true FR2319197A1 (fr) | 1977-02-18 |
FR2319197B1 FR2319197B1 (fr) | 1982-10-22 |
Family
ID=5952083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7621825A Granted FR2319197A1 (fr) | 1975-07-22 | 1976-07-16 | Circuit integre en logique a injection |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE2532608C2 (fr) |
FR (1) | FR2319197A1 (fr) |
IT (1) | IT1068568B (fr) |
NL (1) | NL7607540A (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2383521A1 (fr) * | 1977-03-12 | 1978-10-06 | Itt | Methode pour la fabrication de semi-conducteurs a logique integree a injection |
FR2386902A1 (fr) * | 1977-04-05 | 1978-11-03 | Licentia Gmbh | Procede de production d'au moins un circuit analogique integre avec un circuit i2l au moins |
EP0000114A1 (fr) * | 1977-06-16 | 1979-01-10 | International Business Machines Corporation | Procédé pour fabriquer un circuit logique intégré comportant des transistors bipolaires et circuit intégré fabriqué à l'aide de ce procédé. |
EP0008043A1 (fr) * | 1978-08-11 | 1980-02-20 | Siemens Aktiengesellschaft | Circuit semiconducteur bipolaire intégré |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3137813A1 (de) * | 1981-09-23 | 1983-03-31 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer halbleiteranordnung |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1241809A (en) * | 1967-11-06 | 1971-08-04 | Hitachi Ltd | A method for manufacturing a semiconductor device |
FR2290037A1 (fr) * | 1974-10-29 | 1976-05-28 | Fairchild Camera Instr Co | Procede combine pour fabriquer des transistors bipolaires verticaux isoles par oxyde et des transistors bipolaires lateraux complementaires isoles par oxyde et structures ainsi fabriquees |
FR2290758A1 (fr) * | 1974-11-08 | 1976-06-04 | Itt | Methode de diffusion planaire pour circuit integre en logique a injection |
FR2301925A1 (fr) * | 1975-02-19 | 1976-09-17 | Siemens Ag | Transistor planar inverse |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1388169A (fr) * | 1963-01-28 | 1965-02-05 | Rca Corp | Dispositifs semiconducteurs |
US3817794A (en) * | 1971-08-02 | 1974-06-18 | Bell Telephone Labor Inc | Method for making high-gain transistors |
-
1975
- 1975-07-22 DE DE19752532608 patent/DE2532608C2/de not_active Expired
-
1976
- 1976-07-08 NL NL7607540A patent/NL7607540A/xx not_active Application Discontinuation
- 1976-07-13 IT IT2524276A patent/IT1068568B/it active
- 1976-07-16 FR FR7621825A patent/FR2319197A1/fr active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1241809A (en) * | 1967-11-06 | 1971-08-04 | Hitachi Ltd | A method for manufacturing a semiconductor device |
FR2290037A1 (fr) * | 1974-10-29 | 1976-05-28 | Fairchild Camera Instr Co | Procede combine pour fabriquer des transistors bipolaires verticaux isoles par oxyde et des transistors bipolaires lateraux complementaires isoles par oxyde et structures ainsi fabriquees |
FR2290758A1 (fr) * | 1974-11-08 | 1976-06-04 | Itt | Methode de diffusion planaire pour circuit integre en logique a injection |
FR2301925A1 (fr) * | 1975-02-19 | 1976-09-17 | Siemens Ag | Transistor planar inverse |
Non-Patent Citations (1)
Title |
---|
EXBK/71 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2383521A1 (fr) * | 1977-03-12 | 1978-10-06 | Itt | Methode pour la fabrication de semi-conducteurs a logique integree a injection |
FR2386902A1 (fr) * | 1977-04-05 | 1978-11-03 | Licentia Gmbh | Procede de production d'au moins un circuit analogique integre avec un circuit i2l au moins |
EP0000114A1 (fr) * | 1977-06-16 | 1979-01-10 | International Business Machines Corporation | Procédé pour fabriquer un circuit logique intégré comportant des transistors bipolaires et circuit intégré fabriqué à l'aide de ce procédé. |
EP0008043A1 (fr) * | 1978-08-11 | 1980-02-20 | Siemens Aktiengesellschaft | Circuit semiconducteur bipolaire intégré |
Also Published As
Publication number | Publication date |
---|---|
DE2532608A1 (de) | 1977-01-27 |
DE2532608C2 (de) | 1982-09-02 |
FR2319197B1 (fr) | 1982-10-22 |
NL7607540A (nl) | 1977-01-25 |
IT1068568B (it) | 1985-03-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |