FR2319978A1 - Circuits integres semi-conducteurs et procede de preparation - Google Patents
Circuits integres semi-conducteurs et procede de preparationInfo
- Publication number
- FR2319978A1 FR2319978A1 FR7622906A FR7622906A FR2319978A1 FR 2319978 A1 FR2319978 A1 FR 2319978A1 FR 7622906 A FR7622906 A FR 7622906A FR 7622906 A FR7622906 A FR 7622906A FR 2319978 A1 FR2319978 A1 FR 2319978A1
- Authority
- FR
- France
- Prior art keywords
- integrated circuits
- semiconductor integrated
- preparation process
- semiconductor
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50091090A JPS5215262A (en) | 1975-07-28 | 1975-07-28 | Semiconductor device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2319978A1 true FR2319978A1 (fr) | 1977-02-25 |
FR2319978B1 FR2319978B1 (fr) | 1978-12-15 |
Family
ID=14016812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7622906A Granted FR2319978A1 (fr) | 1975-07-28 | 1976-07-27 | Circuits integres semi-conducteurs et procede de preparation |
Country Status (7)
Country | Link |
---|---|
US (1) | US4128845A (fr) |
JP (1) | JPS5215262A (fr) |
CA (1) | CA1042559A (fr) |
DE (1) | DE2633714C2 (fr) |
FR (1) | FR2319978A1 (fr) |
GB (1) | GB1514370A (fr) |
NL (1) | NL180264C (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2387516A1 (fr) * | 1977-04-12 | 1978-11-10 | Philips Nv | Procede pour fabriquer un dispositif semi-conducteur comportant de tres petits transistors complementaires, et dispositif fabrique de la sorte |
EP0139266A2 (fr) * | 1983-10-07 | 1985-05-02 | Kabushiki Kaisha Toshiba | Dispositif semi-conducteur intégré comportant un transistor MOS et un transistor bipolaire et son procédé de fabrication |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5351985A (en) * | 1976-10-22 | 1978-05-11 | Hitachi Ltd | Semiconductor wiring constitution |
US4160991A (en) * | 1977-10-25 | 1979-07-10 | International Business Machines Corporation | High performance bipolar device and method for making same |
US4190466A (en) * | 1977-12-22 | 1980-02-26 | International Business Machines Corporation | Method for making a bipolar transistor structure utilizing self-passivating diffusion sources |
NL190710C (nl) * | 1978-02-10 | 1994-07-01 | Nec Corp | Geintegreerde halfgeleiderketen. |
US4236122A (en) * | 1978-04-26 | 1980-11-25 | Bell Telephone Laboratories, Incorporated | Mesa devices fabricated on channeled substrates |
JPS577959A (en) * | 1980-06-19 | 1982-01-16 | Toshiba Corp | Semiconductor device |
US4446613A (en) * | 1981-10-19 | 1984-05-08 | Intel Corporation | Integrated circuit resistor and method of fabrication |
JPH0719838B2 (ja) * | 1985-07-19 | 1995-03-06 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
US4922318A (en) * | 1985-09-18 | 1990-05-01 | Advanced Micro Devices, Inc. | Bipolar and MOS devices fabricated on same integrated circuit substrate |
US4883772A (en) * | 1986-09-11 | 1989-11-28 | National Semiconductor Corporation | Process for making a self-aligned silicide shunt |
US4904980A (en) * | 1988-08-19 | 1990-02-27 | Westinghouse Electric Corp. | Refractory resistors with etch stop for superconductor integrated circuits |
US6060375A (en) * | 1996-07-31 | 2000-05-09 | Lsi Logic Corporation | Process for forming re-entrant geometry for gate electrode of integrated circuit structure |
US5895960A (en) * | 1996-09-03 | 1999-04-20 | Lucent Technologies Inc. | Thin oxide mask level defined resistor |
US7208361B2 (en) * | 2004-03-24 | 2007-04-24 | Intel Corporation | Replacement gate process for making a semiconductor device that includes a metal gate electrode |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1154201B (de) * | 1960-06-28 | 1963-09-12 | Intermetall | Verfahren zur gleichzeitigen Kontaktierung von zahlreichen Halbleiterbauelementen |
US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
CA924026A (en) * | 1970-10-05 | 1973-04-03 | Tokyo Shibaura Electric Co. | Method for manufacturing a semiconductor integrated circuit isolated by dielectric material |
US3738880A (en) * | 1971-06-23 | 1973-06-12 | Rca Corp | Method of making a semiconductor device |
US3780359A (en) * | 1971-12-20 | 1973-12-18 | Ibm | Bipolar transistor with a heterojunction emitter and a method fabricating the same |
US3860836A (en) * | 1972-12-01 | 1975-01-14 | Honeywell Inc | Stabilization of emitter followers |
JPS5513426B2 (fr) * | 1974-06-18 | 1980-04-09 |
-
1975
- 1975-07-28 JP JP50091090A patent/JPS5215262A/ja active Pending
-
1976
- 1976-07-19 US US05/706,596 patent/US4128845A/en not_active Expired - Lifetime
- 1976-07-20 GB GB30065/76A patent/GB1514370A/en not_active Expired
- 1976-07-21 CA CA257,488A patent/CA1042559A/fr not_active Expired
- 1976-07-27 DE DE2633714A patent/DE2633714C2/de not_active Expired
- 1976-07-27 FR FR7622906A patent/FR2319978A1/fr active Granted
- 1976-07-27 NL NLAANVRAGE7608309,A patent/NL180264C/xx not_active IP Right Cessation
Non-Patent Citations (3)
Title |
---|
*REVUE US ELECTRONICS, VOL. 49, 22 JANVIER 1976 "SELF ALIGNMENT METHOD OF FABRICATING BIPOLAR TRANSISTORS BOOSTS FREQUENCY", PAGES 7E, 8E.) * |
PAGES 65-66 * |
REVUE JA JOURNAL OF ELECTRONIC ENGINEERING, NO 96, NOVEMBRE 1974 "STEP ELECTRODE TRANSISTOR IN THE IMPROVED RADIO-FREQUENCY CHARACTERISTIC" * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2387516A1 (fr) * | 1977-04-12 | 1978-11-10 | Philips Nv | Procede pour fabriquer un dispositif semi-conducteur comportant de tres petits transistors complementaires, et dispositif fabrique de la sorte |
EP0139266A2 (fr) * | 1983-10-07 | 1985-05-02 | Kabushiki Kaisha Toshiba | Dispositif semi-conducteur intégré comportant un transistor MOS et un transistor bipolaire et son procédé de fabrication |
EP0139266A3 (en) * | 1983-10-07 | 1986-01-22 | Kabushiki Kaisha Toshiba | A semiconductor integrated circuit device comprising an mos transistor and a bipolar transistor and a manufacturing method of the same |
US4818720A (en) * | 1983-10-07 | 1989-04-04 | Kabushiki Kaisha Toshiba | Method for manufacturing a BiCMOS device |
US4965220A (en) * | 1983-10-07 | 1990-10-23 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor integrated circuit device comprising an MOS transistor and a bipolar transistor |
Also Published As
Publication number | Publication date |
---|---|
US4128845A (en) | 1978-12-05 |
DE2633714A1 (de) | 1977-02-03 |
JPS5215262A (en) | 1977-02-04 |
DE2633714C2 (de) | 1984-12-06 |
FR2319978B1 (fr) | 1978-12-15 |
NL180264C (nl) | 1987-01-16 |
NL180264B (nl) | 1986-08-18 |
GB1514370A (en) | 1978-06-14 |
NL7608309A (nl) | 1977-02-01 |
CA1042559A (fr) | 1978-11-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
CA | Change of address |