FR2386902A1 - Procede de production d'au moins un circuit analogique integre avec un circuit i2l au moins - Google Patents

Procede de production d'au moins un circuit analogique integre avec un circuit i2l au moins

Info

Publication number
FR2386902A1
FR2386902A1 FR7810113A FR7810113A FR2386902A1 FR 2386902 A1 FR2386902 A1 FR 2386902A1 FR 7810113 A FR7810113 A FR 7810113A FR 7810113 A FR7810113 A FR 7810113A FR 2386902 A1 FR2386902 A1 FR 2386902A1
Authority
FR
France
Prior art keywords
circuit
production
integrated analogue
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7810113A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of FR2386902A1 publication Critical patent/FR2386902A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/087—I2L integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

Procédé de production de circuits I**2L et de circuits analogiques bipolaires intégrés mixtes. Une phase supplémentaire est prévue pour la production d'une zone N**+ plate de transistors linéaires du circuit analogique à rigidité diélectrique particulièrement élevée (UCBO = 60 - 70V).
FR7810113A 1977-04-05 1978-04-05 Procede de production d'au moins un circuit analogique integre avec un circuit i2l au moins Withdrawn FR2386902A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772715158 DE2715158A1 (de) 1977-04-05 1977-04-05 Verfahren zur herstellung mindestens einer mit mindestens einer i hoch 2 l-schaltung integrierten analogschaltung

Publications (1)

Publication Number Publication Date
FR2386902A1 true FR2386902A1 (fr) 1978-11-03

Family

ID=6005695

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7810113A Withdrawn FR2386902A1 (fr) 1977-04-05 1978-04-05 Procede de production d'au moins un circuit analogique integre avec un circuit i2l au moins

Country Status (5)

Country Link
US (1) US4197147A (fr)
DE (1) DE2715158A1 (fr)
FR (1) FR2386902A1 (fr)
GB (1) GB1603184A (fr)
IT (1) IT1093469B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3020609C2 (de) * 1979-05-31 1985-11-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zum Herstellen einer integrierten Schaltung mit wenigstens einem I↑2↑L-Element
JPS56115525A (en) * 1980-02-18 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
EP0054303B1 (fr) * 1980-12-17 1986-06-11 Matsushita Electric Industrial Co., Ltd. Semiconducteur à circuit intégré
US4546539A (en) * 1982-12-08 1985-10-15 Harris Corporation I2 L Structure and fabrication process compatible with high voltage bipolar transistors
JPS60117765A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1948921A1 (de) * 1968-10-02 1970-04-09 Nat Semiconductor Corp Halbleiterbauelement,insbesondere monolithischer integrierter Schaltkreis und Verfahren zu seiner Herstellung
FR2319197A1 (fr) * 1975-07-22 1977-02-18 Itt Circuit integre en logique a injection

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770519A (en) * 1970-08-05 1973-11-06 Ibm Isolation diffusion method for making reduced beta transistor or diodes
DE2137976C3 (de) * 1971-07-29 1978-08-31 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithischer Speicher und Verfahren zur Herstellung
JPS5548704B2 (fr) * 1973-06-01 1980-12-08
DE2453134C3 (de) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren
US4087900A (en) * 1976-10-18 1978-05-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1948921A1 (de) * 1968-10-02 1970-04-09 Nat Semiconductor Corp Halbleiterbauelement,insbesondere monolithischer integrierter Schaltkreis und Verfahren zu seiner Herstellung
FR2319197A1 (fr) * 1975-07-22 1977-02-18 Itt Circuit integre en logique a injection

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/77 *

Also Published As

Publication number Publication date
DE2715158A1 (de) 1978-10-19
US4197147A (en) 1980-04-08
GB1603184A (en) 1981-11-18
IT7821965A0 (it) 1978-04-04
IT1093469B (it) 1985-07-19

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Legal Events

Date Code Title Description
RE Withdrawal of published application