FR2321190A1 - Composant semi-conducteur et son procede de fabrication - Google Patents

Composant semi-conducteur et son procede de fabrication

Info

Publication number
FR2321190A1
FR2321190A1 FR7613338A FR7613338A FR2321190A1 FR 2321190 A1 FR2321190 A1 FR 2321190A1 FR 7613338 A FR7613338 A FR 7613338A FR 7613338 A FR7613338 A FR 7613338A FR 2321190 A1 FR2321190 A1 FR 2321190A1
Authority
FR
France
Prior art keywords
manufacturing process
semiconductor component
semiconductor
component
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7613338A
Other languages
English (en)
Other versions
FR2321190B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2321190A1 publication Critical patent/FR2321190A1/fr
Application granted granted Critical
Publication of FR2321190B1 publication Critical patent/FR2321190B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
FR7613338A 1975-08-13 1976-05-05 Composant semi-conducteur et son procede de fabrication Granted FR2321190A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50098179A JPS5222071A (en) 1975-08-13 1975-08-13 Method of selective etching of film of polyamide resin

Publications (2)

Publication Number Publication Date
FR2321190A1 true FR2321190A1 (fr) 1977-03-11
FR2321190B1 FR2321190B1 (fr) 1979-08-17

Family

ID=14212791

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7613338A Granted FR2321190A1 (fr) 1975-08-13 1976-05-05 Composant semi-conducteur et son procede de fabrication

Country Status (5)

Country Link
JP (1) JPS5222071A (fr)
DE (1) DE2618937C3 (fr)
FR (1) FR2321190A1 (fr)
GB (1) GB1510944A (fr)
NL (1) NL7604652A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0082417A2 (fr) * 1981-12-21 1983-06-29 Hitachi, Ltd. Procédé pour l'attaque chimique sélective d'une couche de résine du type polyimide
EP0091870A1 (fr) * 1982-04-14 1983-10-19 Commissariat à l'Energie Atomique Procédé de positionnement d'une ligne d'interconnexion sur un trou de contact électrique d'un circuit intégré
FR2537779A1 (fr) * 1982-12-10 1984-06-15 Commissariat Energie Atomique Procede de positionnement d'un trou de contact electrique entre deux lignes d'interconnexion d'un circuit integre
FR2550660A2 (fr) * 1982-04-14 1985-02-15 Commissariat Energie Atomique Perfectionnement au procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
EP0139549A1 (fr) * 1983-08-12 1985-05-02 Commissariat A L'energie Atomique Procédé de positionnement d'une ligne d'interconnexion sur un trou de contact électrique d'un circuit intégré
EP0511691A2 (fr) * 1988-07-13 1992-11-04 International Business Machines Corporation Attaque par voie humide de polyimides durcis par voie chimique

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54106599A (en) * 1978-02-09 1979-08-21 Hitachi Chem Co Ltd Preparation of polyamide intermediate for semiconductor processing
JPS54179102U (fr) * 1978-06-07 1979-12-18
JPS5515502A (en) * 1978-07-18 1980-02-02 Hitachi Ltd Running control system for manless wagon
JPS557880A (en) * 1979-04-27 1980-01-21 Hitachi Ltd Etching solution for organic resin
JP3586468B2 (ja) 1995-01-17 2004-11-10 新日鐵化学株式会社 積層体

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49120504A (fr) * 1973-03-16 1974-11-18

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0082417A2 (fr) * 1981-12-21 1983-06-29 Hitachi, Ltd. Procédé pour l'attaque chimique sélective d'une couche de résine du type polyimide
EP0082417A3 (en) * 1981-12-21 1986-03-26 Hitachi, Ltd. Selective etching method of polyimide type resin film
EP0091870A1 (fr) * 1982-04-14 1983-10-19 Commissariat à l'Energie Atomique Procédé de positionnement d'une ligne d'interconnexion sur un trou de contact électrique d'un circuit intégré
FR2525389A1 (fr) * 1982-04-14 1983-10-21 Commissariat Energie Atomique Procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
FR2550660A2 (fr) * 1982-04-14 1985-02-15 Commissariat Energie Atomique Perfectionnement au procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
FR2537779A1 (fr) * 1982-12-10 1984-06-15 Commissariat Energie Atomique Procede de positionnement d'un trou de contact electrique entre deux lignes d'interconnexion d'un circuit integre
EP0112239A1 (fr) * 1982-12-10 1984-06-27 Commissariat A L'energie Atomique Procédé de positionnement d'un trou de contact électrique entre deux lignes d'interconnexion d'un circuit intégré
US4518629A (en) * 1982-12-10 1985-05-21 Commissariat A L'energie Atomique Process for positioning an electrical contact hole between two interconnection lines of an integrated circuit
EP0139549A1 (fr) * 1983-08-12 1985-05-02 Commissariat A L'energie Atomique Procédé de positionnement d'une ligne d'interconnexion sur un trou de contact électrique d'un circuit intégré
US4541892A (en) * 1983-08-12 1985-09-17 Commissariat A L'energie Atomique Process for the positioning of an interconnection line on an electrical contact hole of an integrated circuit
EP0511691A2 (fr) * 1988-07-13 1992-11-04 International Business Machines Corporation Attaque par voie humide de polyimides durcis par voie chimique
EP0511691A3 (en) * 1988-07-13 1993-03-03 International Business Machines Corporation Wet etching of cured polyimide

Also Published As

Publication number Publication date
DE2618937B2 (de) 1978-06-29
FR2321190B1 (fr) 1979-08-17
NL7604652A (nl) 1977-02-15
DE2618937A1 (de) 1977-02-17
DE2618937C3 (de) 1979-02-22
JPS5222071A (en) 1977-02-19
GB1510944A (en) 1978-05-17
JPS5328342B2 (fr) 1978-08-14

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