FR2301924A1 - Transistor planar inverse - Google Patents

Transistor planar inverse

Info

Publication number
FR2301924A1
FR2301924A1 FR7603632A FR7603632A FR2301924A1 FR 2301924 A1 FR2301924 A1 FR 2301924A1 FR 7603632 A FR7603632 A FR 7603632A FR 7603632 A FR7603632 A FR 7603632A FR 2301924 A1 FR2301924 A1 FR 2301924A1
Authority
FR
France
Prior art keywords
planar transistor
reverse planar
reverse
transistor
planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7603632A
Other languages
English (en)
Other versions
FR2301924B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2301924A1 publication Critical patent/FR2301924A1/fr
Application granted granted Critical
Publication of FR2301924B1 publication Critical patent/FR2301924B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7327—Inverse vertical transistors
FR7603632A 1975-02-19 1976-02-10 Transistor planar inverse Granted FR2301924A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752507148 DE2507148A1 (de) 1975-02-19 1975-02-19 Inverser planartransistor

Publications (2)

Publication Number Publication Date
FR2301924A1 true FR2301924A1 (fr) 1976-09-17
FR2301924B1 FR2301924B1 (fr) 1982-04-23

Family

ID=5939287

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7603632A Granted FR2301924A1 (fr) 1975-02-19 1976-02-10 Transistor planar inverse

Country Status (5)

Country Link
JP (1) JPS51107778A (fr)
DE (1) DE2507148A1 (fr)
FR (1) FR2301924A1 (fr)
GB (1) GB1495864A (fr)
IT (1) IT1055195B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2180517A1 (fr) * 2008-10-24 2010-04-28 Epcos Ag Transistor bipolaire pnp avec un collecteur latéral et procédé de fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5276887A (en) * 1975-12-22 1977-06-28 Fujitsu Ltd Semiconductor device
JPS5267275A (en) * 1976-10-08 1977-06-03 Sony Corp Semiconductor unit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659675A (en) * 1969-06-30 1972-05-02 Transportation Specialists Inc Lubrication system and reservoir therefor
JPS4911659U (fr) * 1972-05-09 1974-01-31

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2180517A1 (fr) * 2008-10-24 2010-04-28 Epcos Ag Transistor bipolaire pnp avec un collecteur latéral et procédé de fabrication
WO2010046449A1 (fr) * 2008-10-24 2010-04-29 Epcos Ag Transistor bipolaire avec base de type n et procédé de production
US8410572B2 (en) 2008-10-24 2013-04-02 Epcos Ag Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production

Also Published As

Publication number Publication date
JPS51107778A (fr) 1976-09-24
GB1495864A (en) 1977-12-21
FR2301924B1 (fr) 1982-04-23
DE2507148A1 (de) 1976-09-02
IT1055195B (it) 1981-12-21

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Legal Events

Date Code Title Description
ST Notification of lapse