NL190710C - Geintegreerde halfgeleiderketen. - Google Patents

Geintegreerde halfgeleiderketen.

Info

Publication number
NL190710C
NL190710C NL7901023A NL7901023A NL190710C NL 190710 C NL190710 C NL 190710C NL 7901023 A NL7901023 A NL 7901023A NL 7901023 A NL7901023 A NL 7901023A NL 190710 C NL190710 C NL 190710C
Authority
NL
Netherlands
Prior art keywords
integrated semiconductor
semiconductor chain
chain
integrated
semiconductor
Prior art date
Application number
NL7901023A
Other languages
English (en)
Other versions
NL7901023A (nl
NL190710B (nl
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1425278A external-priority patent/JPS54107280A/ja
Priority claimed from JP1425178A external-priority patent/JPS54107279A/ja
Application filed by Nec Corp filed Critical Nec Corp
Publication of NL7901023A publication Critical patent/NL7901023A/nl
Publication of NL190710B publication Critical patent/NL190710B/nl
Application granted granted Critical
Publication of NL190710C publication Critical patent/NL190710C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/019—Contacts of silicides
NL7901023A 1978-02-10 1979-02-08 Geintegreerde halfgeleiderketen. NL190710C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1425278A JPS54107280A (en) 1978-02-10 1978-02-10 Semiconductor integrated circuit unit
JP1425178A JPS54107279A (en) 1978-02-10 1978-02-10 Semiconductor device

Publications (3)

Publication Number Publication Date
NL7901023A NL7901023A (nl) 1979-08-14
NL190710B NL190710B (nl) 1994-02-01
NL190710C true NL190710C (nl) 1994-07-01

Family

ID=26350166

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7901023A NL190710C (nl) 1978-02-10 1979-02-08 Geintegreerde halfgeleiderketen.

Country Status (5)

Country Link
US (2) US4450470A (nl)
DE (3) DE2905022A1 (nl)
FR (1) FR2417187A1 (nl)
GB (4) GB2102625B (nl)
NL (1) NL190710C (nl)

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US4285117A (en) * 1979-09-06 1981-08-25 Teletype Corporation Method of manufacturing a device in a silicon wafer
DE3064143D1 (en) * 1979-12-03 1983-08-18 Ibm Process for producing a vertical pnp transistor and transistor so produced
EP0056186A3 (en) * 1981-01-08 1983-07-20 Texas Instruments Incorporated Integrated circuit device with interconnect-level logic diodes
US4584594A (en) * 1981-05-08 1986-04-22 Fairchild Camera & Instrument Corp. Logic structure utilizing polycrystalline silicon Schottky diodes
US4418468A (en) * 1981-05-08 1983-12-06 Fairchild Camera & Instrument Corporation Process for fabricating a logic structure utilizing polycrystalline silicon Schottky diodes
JPS582068A (ja) * 1981-06-26 1983-01-07 Toshiba Corp 半導体装置およびその製造方法
EP0078221A3 (en) * 1981-10-27 1986-06-11 Fairchild Semiconductor Corporation Polycrystalline silicon diode with metal silicide contact
US4622575A (en) * 1981-10-27 1986-11-11 Fairchild Semiconductor Corporation Integrated circuit bipolar memory cell
US4488350A (en) * 1981-10-27 1984-12-18 Fairchild Camera & Instrument Corp. Method of making an integrated circuit bipolar memory cell
NL8105920A (nl) * 1981-12-31 1983-07-18 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4543595A (en) * 1982-05-20 1985-09-24 Fairchild Camera And Instrument Corporation Bipolar memory cell
JPS6051272B2 (ja) * 1982-05-31 1985-11-13 株式会社東芝 積層型ｃｍｏｓインバ−タ装置
JPS5994849A (ja) * 1982-11-24 1984-05-31 Nec Corp 半導体集積回路装置
JPS60130844A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体装置の製造方法
IT1213120B (it) * 1984-01-10 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari a basse tensioni di soglia in circuiti integrati ad alta densita' e struttura da esso risultante.
US4693925A (en) * 1984-03-01 1987-09-15 Advanced Micro Devices, Inc. Integrated circuit structure having intermediate metal silicide layer
US4581815A (en) * 1984-03-01 1986-04-15 Advanced Micro Devices, Inc. Integrated circuit structure having intermediate metal silicide layer and method of making same
KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치
US4616404A (en) * 1984-11-30 1986-10-14 Advanced Micro Devices, Inc. Method of making improved lateral polysilicon diode by treating plasma etched sidewalls to remove defects
GB2171249A (en) * 1985-02-14 1986-08-20 Siliconix Ltd Improved monolithic integrated circuits
JPH0654795B2 (ja) * 1986-04-07 1994-07-20 三菱電機株式会社 半導体集積回路装置及びその製造方法
KR0120196B1 (ko) * 1987-05-13 1997-10-17 미다 가쓰시게 반도체 집적회로장치 및 그 제조방법
FR2615326B1 (fr) * 1987-05-15 1990-08-31 Fuji Electric Co Ltd Dispositif a semi-conducteurs du type multi-emetteur
WO1989005516A1 (en) * 1987-12-02 1989-06-15 Advanced Micro Devices, Inc. Self-aligned semiconductor devices
WO1989005519A1 (en) * 1987-12-02 1989-06-15 Advanced Micro Devices, Inc. Self-aligned interconnects for semiconductor devices
US5057902A (en) * 1987-12-02 1991-10-15 Advanced Micro Devices, Inc. Self-aligned semiconductor devices
US5045483A (en) * 1990-04-02 1991-09-03 National Semiconductor Corporation Self-aligned silicided base bipolar transistor and resistor and method of fabrication
DE4121051A1 (de) * 1991-06-26 1993-01-07 Eurosil Electronic Gmbh Halbleiteranordnung und verfahren zur herstellung
US5182627A (en) * 1991-09-30 1993-01-26 Sgs-Thomson Microelectronics, Inc. Interconnect and resistor for integrated circuits
US5332913A (en) * 1991-12-17 1994-07-26 Intel Corporation Buried interconnect structure for semiconductor devices
US5478771A (en) * 1993-05-28 1995-12-26 Sgs-Thomson Microelectronics, Inc. Method of forming local interconnect structure without P-N junction between active elements
US5975685A (en) * 1993-12-28 1999-11-02 Canon Kabushiki Kaisha Ink jet recording head having an oriented p-n junction diode, and recording apparatus using the head
US6112699A (en) * 1994-02-28 2000-09-05 Biozyme Systems, Inc. Euphausiid harvesting and processing method and apparatus
US5589415A (en) * 1995-06-07 1996-12-31 Sgs-Thomson Microelectronics, Inc. Method for forming a semiconductor structure with self-aligned contacts
US5670417A (en) * 1996-03-25 1997-09-23 Motorola, Inc. Method for fabricating self-aligned semiconductor component
KR100215841B1 (ko) * 1997-04-10 1999-08-16 구본준 바이폴라소자 제조방법
KR100313940B1 (ko) * 1999-04-02 2001-11-15 김영환 반도체 소자 및 그 제조방법
US6690083B1 (en) * 2000-06-01 2004-02-10 Koninklijke Philips Electronics N.V. Use of silicide blocking layer to create high valued resistor and diode for sub-1V bandgap
US7449099B1 (en) * 2004-04-13 2008-11-11 Novellus Systems, Inc. Selectively accelerated plating of metal features
US20040235258A1 (en) * 2003-05-19 2004-11-25 Wu David Donggang Method of forming resistive structures
JP4544335B2 (ja) * 2008-04-15 2010-09-15 ソニー株式会社 反応処理装置
JP2009254260A (ja) * 2008-04-15 2009-11-05 Sony Corp 反応処理装置

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US3651385A (en) * 1968-09-18 1972-03-21 Sony Corp Semiconductor device including a polycrystalline diode
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US3667008A (en) * 1970-10-29 1972-05-30 Rca Corp Semiconductor device employing two-metal contact and polycrystalline isolation means
JPS5317393B2 (nl) * 1973-01-16 1978-06-08
US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
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US4160989A (en) * 1975-12-29 1979-07-10 U.S. Philips Corporation Integrated circuit having complementary bipolar transistors
US4013489A (en) * 1976-02-10 1977-03-22 Intel Corporation Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit
JPS52119186A (en) * 1976-03-31 1977-10-06 Nec Corp Manufacture of semiconductor
JPS539469A (en) * 1976-07-15 1978-01-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device having electrode of stepped structure and its production
NL7612883A (nl) * 1976-11-19 1978-05-23 Philips Nv Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan.
US4109372A (en) * 1977-05-02 1978-08-29 International Business Machines Corporation Method for making an insulated gate field effect transistor utilizing a silicon gate and silicide interconnection vias
JPS6048914B2 (ja) * 1977-07-29 1985-10-30 日本電気株式会社 半導体装置
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US4196228A (en) * 1978-06-10 1980-04-01 Monolithic Memories, Inc. Fabrication of high resistivity semiconductor resistors by ion implanatation
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Also Published As

Publication number Publication date
GB2014785A (en) 1979-08-30
DE2954502C2 (nl) 1990-05-03
DE2905022A1 (de) 1979-10-31
GB2075259A (en) 1981-11-11
US5017503A (en) 1991-05-21
GB2014785B (en) 1983-02-02
GB2070860B (en) 1982-12-22
DE2905022C2 (nl) 1990-09-06
NL7901023A (nl) 1979-08-14
GB2075259B (en) 1983-02-23
GB2070860A (en) 1981-09-09
GB2102625B (en) 1983-06-29
DE2954501C2 (nl) 1990-08-30
FR2417187B1 (nl) 1984-12-14
FR2417187A1 (fr) 1979-09-07
GB2102625A (en) 1983-02-02
US4450470A (en) 1984-05-22
NL190710B (nl) 1994-02-01

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Free format text: NEC CORPORATION

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