BE779087A - Procede de fabrication de dispositifs a avalanche - Google Patents
Procede de fabrication de dispositifs a avalancheInfo
- Publication number
- BE779087A BE779087A BE779087A BE779087A BE779087A BE 779087 A BE779087 A BE 779087A BE 779087 A BE779087 A BE 779087A BE 779087 A BE779087 A BE 779087A BE 779087 A BE779087 A BE 779087A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing process
- avalanche devices
- avalanche
- devices
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11486171A | 1971-02-12 | 1971-02-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE779087A true BE779087A (fr) | 1972-05-30 |
Family
ID=22357843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE779087A BE779087A (fr) | 1971-02-12 | 1972-02-08 | Procede de fabrication de dispositifs a avalanche |
Country Status (11)
Country | Link |
---|---|
US (1) | US3765961A (fr) |
KR (1) | KR780000084B1 (fr) |
BE (1) | BE779087A (fr) |
CA (1) | CA929281A (fr) |
DE (1) | DE2205991B2 (fr) |
FR (1) | FR2125430B1 (fr) |
GB (1) | GB1369357A (fr) |
HK (1) | HK34976A (fr) |
IT (1) | IT949059B (fr) |
NL (1) | NL7201560A (fr) |
SE (1) | SE373692B (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3862930A (en) * | 1972-08-22 | 1975-01-28 | Us Navy | Radiation-hardened cmos devices and circuits |
DE2405067C2 (de) * | 1974-02-02 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer Halbleiteranordnung |
US3926695A (en) * | 1974-12-27 | 1975-12-16 | Itt | Etched silicon washed emitter process |
US4099998A (en) * | 1975-11-03 | 1978-07-11 | General Electric Company | Method of making zener diodes with selectively variable breakdown voltages |
US4038107B1 (en) * | 1975-12-03 | 1995-04-18 | Samsung Semiconductor Tele | Method for making transistor structures |
US4177095A (en) * | 1977-02-25 | 1979-12-04 | National Semiconductor Corporation | Process for fabricating an integrated circuit subsurface zener diode utilizing conventional processing steps |
US4213806A (en) * | 1978-10-05 | 1980-07-22 | Analog Devices, Incorporated | Forming an IC chip with buried zener diode |
US4203781A (en) * | 1978-12-27 | 1980-05-20 | Bell Telephone Laboratories, Incorporated | Laser deformation of semiconductor junctions |
JP2573201B2 (ja) * | 1987-02-26 | 1997-01-22 | 株式会社東芝 | 半導体素子の拡散層形成方法 |
US5129972A (en) * | 1987-12-23 | 1992-07-14 | The Lubrizol Corporation | Emulsifiers and explosive emulsions containing same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3345221A (en) * | 1963-04-10 | 1967-10-03 | Motorola Inc | Method of making a semiconductor device having improved pn junction avalanche characteristics |
US3328214A (en) * | 1963-04-22 | 1967-06-27 | Siliconix Inc | Process for manufacturing horizontal transistor structure |
US3477886A (en) * | 1964-12-07 | 1969-11-11 | Motorola Inc | Controlled diffusions in semiconductive materials |
US3456168A (en) * | 1965-02-19 | 1969-07-15 | United Aircraft Corp | Structure and method for production of narrow doped region semiconductor devices |
US3347720A (en) * | 1965-10-21 | 1967-10-17 | Bendix Corp | Method of forming a semiconductor by masking and diffusion |
US3457469A (en) * | 1965-11-15 | 1969-07-22 | Motorola Inc | Noise diode having an alloy zener junction |
US3477123A (en) * | 1965-12-21 | 1969-11-11 | Ibm | Masking technique for area reduction of planar transistors |
US3490962A (en) * | 1966-04-25 | 1970-01-20 | Ibm | Diffusion process |
DE1589693C3 (de) * | 1967-08-03 | 1980-04-03 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Halbleiterbauelement mit flächenhaftem PN-Übergang |
US3585464A (en) * | 1967-10-19 | 1971-06-15 | Ibm | Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material |
US3514846A (en) * | 1967-11-15 | 1970-06-02 | Bell Telephone Labor Inc | Method of fabricating a planar avalanche photodiode |
US3566218A (en) * | 1968-10-02 | 1971-02-23 | Nat Semiconductor Corp The | Multiple base width integrated circuit |
-
1971
- 1971-02-12 US US00114861A patent/US3765961A/en not_active Expired - Lifetime
- 1971-10-18 CA CA125378A patent/CA929281A/en not_active Expired
-
1972
- 1972-02-03 SE SE7201246A patent/SE373692B/xx unknown
- 1972-02-07 NL NL7201560A patent/NL7201560A/xx unknown
- 1972-02-08 BE BE779087A patent/BE779087A/fr unknown
- 1972-02-08 KR KR7800183A patent/KR780000084B1/ko active
- 1972-02-08 GB GB576372A patent/GB1369357A/en not_active Expired
- 1972-02-09 DE DE19722205991 patent/DE2205991B2/de not_active Withdrawn
- 1972-02-10 IT IT67414/72A patent/IT949059B/it active
- 1972-02-11 FR FR7204751A patent/FR2125430B1/fr not_active Expired
-
1976
- 1976-06-10 HK HK349/76*UA patent/HK34976A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
SE373692B (sv) | 1975-02-10 |
KR780000084B1 (en) | 1978-03-30 |
GB1369357A (en) | 1974-10-02 |
FR2125430A1 (fr) | 1972-09-29 |
HK34976A (en) | 1976-06-18 |
DE2205991A1 (de) | 1972-08-17 |
US3765961A (en) | 1973-10-16 |
IT949059B (it) | 1973-06-11 |
DE2205991B2 (de) | 1977-12-22 |
FR2125430B1 (fr) | 1977-04-01 |
CA929281A (en) | 1973-06-26 |
NL7201560A (fr) | 1972-08-15 |
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