FR2326038A1 - Procede de fabrication de circuits integres auto-alignes et dispositifs en resultant - Google Patents
Procede de fabrication de circuits integres auto-alignes et dispositifs en resultantInfo
- Publication number
- FR2326038A1 FR2326038A1 FR7626312A FR7626312A FR2326038A1 FR 2326038 A1 FR2326038 A1 FR 2326038A1 FR 7626312 A FR7626312 A FR 7626312A FR 7626312 A FR7626312 A FR 7626312A FR 2326038 A1 FR2326038 A1 FR 2326038A1
- Authority
- FR
- France
- Prior art keywords
- integrated circuits
- resulting devices
- manufacturing self
- aligned integrated
- aligned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/617,462 US4021789A (en) | 1975-09-29 | 1975-09-29 | Self-aligned integrated circuits |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2326038A1 true FR2326038A1 (fr) | 1977-04-22 |
FR2326038B1 FR2326038B1 (fr) | 1979-07-06 |
Family
ID=24473746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7626312A Granted FR2326038A1 (fr) | 1975-09-29 | 1976-08-25 | Procede de fabrication de circuits integres auto-alignes et dispositifs en resultant |
Country Status (8)
Country | Link |
---|---|
US (1) | US4021789A (fr) |
JP (1) | JPS5242382A (fr) |
CA (1) | CA1043467A (fr) |
DE (1) | DE2642303A1 (fr) |
FR (1) | FR2326038A1 (fr) |
GB (1) | GB1496119A (fr) |
IT (1) | IT1070004B (fr) |
NL (1) | NL7609377A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0538792A2 (fr) * | 1991-10-21 | 1993-04-28 | Rohm Co., Ltd. | FET multicanal à lignes étroites ayant une caractéristique de bruit améliore |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS598065B2 (ja) * | 1976-01-30 | 1984-02-22 | 松下電子工業株式会社 | Mos集積回路の製造方法 |
US4183040A (en) * | 1976-02-09 | 1980-01-08 | International Business Machines Corporation | MOS RAM with implant forming peripheral depletion MOSFET channels and capacitor bottom electrodes |
US4398207A (en) * | 1976-08-24 | 1983-08-09 | Intel Corporation | MOS Digital-to-analog converter with resistor chain using compensating "dummy" metal contacts |
JPS5447488A (en) * | 1977-09-21 | 1979-04-14 | Hitachi Ltd | Production of silicon gate type mis semiconductor device |
US4277881A (en) * | 1978-05-26 | 1981-07-14 | Rockwell International Corporation | Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
US4455737A (en) * | 1978-05-26 | 1984-06-26 | Rockwell International Corporation | Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
US4587711A (en) * | 1978-05-26 | 1986-05-13 | Rockwell International Corporation | Process for high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
US4506437A (en) * | 1978-05-26 | 1985-03-26 | Rockwell International Corporation | Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
DE2832388C2 (de) * | 1978-07-24 | 1986-08-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat |
US4230954A (en) * | 1978-12-29 | 1980-10-28 | International Business Machines Corporation | Permanent or semipermanent charge transfer storage systems |
JPS5598852A (en) * | 1979-01-23 | 1980-07-28 | Nec Corp | Memory device |
JPS55153368A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Semiconductor memory device |
US4287571A (en) * | 1979-09-11 | 1981-09-01 | International Business Machines Corporation | High density transistor arrays |
US4240845A (en) * | 1980-02-04 | 1980-12-23 | International Business Machines Corporation | Method of fabricating random access memory device |
JPS57134963A (en) * | 1981-02-16 | 1982-08-20 | Fujitsu Ltd | Semiconductor memory |
US4456888A (en) * | 1981-03-26 | 1984-06-26 | Raytheon Company | Radio frequency network having plural electrically interconnected field effect transistor cells |
JPS57194567A (en) * | 1981-05-27 | 1982-11-30 | Hitachi Ltd | Semiconductor memory device |
US4652898A (en) * | 1984-07-19 | 1987-03-24 | International Business Machines Corporation | High speed merged charge memory |
US5087591A (en) * | 1985-01-22 | 1992-02-11 | Texas Instruments Incorporated | Contact etch process |
US4679302A (en) * | 1986-05-12 | 1987-07-14 | Northern Telecom Limited | Double polysilicon integrated circuit process |
JPH0828473B2 (ja) * | 1988-09-29 | 1996-03-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5204545A (en) * | 1989-11-22 | 1993-04-20 | Mitsubishi Denki Kabushiki Kaisha | Structure for preventing field concentration in semiconductor device and method of forming the same |
US5495121A (en) * | 1991-09-30 | 1996-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR950034754A (ko) * | 1994-05-06 | 1995-12-28 | 윌리엄 이. 힐러 | 폴리실리콘 저항을 형성하는 방법 및 이 방법으로부터 제조된 저항 |
KR100308871B1 (ko) * | 1998-12-28 | 2001-11-03 | 윤덕용 | 동축 구조의 신호선 및 그의 제조 방법 |
US7239219B2 (en) * | 2001-12-03 | 2007-07-03 | Microfabrica Inc. | Miniature RF and microwave components and methods for fabricating such components |
AU2002360464A1 (en) * | 2001-12-03 | 2003-06-17 | Memgen Corporation | Miniature rf and microwave components and methods for fabricating such components |
US9614266B2 (en) | 2001-12-03 | 2017-04-04 | Microfabrica Inc. | Miniature RF and microwave components and methods for fabricating such components |
TWI238513B (en) | 2003-03-04 | 2005-08-21 | Rohm & Haas Elect Mat | Coaxial waveguide microstructures and methods of formation thereof |
US10297421B1 (en) | 2003-05-07 | 2019-05-21 | Microfabrica Inc. | Plasma etching of dielectric sacrificial material from reentrant multi-layer metal structures |
US8395199B2 (en) * | 2006-03-25 | 2013-03-12 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
US7932548B2 (en) * | 2006-07-14 | 2011-04-26 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
JP4364226B2 (ja) * | 2006-09-21 | 2009-11-11 | 株式会社東芝 | 半導体集積回路 |
EP1939137B1 (fr) | 2006-12-30 | 2016-08-24 | Nuvotronics, LLC | Microstructures tridimensionnelles et leurs procédés de formation |
KR101472134B1 (ko) | 2007-03-20 | 2014-12-15 | 누보트로닉스, 엘.엘.씨 | 동축 전송선 마이크로구조물 및 그의 형성방법 |
US7755174B2 (en) | 2007-03-20 | 2010-07-13 | Nuvotonics, LLC | Integrated electronic components and methods of formation thereof |
US20110123783A1 (en) | 2009-11-23 | 2011-05-26 | David Sherrer | Multilayer build processses and devices thereof |
US8917150B2 (en) * | 2010-01-22 | 2014-12-23 | Nuvotronics, Llc | Waveguide balun having waveguide structures disposed over a ground plane and having probes located in channels |
JP5639194B2 (ja) * | 2010-01-22 | 2014-12-10 | ヌボトロニクス,エルエルシー | 熱制御 |
US8866300B1 (en) | 2011-06-05 | 2014-10-21 | Nuvotronics, Llc | Devices and methods for solder flow control in three-dimensional microstructures |
US8814601B1 (en) * | 2011-06-06 | 2014-08-26 | Nuvotronics, Llc | Batch fabricated microconnectors |
KR101982887B1 (ko) | 2011-07-13 | 2019-05-27 | 누보트로닉스, 인크. | 전자 및 기계 구조체들을 제조하는 방법들 |
US9325044B2 (en) | 2013-01-26 | 2016-04-26 | Nuvotronics, Inc. | Multi-layer digital elliptic filter and method |
US9306254B1 (en) | 2013-03-15 | 2016-04-05 | Nuvotronics, Inc. | Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration |
US9306255B1 (en) | 2013-03-15 | 2016-04-05 | Nuvotronics, Inc. | Microstructure including microstructural waveguide elements and/or IC chips that are mechanically interconnected to each other |
KR20160133422A (ko) | 2014-01-17 | 2016-11-22 | 누보트로닉스, 인크. | 웨이퍼 규모 테스트 인터페이스 유닛 및 컨택터 |
US10847469B2 (en) | 2016-04-26 | 2020-11-24 | Cubic Corporation | CTE compensation for wafer-level and chip-scale packages and assemblies |
EP3224899A4 (fr) | 2014-12-03 | 2018-08-22 | Nuvotronics, Inc. | Systèmes et procédés de fabrication de circuits et de lignes de transmission empilés |
US10319654B1 (en) | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA974657A (en) * | 1971-12-28 | 1975-09-16 | Matsushita Electric Industrial Co., Ltd. | Switching device equipped with a semiconductor memory element |
US3893152A (en) * | 1973-07-25 | 1975-07-01 | Hung Chang Lin | Metal nitride oxide semiconductor integrated circuit structure |
US3889287A (en) * | 1973-12-06 | 1975-06-10 | Motorola Inc | Mnos memory matrix |
US3836894A (en) * | 1974-01-22 | 1974-09-17 | Westinghouse Electric Corp | Mnos/sos random access memory |
-
1975
- 1975-09-29 US US05/617,462 patent/US4021789A/en not_active Expired - Lifetime
-
1976
- 1976-08-24 NL NL7609377A patent/NL7609377A/xx not_active Application Discontinuation
- 1976-08-25 FR FR7626312A patent/FR2326038A1/fr active Granted
- 1976-08-27 JP JP51101756A patent/JPS5242382A/ja active Granted
- 1976-08-31 GB GB36053/76A patent/GB1496119A/en not_active Expired
- 1976-09-17 IT IT27306/76A patent/IT1070004B/it active
- 1976-09-21 DE DE19762642303 patent/DE2642303A1/de not_active Withdrawn
- 1976-09-27 CA CA262,156A patent/CA1043467A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0538792A2 (fr) * | 1991-10-21 | 1993-04-28 | Rohm Co., Ltd. | FET multicanal à lignes étroites ayant une caractéristique de bruit améliore |
EP0538792A3 (en) * | 1991-10-21 | 1993-06-02 | Rohm Co., Ltd. | Multiple narrow-line-channel fet having improved noise characteristics |
Also Published As
Publication number | Publication date |
---|---|
DE2642303A1 (de) | 1977-04-07 |
CA1043467A (fr) | 1978-11-28 |
NL7609377A (nl) | 1977-03-31 |
GB1496119A (en) | 1977-12-30 |
FR2326038B1 (fr) | 1979-07-06 |
IT1070004B (it) | 1985-03-25 |
JPS5617830B2 (fr) | 1981-04-24 |
US4021789A (en) | 1977-05-03 |
JPS5242382A (en) | 1977-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |