BE803528A - Procede de fabrication de dispositifs semi-conducteurs - Google Patents

Procede de fabrication de dispositifs semi-conducteurs

Info

Publication number
BE803528A
BE803528A BE134506A BE134506A BE803528A BE 803528 A BE803528 A BE 803528A BE 134506 A BE134506 A BE 134506A BE 134506 A BE134506 A BE 134506A BE 803528 A BE803528 A BE 803528A
Authority
BE
Belgium
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Application number
BE134506A
Other languages
English (en)
Inventor
S M Henning
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE803528A publication Critical patent/BE803528A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
BE134506A 1972-08-17 1973-08-13 Procede de fabrication de dispositifs semi-conducteurs BE803528A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00281295A US3808058A (en) 1972-08-17 1972-08-17 Fabrication of mesa diode with channel guard

Publications (1)

Publication Number Publication Date
BE803528A true BE803528A (fr) 1973-12-03

Family

ID=23076696

Family Applications (1)

Application Number Title Priority Date Filing Date
BE134506A BE803528A (fr) 1972-08-17 1973-08-13 Procede de fabrication de dispositifs semi-conducteurs

Country Status (8)

Country Link
US (1) US3808058A (fr)
JP (1) JPS4960479A (fr)
BE (1) BE803528A (fr)
CA (1) CA967292A (fr)
DE (1) DE2341374A1 (fr)
FR (1) FR2196521A1 (fr)
IT (1) IT990232B (fr)
NL (1) NL7311147A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2438256A1 (de) * 1974-08-08 1976-02-19 Siemens Ag Verfahren zum herstellen einer monolithischen halbleiterverbundanordnung
JPS5138983A (fr) * 1974-09-30 1976-03-31 Hitachi Ltd
US4046595A (en) * 1974-10-18 1977-09-06 Matsushita Electronics Corporation Method for forming semiconductor devices
US4044454A (en) * 1975-04-16 1977-08-30 Ibm Corporation Method for forming integrated circuit regions defined by recessed dielectric isolation
JPS51149784A (en) * 1975-06-17 1976-12-22 Matsushita Electric Ind Co Ltd Solid state light emission device
US4030943A (en) * 1976-05-21 1977-06-21 Hughes Aircraft Company Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits
US4066473A (en) * 1976-07-15 1978-01-03 Fairchild Camera And Instrument Corporation Method of fabricating high-gain transistors
US4149904A (en) * 1977-10-21 1979-04-17 Ncr Corporation Method for forming ion-implanted self-aligned gate structure by controlled ion scattering
JPS6011161Y2 (ja) * 1979-05-16 1985-04-13 三菱重工業株式会社 コンクリ−トパイルの杭頭部破砕処理装置
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
US5268310A (en) * 1992-11-25 1993-12-07 M/A-Com, Inc. Method for making a mesa type PIN diode
KR100631279B1 (ko) * 2004-12-31 2006-10-02 동부일렉트로닉스 주식회사 고전압용 트랜지스터의 제조 방법
WO2007142603A1 (fr) * 2006-06-09 2007-12-13 Agency For Science, Technology And Research Masque perforé intégré et son procédé de fabrication

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484313A (en) * 1965-03-25 1969-12-16 Hitachi Ltd Method of manufacturing semiconductor devices
JPS4826179B1 (fr) * 1968-09-30 1973-08-07
US3639975A (en) * 1969-07-30 1972-02-08 Gen Electric Glass encapsulated semiconductor device fabrication process
GB1332932A (en) * 1970-01-15 1973-10-10 Mullard Ltd Methods of manufacturing a semiconductor device
US3728179A (en) * 1970-05-20 1973-04-17 Radiation Inc Method of etching silicon crystals
US3675313A (en) * 1970-10-01 1972-07-11 Westinghouse Electric Corp Process for producing self aligned gate field effect transistor

Also Published As

Publication number Publication date
IT990232B (it) 1975-06-20
US3808058A (en) 1974-04-30
NL7311147A (fr) 1974-02-19
JPS4960479A (fr) 1974-06-12
CA967292A (en) 1975-05-06
FR2196521A1 (fr) 1974-03-15
DE2341374A1 (de) 1974-03-14

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