FR2332801A1 - Procede de fabrication de dispositifs semi-conducteurs - Google Patents
Procede de fabrication de dispositifs semi-conducteursInfo
- Publication number
- FR2332801A1 FR2332801A1 FR7635065A FR7635065A FR2332801A1 FR 2332801 A1 FR2332801 A1 FR 2332801A1 FR 7635065 A FR7635065 A FR 7635065A FR 7635065 A FR7635065 A FR 7635065A FR 2332801 A1 FR2332801 A1 FR 2332801A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor devices
- manufacturing semiconductor
- manufacturing
- devices
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/635,368 US4021269A (en) | 1975-11-26 | 1975-11-26 | Post diffusion after temperature gradient zone melting |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2332801A1 true FR2332801A1 (fr) | 1977-06-24 |
FR2332801B1 FR2332801B1 (fr) | 1982-02-12 |
Family
ID=24547513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7635065A Granted FR2332801A1 (fr) | 1975-11-26 | 1976-11-22 | Procede de fabrication de dispositifs semi-conducteurs |
Country Status (6)
Country | Link |
---|---|
US (1) | US4021269A (fr) |
JP (1) | JPS5275174A (fr) |
DE (1) | DE2653311A1 (fr) |
FR (1) | FR2332801A1 (fr) |
GB (1) | GB1557299A (fr) |
SE (1) | SE409528B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2445626A1 (fr) * | 1978-12-29 | 1980-07-25 | Radiotechnique Compelec | Transistor pour circuit integre |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4066485A (en) * | 1977-01-21 | 1978-01-03 | Rca Corporation | Method of fabricating a semiconductor device |
FR2408914A1 (fr) * | 1977-11-14 | 1979-06-08 | Radiotechnique Compelec | Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication |
US4160679A (en) * | 1978-09-13 | 1979-07-10 | General Electric Company | Migration of fine liquid wires by thermal gradient zone melting through doped surfaces |
US4190467A (en) * | 1978-12-15 | 1980-02-26 | Western Electric Co., Inc. | Semiconductor device production |
NL8006668A (nl) * | 1980-12-09 | 1982-07-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
US7791170B2 (en) * | 2006-07-10 | 2010-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a deep junction for electrical crosstalk reduction of an image sensor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2998334A (en) * | 1958-03-07 | 1961-08-29 | Transitron Electronic Corp | Method of making transistors |
FR2249439A1 (fr) * | 1973-10-30 | 1975-05-23 | Gen Electric | |
FR2269201A1 (fr) * | 1974-04-29 | 1975-11-21 | Gen Electric |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2813048A (en) * | 1954-06-24 | 1957-11-12 | Bell Telephone Labor Inc | Temperature gradient zone-melting |
US2770761A (en) * | 1954-12-16 | 1956-11-13 | Bell Telephone Labor Inc | Semiconductor translators containing enclosed active junctions |
US3936319A (en) * | 1973-10-30 | 1976-02-03 | General Electric Company | Solar cell |
US3972741A (en) * | 1974-04-29 | 1976-08-03 | General Electric Company | Multiple p-n junction formation with an alloy droplet |
-
1975
- 1975-11-26 US US05/635,368 patent/US4021269A/en not_active Expired - Lifetime
-
1976
- 1976-11-22 FR FR7635065A patent/FR2332801A1/fr active Granted
- 1976-11-24 DE DE19762653311 patent/DE2653311A1/de not_active Ceased
- 1976-11-24 GB GB48948/76A patent/GB1557299A/en not_active Expired
- 1976-11-25 SE SE7613233A patent/SE409528B/xx unknown
- 1976-11-26 JP JP51141339A patent/JPS5275174A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2998334A (en) * | 1958-03-07 | 1961-08-29 | Transitron Electronic Corp | Method of making transistors |
FR2249439A1 (fr) * | 1973-10-30 | 1975-05-23 | Gen Electric | |
FR2269201A1 (fr) * | 1974-04-29 | 1975-11-21 | Gen Electric |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2445626A1 (fr) * | 1978-12-29 | 1980-07-25 | Radiotechnique Compelec | Transistor pour circuit integre |
Also Published As
Publication number | Publication date |
---|---|
JPS5275174A (en) | 1977-06-23 |
SE7613233L (sv) | 1977-05-27 |
GB1557299A (en) | 1979-12-05 |
US4021269A (en) | 1977-05-03 |
DE2653311A1 (de) | 1977-06-02 |
FR2332801B1 (fr) | 1982-02-12 |
SE409528B (sv) | 1979-08-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |