JPS5276887A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5276887A
JPS5276887A JP50153060A JP15306075A JPS5276887A JP S5276887 A JPS5276887 A JP S5276887A JP 50153060 A JP50153060 A JP 50153060A JP 15306075 A JP15306075 A JP 15306075A JP S5276887 A JPS5276887 A JP S5276887A
Authority
JP
Japan
Prior art keywords
consisted
npn transistor
semiconductor device
contact
hyper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50153060A
Other languages
Japanese (ja)
Inventor
Tsuneo Funatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50153060A priority Critical patent/JPS5276887A/en
Publication of JPS5276887A publication Critical patent/JPS5276887A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To gain the hyper-fine pattern I<2>L by next method, that is, on the semiconductive device which consisted of horizontal PNP and vertical NPN transistor, the collector of NPN transistor is consisted of P type base region, thin insulating membrane contact with it and MIS junction composed of metal collector electrode further contact with it.
JP50153060A 1975-12-22 1975-12-22 Semiconductor device Pending JPS5276887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50153060A JPS5276887A (en) 1975-12-22 1975-12-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50153060A JPS5276887A (en) 1975-12-22 1975-12-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5276887A true JPS5276887A (en) 1977-06-28

Family

ID=15554094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50153060A Pending JPS5276887A (en) 1975-12-22 1975-12-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5276887A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991364A (en) * 1972-12-20 1974-08-31
JPS50134386A (en) * 1974-03-26 1975-10-24
JPS51107778A (en) * 1975-02-19 1976-09-24 Siemens Ag
JPS51110958A (en) * 1975-03-05 1976-09-30 Ibm
JPS51113470A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991364A (en) * 1972-12-20 1974-08-31
JPS50134386A (en) * 1974-03-26 1975-10-24
JPS51107778A (en) * 1975-02-19 1976-09-24 Siemens Ag
JPS51110958A (en) * 1975-03-05 1976-09-30 Ibm
JPS51113470A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device

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