IT1093469B - Procedimento per la produzione di almeno in circuito analogico intergrato con almeno un circuito i alla seconda/l - Google Patents

Procedimento per la produzione di almeno in circuito analogico intergrato con almeno un circuito i alla seconda/l

Info

Publication number
IT1093469B
IT1093469B IT7821965A IT2196578A IT1093469B IT 1093469 B IT1093469 B IT 1093469B IT 7821965 A IT7821965 A IT 7821965A IT 2196578 A IT2196578 A IT 2196578A IT 1093469 B IT1093469 B IT 1093469B
Authority
IT
Italy
Prior art keywords
circuit
procedure
per
production
integrated
Prior art date
Application number
IT7821965A
Other languages
English (en)
Other versions
IT7821965A0 (it
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of IT7821965A0 publication Critical patent/IT7821965A0/it
Application granted granted Critical
Publication of IT1093469B publication Critical patent/IT1093469B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133Emitter regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0112Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211Design considerations for internal polarisation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/087I2L integrated injection logic
IT7821965A 1977-04-05 1978-04-04 Procedimento per la produzione di almeno in circuito analogico intergrato con almeno un circuito i alla seconda/l IT1093469B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772715158 DE2715158A1 (de) 1977-04-05 1977-04-05 Verfahren zur herstellung mindestens einer mit mindestens einer i hoch 2 l-schaltung integrierten analogschaltung

Publications (2)

Publication Number Publication Date
IT7821965A0 IT7821965A0 (it) 1978-04-04
IT1093469B true IT1093469B (it) 1985-07-19

Family

ID=6005695

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7821965A IT1093469B (it) 1977-04-05 1978-04-04 Procedimento per la produzione di almeno in circuito analogico intergrato con almeno un circuito i alla seconda/l

Country Status (5)

Country Link
US (1) US4197147A (it)
DE (1) DE2715158A1 (it)
FR (1) FR2386902A1 (it)
GB (1) GB1603184A (it)
IT (1) IT1093469B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3020609C2 (de) * 1979-05-31 1985-11-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zum Herstellen einer integrierten Schaltung mit wenigstens einem I↑2↑L-Element
JPS56115525A (en) * 1980-02-18 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
DE3174824D1 (en) * 1980-12-17 1986-07-17 Matsushita Electric Industrial Co Ltd Semiconductor integrated circuit
US4546539A (en) * 1982-12-08 1985-10-15 Harris Corporation I2 L Structure and fabrication process compatible with high voltage bipolar transistors
JPS60117765A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3566218A (en) * 1968-10-02 1971-02-23 Nat Semiconductor Corp The Multiple base width integrated circuit
US3770519A (en) * 1970-08-05 1973-11-06 Ibm Isolation diffusion method for making reduced beta transistor or diodes
DE2137976C3 (de) * 1971-07-29 1978-08-31 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithischer Speicher und Verfahren zur Herstellung
JPS5548704B2 (it) * 1973-06-01 1980-12-08
DE2453134C3 (de) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren
DE2532608C2 (de) * 1975-07-22 1982-09-02 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren zum Herstellen einer monolithisch integrierten Schaltung
US4087900A (en) * 1976-10-18 1978-05-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions

Also Published As

Publication number Publication date
FR2386902A1 (fr) 1978-11-03
GB1603184A (en) 1981-11-18
DE2715158A1 (de) 1978-10-19
US4197147A (en) 1980-04-08
IT7821965A0 (it) 1978-04-04

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