FR2301925A1 - Transistor planar inverse - Google Patents

Transistor planar inverse

Info

Publication number
FR2301925A1
FR2301925A1 FR7603630A FR7603630A FR2301925A1 FR 2301925 A1 FR2301925 A1 FR 2301925A1 FR 7603630 A FR7603630 A FR 7603630A FR 7603630 A FR7603630 A FR 7603630A FR 2301925 A1 FR2301925 A1 FR 2301925A1
Authority
FR
France
Prior art keywords
planar transistor
reverse planar
reverse
transistor
planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7603630A
Other languages
English (en)
Other versions
FR2301925B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2301925A1 publication Critical patent/FR2301925A1/fr
Application granted granted Critical
Publication of FR2301925B1 publication Critical patent/FR2301925B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7327—Inverse vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7603630A 1975-02-19 1976-02-10 Transistor planar inverse Granted FR2301925A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2507038A DE2507038C3 (de) 1975-02-19 1975-02-19 Inverser Planartransistor und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
FR2301925A1 true FR2301925A1 (fr) 1976-09-17
FR2301925B1 FR2301925B1 (fr) 1982-03-19

Family

ID=5939232

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7603630A Granted FR2301925A1 (fr) 1975-02-19 1976-02-10 Transistor planar inverse

Country Status (5)

Country Link
JP (1) JPS51107779A (fr)
DE (1) DE2507038C3 (fr)
FR (1) FR2301925A1 (fr)
GB (1) GB1494149A (fr)
IT (1) IT1055197B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2319197A1 (fr) * 1975-07-22 1977-02-18 Itt Circuit integre en logique a injection
FR2334198A1 (fr) * 1975-12-03 1977-07-01 Siemens Ag Procede d'obtention d'une amplification en courant inverse localement elevee dans un transistor planar

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5385182A (en) * 1977-01-05 1978-07-27 Hitachi Ltd Iil type semiconductor device
JPS55111159A (en) * 1979-02-20 1980-08-27 Fuji Electric Co Ltd Semiconductor integrated circuit
JPS564275A (en) * 1979-06-25 1981-01-17 Fujitsu Ltd Semiconductor device
JPS6031107B2 (ja) * 1981-01-09 1985-07-20 株式会社日立製作所 半導体集積回路装置
JPS59158554A (ja) * 1983-02-27 1984-09-08 Rohm Co Ltd トランジスタ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926752A (fr) * 1972-07-06 1974-03-09
JPS5720711B2 (fr) * 1974-07-09 1982-04-30
JPS5837699B2 (ja) * 1974-12-16 1983-08-18 三菱電機株式会社 ハンドウタイキオクソウチ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2319197A1 (fr) * 1975-07-22 1977-02-18 Itt Circuit integre en logique a injection
FR2334198A1 (fr) * 1975-12-03 1977-07-01 Siemens Ag Procede d'obtention d'une amplification en courant inverse localement elevee dans un transistor planar

Also Published As

Publication number Publication date
GB1494149A (en) 1977-12-07
DE2507038B2 (de) 1979-05-23
JPS51107779A (fr) 1976-09-24
DE2507038A1 (de) 1976-09-02
FR2301925B1 (fr) 1982-03-19
DE2507038C3 (de) 1980-01-24
IT1055197B (it) 1981-12-21

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Legal Events

Date Code Title Description
ST Notification of lapse