FR2276692A1 - Procede de fabrication de dispositifs semiconducteurs - Google Patents
Procede de fabrication de dispositifs semiconducteursInfo
- Publication number
- FR2276692A1 FR2276692A1 FR7508687A FR7508687A FR2276692A1 FR 2276692 A1 FR2276692 A1 FR 2276692A1 FR 7508687 A FR7508687 A FR 7508687A FR 7508687 A FR7508687 A FR 7508687A FR 2276692 A1 FR2276692 A1 FR 2276692A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor devices
- manufacturing semiconductor
- manufacturing
- devices
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Dicing (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US484084A US3897627A (en) | 1974-06-28 | 1974-06-28 | Method for manufacturing semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2276692A1 true FR2276692A1 (fr) | 1976-01-23 |
Family
ID=23922675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7508687A Withdrawn FR2276692A1 (fr) | 1974-06-28 | 1975-03-20 | Procede de fabrication de dispositifs semiconducteurs |
Country Status (7)
Country | Link |
---|---|
US (1) | US3897627A (fr) |
JP (1) | JPS531630B2 (fr) |
BE (1) | BE827022A (fr) |
DE (1) | DE2511925A1 (fr) |
FR (1) | FR2276692A1 (fr) |
GB (1) | GB1476585A (fr) |
IT (1) | IT1032591B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0176880A2 (fr) * | 1984-09-26 | 1986-04-09 | Siemens Aktiengesellschaft | Procédé pour la fabrication de diodes laser comportant des éléments intégrés de refroidissement |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4023258A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
US4023260A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
US4080722A (en) * | 1976-03-22 | 1978-03-28 | Rca Corporation | Method of manufacturing semiconductor devices having a copper heat capacitor and/or copper heat sink |
FR2420208A1 (fr) * | 1978-03-17 | 1979-10-12 | Thomson Csf | Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee |
US4237600A (en) * | 1978-11-16 | 1980-12-09 | Rca Corporation | Method for fabricating stacked semiconductor diodes for high power/low loss applications |
US4384400A (en) * | 1979-12-06 | 1983-05-24 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating monolithically interconnected series-parallel avalanche diodes |
US4276098A (en) * | 1980-03-31 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Batch processing of semiconductor devices |
DE3211391A1 (de) * | 1982-03-27 | 1983-09-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer halbleiteranordnung |
US4605919A (en) * | 1982-10-04 | 1986-08-12 | Becton, Dickinson And Company | Piezoresistive transducer |
US4498229A (en) * | 1982-10-04 | 1985-02-12 | Becton, Dickinson And Company | Piezoresistive transducer |
JPH0215652A (ja) * | 1988-07-01 | 1990-01-19 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
KR100287919B1 (ko) * | 1992-01-06 | 2001-05-02 | 사토 게니치로 | 더미 패턴을 갖는 반도체 칩 |
JP2836334B2 (ja) * | 1992-01-23 | 1998-12-14 | 三菱電機株式会社 | 高出力半導体装置の製造方法 |
US5580831A (en) * | 1993-07-28 | 1996-12-03 | Fujitsu Limited | Sawcut method of forming alignment marks on two faces of a substrate |
US5413659A (en) * | 1993-09-30 | 1995-05-09 | Minnesota Mining And Manufacturing Company | Array of conductive pathways |
US5882988A (en) * | 1995-08-16 | 1999-03-16 | Philips Electronics North America Corporation | Semiconductor chip-making without scribing |
JPH09172223A (ja) * | 1995-12-19 | 1997-06-30 | Sony Corp | 半導体装置と半導体装置の製造方法 |
DE19710375C2 (de) * | 1997-03-13 | 2002-11-07 | Micronas Semiconductor Holding | Verfahren zum Herstellen von räumlich strukturierten Bauteilen |
EP1668687A4 (fr) * | 2003-09-19 | 2007-11-07 | Tinggi Tech Private Ltd | Fabrication d'une couche metallique conductrice sur des dispositifs semiconducteurs |
CN101335320B (zh) * | 2003-09-19 | 2012-06-06 | 霆激科技股份有限公司 | 用于制作发光器件的方法 |
US8039363B2 (en) * | 2003-12-23 | 2011-10-18 | Tessera, Inc. | Small chips with fan-out leads |
US20050133891A1 (en) * | 2003-12-23 | 2005-06-23 | Tessera, Inc. | System and method for increasing the ball pitch of an electronic circuit package |
EP1730790B1 (fr) * | 2004-03-15 | 2011-11-09 | Tinggi Technologies Private Limited | Fabrication de dispositifs a semiconducteur |
WO2005098974A1 (fr) * | 2004-04-07 | 2005-10-20 | Tinggi Technologies Private Limited | Fabrication d'une couche retrofeflechissante sur des diodes electroluminescentes a semiconducteur |
SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
SG131803A1 (en) * | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
SG133432A1 (en) * | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
SG140512A1 (en) * | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
US7759201B2 (en) | 2007-12-17 | 2010-07-20 | Sandisk 3D Llc | Method for fabricating pitch-doubling pillar structures |
US7981592B2 (en) | 2008-04-11 | 2011-07-19 | Sandisk 3D Llc | Double patterning method |
US7713818B2 (en) | 2008-04-11 | 2010-05-11 | Sandisk 3D, Llc | Double patterning method |
US7786015B2 (en) | 2008-04-28 | 2010-08-31 | Sandisk 3D Llc | Method for fabricating self-aligned complementary pillar structures and wiring |
US8026178B2 (en) | 2010-01-12 | 2011-09-27 | Sandisk 3D Llc | Patterning method for high density pillar structures |
DE102012111358A1 (de) * | 2012-11-23 | 2014-05-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3820236A (en) * | 1969-06-20 | 1974-06-28 | Texas Instruments Inc | Method of making metal semiconductor diodes having plated heat sink members |
FR2100997B1 (fr) * | 1970-08-04 | 1973-12-21 | Silec Semi Conducteurs | |
US3720997A (en) * | 1971-01-11 | 1973-03-20 | Motorola Inc | Eutectic plating and breaking silicon wafers |
BE791930A (fr) * | 1971-12-02 | 1973-03-16 | Western Electric Co | Dispositif electroluminescent et procede pour sa fabrication |
-
1974
- 1974-06-28 US US484084A patent/US3897627A/en not_active Expired - Lifetime
-
1975
- 1975-03-19 DE DE19752511925 patent/DE2511925A1/de active Pending
- 1975-03-20 FR FR7508687A patent/FR2276692A1/fr not_active Withdrawn
- 1975-03-21 BE BE154625A patent/BE827022A/fr unknown
- 1975-03-21 GB GB1189575A patent/GB1476585A/en not_active Expired
- 1975-03-24 JP JP3602175A patent/JPS531630B2/ja not_active Expired
- 1975-04-01 IT IT7567845A patent/IT1032591B/it active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0176880A2 (fr) * | 1984-09-26 | 1986-04-09 | Siemens Aktiengesellschaft | Procédé pour la fabrication de diodes laser comportant des éléments intégrés de refroidissement |
EP0176880A3 (fr) * | 1984-09-26 | 1988-06-01 | Siemens Aktiengesellschaft | Procédé pour la fabrication de diodes laser comportant des éléments intégrés de refroidissement |
Also Published As
Publication number | Publication date |
---|---|
JPS531630B2 (fr) | 1978-01-20 |
DE2511925A1 (de) | 1976-01-15 |
JPS50131459A (fr) | 1975-10-17 |
BE827022A (fr) | 1975-07-16 |
IT1032591B (it) | 1979-06-20 |
GB1476585A (en) | 1977-06-16 |
US3897627A (en) | 1975-08-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |