GB1405285A - Semiconductor information storage devices - Google Patents

Semiconductor information storage devices

Info

Publication number
GB1405285A
GB1405285A GB4016872A GB4016872A GB1405285A GB 1405285 A GB1405285 A GB 1405285A GB 4016872 A GB4016872 A GB 4016872A GB 4016872 A GB4016872 A GB 4016872A GB 1405285 A GB1405285 A GB 1405285A
Authority
GB
United Kingdom
Prior art keywords
collector
layer
emitter
base
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4016872A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB4016872A priority Critical patent/GB1405285A/en
Publication of GB1405285A publication Critical patent/GB1405285A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

1405285 Semi-conductor devices FERRANTI Ltd 28 Aug 1973 [30 Aug 1972] 40168/72 Heading H4K [Also in Division H3] A pair of cross-coupled multi-emitter transistors 31, 32 are formed by collector-diffusionisolation techniques. Each collector is formed by a N+ buried layer and isolation zone 13, 20 (Fig. 1, which is section I-I of Fig. 5), and emitter zones 161, 16<SP>11</SP>, 16<SP>111</SP> are formed in the epitaxial P+ layer 11 forming the base. A passivating silicon dioxide layer (not shown) on the surface has contacts made through it to the emitters, base and collector, and is overlaid with aluminium conductors. One of these conductors 18 short-circuits one of the emitter zones 16<SP>111</SP> to the base zone 15. The emitter zone 16<SP>1</SP> carries two electrodes 17<SP>1</SP>. The surface of the p-epitaxial layer is made p + (not shown) The collector resistors R1, R2 are provided by a common doped region 60 in the epitaxial layer, the common contact 64 defining the two resistor portions.
GB4016872A 1972-08-30 1972-08-30 Semiconductor information storage devices Expired GB1405285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4016872A GB1405285A (en) 1972-08-30 1972-08-30 Semiconductor information storage devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4016872A GB1405285A (en) 1972-08-30 1972-08-30 Semiconductor information storage devices

Publications (1)

Publication Number Publication Date
GB1405285A true GB1405285A (en) 1975-09-10

Family

ID=10413535

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4016872A Expired GB1405285A (en) 1972-08-30 1972-08-30 Semiconductor information storage devices

Country Status (1)

Country Link
GB (1) GB1405285A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4223335A (en) * 1975-08-02 1980-09-16 Ferranti Limited Semiconductor device body having identical isolated composite resistor regions
GB2117592A (en) * 1982-03-29 1983-10-12 Fairchild Camera Instr Co Word line cell discharge current bypass
FR2579816A1 (en) * 1985-03-29 1986-10-03 Radiotechnique Compelec ACTIVE LOAD SELECTIVE ACCESS MEMORY

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4223335A (en) * 1975-08-02 1980-09-16 Ferranti Limited Semiconductor device body having identical isolated composite resistor regions
GB2117592A (en) * 1982-03-29 1983-10-12 Fairchild Camera Instr Co Word line cell discharge current bypass
FR2579816A1 (en) * 1985-03-29 1986-10-03 Radiotechnique Compelec ACTIVE LOAD SELECTIVE ACCESS MEMORY
EP0196715A1 (en) * 1985-03-29 1986-10-08 Philips Composants Active load random access memory
AU584404B2 (en) * 1985-03-29 1989-05-25 Philips Electronics N.V. Selectively accessible memory having an active load

Similar Documents

Publication Publication Date Title
GB1330911A (en) Integral thyristor-rectifier diode device
ES393035A1 (en) Semiconductor devices having local oxide isolation
GB1148417A (en) Integrated circuit structures including controlled rectifiers or their structural equivalents and method of making the same
US3631311A (en) Semiconductor circuit arrangement with integrated base leakage resistance
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1372607A (en) Semiconductor devices
GB1311446A (en) Semiconductor devices
GB1405285A (en) Semiconductor information storage devices
ES404807A1 (en) Planar epitaxial process for making linear integrated circuits
GB1279917A (en) Improvements in or relating to integrated circuits which have a multiple emitter transistor
GB1505103A (en) Semiconductor device having complementary transistors and method of manufacturing same
GB1334745A (en) Semiconductor devices
GB1246864A (en) Transistor
GB1368190A (en) Monolithic integrated circuit
GB1450749A (en) Semiconductor darlington circuit
GB1281769A (en) Method for making transistor including gain determining step
GB1382730A (en) Manufacture of semiconductor diodes
GB1482298A (en) Monolithically integrated circuit
GB1021147A (en) Divided base four-layer semiconductor device
GB1496306A (en) Semiconductor integrated circuit including an epitaxial base type vertical transistor
GB1531811A (en) Complementary transistors and their manufacture
FR2363897A1 (en) Darlington amplifier with heavily doped buried regions - forming a diode with high breakdown voltage
GB1325081A (en) Transistors
FR2319197A1 (en) Monolithically integrated circuit with bipolar analog part - has thinner zone below and thicker zone adjacent to collector zone
GB1362852A (en) High frequency planar transistor employing highly resistive guard ring

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees