IT1032591B - Procedimento per la fabbricazione di dispostivi semiconduttori - Google Patents
Procedimento per la fabbricazione di dispostivi semiconduttoriInfo
- Publication number
- IT1032591B IT1032591B IT7567845A IT6784575A IT1032591B IT 1032591 B IT1032591 B IT 1032591B IT 7567845 A IT7567845 A IT 7567845A IT 6784575 A IT6784575 A IT 6784575A IT 1032591 B IT1032591 B IT 1032591B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacturing
- semiconductive devices
- semiconductive
- devices
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/10—Arrangements for heating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US484084A US3897627A (en) | 1974-06-28 | 1974-06-28 | Method for manufacturing semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1032591B true IT1032591B (it) | 1979-06-20 |
Family
ID=23922675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT7567845A IT1032591B (it) | 1974-06-28 | 1975-04-01 | Procedimento per la fabbricazione di dispostivi semiconduttori |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3897627A (it) |
| JP (1) | JPS531630B2 (it) |
| BE (1) | BE827022A (it) |
| DE (1) | DE2511925A1 (it) |
| FR (1) | FR2276692A1 (it) |
| GB (1) | GB1476585A (it) |
| IT (1) | IT1032591B (it) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4023260A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
| US4023258A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
| US4080722A (en) * | 1976-03-22 | 1978-03-28 | Rca Corporation | Method of manufacturing semiconductor devices having a copper heat capacitor and/or copper heat sink |
| FR2420208A1 (fr) * | 1978-03-17 | 1979-10-12 | Thomson Csf | Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee |
| US4237600A (en) * | 1978-11-16 | 1980-12-09 | Rca Corporation | Method for fabricating stacked semiconductor diodes for high power/low loss applications |
| US4384400A (en) * | 1979-12-06 | 1983-05-24 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating monolithically interconnected series-parallel avalanche diodes |
| US4276098A (en) * | 1980-03-31 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Batch processing of semiconductor devices |
| DE3211391A1 (de) * | 1982-03-27 | 1983-09-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer halbleiteranordnung |
| US4605919A (en) * | 1982-10-04 | 1986-08-12 | Becton, Dickinson And Company | Piezoresistive transducer |
| US4498229A (en) * | 1982-10-04 | 1985-02-12 | Becton, Dickinson And Company | Piezoresistive transducer |
| DE3435306A1 (de) * | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke |
| JPH0215652A (ja) * | 1988-07-01 | 1990-01-19 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| KR100287919B1 (ko) * | 1992-01-06 | 2001-05-02 | 사토 게니치로 | 더미 패턴을 갖는 반도체 칩 |
| JP2836334B2 (ja) * | 1992-01-23 | 1998-12-14 | 三菱電機株式会社 | 高出力半導体装置の製造方法 |
| US5580831A (en) * | 1993-07-28 | 1996-12-03 | Fujitsu Limited | Sawcut method of forming alignment marks on two faces of a substrate |
| US5413659A (en) * | 1993-09-30 | 1995-05-09 | Minnesota Mining And Manufacturing Company | Array of conductive pathways |
| US5882988A (en) * | 1995-08-16 | 1999-03-16 | Philips Electronics North America Corporation | Semiconductor chip-making without scribing |
| JPH09172223A (ja) * | 1995-12-19 | 1997-06-30 | Sony Corp | 半導体装置と半導体装置の製造方法 |
| DE19710375C2 (de) * | 1997-03-13 | 2002-11-07 | Micronas Semiconductor Holding | Verfahren zum Herstellen von räumlich strukturierten Bauteilen |
| EP1668688A4 (en) * | 2003-09-19 | 2011-03-02 | Tinggi Technologies Private Ltd | Fabrication of semiconductor devices |
| AU2003263726A1 (en) * | 2003-09-19 | 2005-04-11 | Xuejun Kang | Fabrication of conductive metal layer on semiconductor devices |
| US20050133891A1 (en) * | 2003-12-23 | 2005-06-23 | Tessera, Inc. | System and method for increasing the ball pitch of an electronic circuit package |
| US8039363B2 (en) * | 2003-12-23 | 2011-10-18 | Tessera, Inc. | Small chips with fan-out leads |
| JP2007535804A (ja) * | 2004-03-15 | 2007-12-06 | ティンギ テクノロジーズ プライベート リミテッド | 半導体デバイスの製造 |
| EP1756875A4 (en) * | 2004-04-07 | 2010-12-29 | Tinggi Technologies Private Ltd | PREPARATION OF A REFLECTION LAYER ON SEMICONDUCTOR LUMINAIRE DIODES |
| SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
| SG131803A1 (en) * | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
| SG133432A1 (en) * | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
| SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
| SG140512A1 (en) * | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
| US7759201B2 (en) | 2007-12-17 | 2010-07-20 | Sandisk 3D Llc | Method for fabricating pitch-doubling pillar structures |
| US7981592B2 (en) | 2008-04-11 | 2011-07-19 | Sandisk 3D Llc | Double patterning method |
| US7713818B2 (en) | 2008-04-11 | 2010-05-11 | Sandisk 3D, Llc | Double patterning method |
| US7786015B2 (en) | 2008-04-28 | 2010-08-31 | Sandisk 3D Llc | Method for fabricating self-aligned complementary pillar structures and wiring |
| US8026178B2 (en) | 2010-01-12 | 2011-09-27 | Sandisk 3D Llc | Patterning method for high density pillar structures |
| DE102012111358A1 (de) * | 2012-11-23 | 2014-05-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3820236A (en) * | 1969-06-20 | 1974-06-28 | Texas Instruments Inc | Method of making metal semiconductor diodes having plated heat sink members |
| FR2100997B1 (it) * | 1970-08-04 | 1973-12-21 | Silec Semi Conducteurs | |
| US3720997A (en) * | 1971-01-11 | 1973-03-20 | Motorola Inc | Eutectic plating and breaking silicon wafers |
| BE791930A (fr) * | 1971-12-02 | 1973-03-16 | Western Electric Co | Dispositif electroluminescent et procede pour sa fabrication |
-
1974
- 1974-06-28 US US484084A patent/US3897627A/en not_active Expired - Lifetime
-
1975
- 1975-03-19 DE DE19752511925 patent/DE2511925A1/de active Pending
- 1975-03-20 FR FR7508687A patent/FR2276692A1/fr not_active Withdrawn
- 1975-03-21 BE BE154625A patent/BE827022A/xx unknown
- 1975-03-21 GB GB1189575A patent/GB1476585A/en not_active Expired
- 1975-03-24 JP JP3602175A patent/JPS531630B2/ja not_active Expired
- 1975-04-01 IT IT7567845A patent/IT1032591B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| JPS531630B2 (it) | 1978-01-20 |
| FR2276692A1 (fr) | 1976-01-23 |
| JPS50131459A (it) | 1975-10-17 |
| BE827022A (fr) | 1975-07-16 |
| GB1476585A (en) | 1977-06-16 |
| DE2511925A1 (de) | 1976-01-15 |
| US3897627A (en) | 1975-08-05 |
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