FR95067E - Procédé de fabrication de dispositifs semi-conducteurs. - Google Patents

Procédé de fabrication de dispositifs semi-conducteurs.

Info

Publication number
FR95067E
FR95067E FR151075A FR151075A FR95067E FR 95067 E FR95067 E FR 95067E FR 151075 A FR151075 A FR 151075A FR 151075 A FR151075 A FR 151075A FR 95067 E FR95067 E FR 95067E
Authority
FR
France
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR151075A
Other languages
English (en)
Inventor
Jean Belmas
Jean-Pierre Pestie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR147642A priority Critical patent/FR1569872A/fr
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR151075A priority patent/FR95067E/fr
Priority to BE730645D priority patent/BE730645A/xx
Priority to NL6904936A priority patent/NL6904936A/xx
Priority to DE19691918054 priority patent/DE1918054A1/de
Priority to GB08267/69A priority patent/GB1218676A/en
Priority to US815140A priority patent/US3635772A/en
Priority to CH473569A priority patent/CH499205A/fr
Application granted granted Critical
Publication of FR95067E publication Critical patent/FR95067E/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/173—Washed emitter

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR151075A 1968-04-10 1968-05-08 Procédé de fabrication de dispositifs semi-conducteurs. Expired FR95067E (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR147642A FR1569872A (fr) 1968-04-10 1968-04-10
FR151075A FR95067E (fr) 1968-04-10 1968-05-08 Procédé de fabrication de dispositifs semi-conducteurs.
BE730645D BE730645A (fr) 1968-04-10 1969-03-28
NL6904936A NL6904936A (fr) 1968-04-10 1969-03-31
DE19691918054 DE1918054A1 (de) 1968-04-10 1969-04-09 Verfahren zur Herstellung von Halbleiter-Bauelementen
GB08267/69A GB1218676A (en) 1968-04-10 1969-04-09 Method of manufacturing semiconductor components
US815140A US3635772A (en) 1968-04-10 1969-04-10 Method of manufacturing semiconductor components
CH473569A CH499205A (fr) 1968-04-10 1969-04-10 Procédé de fabrication de composants semiconducteurs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR147642 1968-04-10
FR151075A FR95067E (fr) 1968-04-10 1968-05-08 Procédé de fabrication de dispositifs semi-conducteurs.

Publications (1)

Publication Number Publication Date
FR95067E true FR95067E (fr) 1970-06-19

Family

ID=26181939

Family Applications (2)

Application Number Title Priority Date Filing Date
FR147642A Expired FR1569872A (fr) 1968-04-10 1968-04-10
FR151075A Expired FR95067E (fr) 1968-04-10 1968-05-08 Procédé de fabrication de dispositifs semi-conducteurs.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR147642A Expired FR1569872A (fr) 1968-04-10 1968-04-10

Country Status (7)

Country Link
US (1) US3635772A (fr)
BE (1) BE730645A (fr)
CH (1) CH499205A (fr)
DE (1) DE1918054A1 (fr)
FR (2) FR1569872A (fr)
GB (1) GB1218676A (fr)
NL (1) NL6904936A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE759583A (fr) * 1970-02-20 1971-04-30 Rca Corp Transistor de puissance pour micro-ondes
US3860461A (en) * 1973-05-29 1975-01-14 Texas Instruments Inc Method for fabricating semiconductor devices utilizing composite masking
US3922184A (en) * 1973-12-26 1975-11-25 Ibm Method for forming openings through insulative layers in the fabrication of integrated circuits
DE2453134C3 (de) * 1974-11-08 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren
JPS543479A (en) * 1977-06-09 1979-01-11 Toshiba Corp Semiconductor device and its manufacture
DE2967588D1 (en) * 1979-12-28 1986-04-24 Ibm Method for achieving ideal impurity base profile in a transistor
JPS5955054A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置の製造方法
JPS60175453A (ja) * 1984-02-20 1985-09-09 Matsushita Electronics Corp トランジスタの製造方法
US4883767A (en) * 1986-12-05 1989-11-28 General Electric Company Method of fabricating self aligned semiconductor devices
US5010034A (en) * 1989-03-07 1991-04-23 National Semiconductor Corporation CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron
US6399465B1 (en) * 2000-02-24 2002-06-04 United Microelectronics Corp. Method for forming a triple well structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342650A (en) * 1964-02-10 1967-09-19 Hitachi Ltd Method of making semiconductor devices by double masking

Also Published As

Publication number Publication date
BE730645A (fr) 1969-09-29
NL6904936A (fr) 1969-10-14
US3635772A (en) 1972-01-18
GB1218676A (en) 1971-01-06
DE1918054A1 (de) 1969-10-23
FR1569872A (fr) 1969-06-06
CH499205A (fr) 1970-11-15

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