IT1032591B - Procedimento per la fabbricazione di dispostivi semiconduttori - Google Patents

Procedimento per la fabbricazione di dispostivi semiconduttori

Info

Publication number
IT1032591B
IT1032591B IT7567845A IT6784575A IT1032591B IT 1032591 B IT1032591 B IT 1032591B IT 7567845 A IT7567845 A IT 7567845A IT 6784575 A IT6784575 A IT 6784575A IT 1032591 B IT1032591 B IT 1032591B
Authority
IT
Italy
Prior art keywords
procedure
manufacturing
semiconductive devices
semiconductive
devices
Prior art date
Application number
IT7567845A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT1032591B publication Critical patent/IT1032591B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Dicing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IT7567845A 1974-06-28 1975-04-01 Procedimento per la fabbricazione di dispostivi semiconduttori IT1032591B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US484084A US3897627A (en) 1974-06-28 1974-06-28 Method for manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
IT1032591B true IT1032591B (it) 1979-06-20

Family

ID=23922675

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7567845A IT1032591B (it) 1974-06-28 1975-04-01 Procedimento per la fabbricazione di dispostivi semiconduttori

Country Status (7)

Country Link
US (1) US3897627A (it)
JP (1) JPS531630B2 (it)
BE (1) BE827022A (it)
DE (1) DE2511925A1 (it)
FR (1) FR2276692A1 (it)
GB (1) GB1476585A (it)
IT (1) IT1032591B (it)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4023260A (en) * 1976-03-05 1977-05-17 Bell Telephone Laboratories, Incorporated Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
US4023258A (en) * 1976-03-05 1977-05-17 Bell Telephone Laboratories, Incorporated Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
US4080722A (en) * 1976-03-22 1978-03-28 Rca Corporation Method of manufacturing semiconductor devices having a copper heat capacitor and/or copper heat sink
FR2420208A1 (fr) * 1978-03-17 1979-10-12 Thomson Csf Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee
US4237600A (en) * 1978-11-16 1980-12-09 Rca Corporation Method for fabricating stacked semiconductor diodes for high power/low loss applications
US4384400A (en) * 1979-12-06 1983-05-24 The United States Of America As Represented By The Secretary Of The Army Method of fabricating monolithically interconnected series-parallel avalanche diodes
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
DE3211391A1 (de) * 1982-03-27 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiteranordnung
US4605919A (en) * 1982-10-04 1986-08-12 Becton, Dickinson And Company Piezoresistive transducer
US4498229A (en) * 1982-10-04 1985-02-12 Becton, Dickinson And Company Piezoresistive transducer
DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
JPH0215652A (ja) * 1988-07-01 1990-01-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR100287919B1 (ko) * 1992-01-06 2001-05-02 사토 게니치로 더미 패턴을 갖는 반도체 칩
JP2836334B2 (ja) * 1992-01-23 1998-12-14 三菱電機株式会社 高出力半導体装置の製造方法
US5580831A (en) * 1993-07-28 1996-12-03 Fujitsu Limited Sawcut method of forming alignment marks on two faces of a substrate
US5413659A (en) * 1993-09-30 1995-05-09 Minnesota Mining And Manufacturing Company Array of conductive pathways
US5882988A (en) * 1995-08-16 1999-03-16 Philips Electronics North America Corporation Semiconductor chip-making without scribing
JPH09172223A (ja) * 1995-12-19 1997-06-30 Sony Corp 半導体装置と半導体装置の製造方法
DE19710375C2 (de) * 1997-03-13 2002-11-07 Micronas Semiconductor Holding Verfahren zum Herstellen von räumlich strukturierten Bauteilen
CN100452328C (zh) * 2003-09-19 2009-01-14 霆激技术有限公司 半导体器件上导电金属层的制作
TWI228272B (en) * 2003-09-19 2005-02-21 Tinggi Technologies Pte Ltd Fabrication of semiconductor devices
US20050133891A1 (en) * 2003-12-23 2005-06-23 Tessera, Inc. System and method for increasing the ball pitch of an electronic circuit package
US8039363B2 (en) * 2003-12-23 2011-10-18 Tessera, Inc. Small chips with fan-out leads
EP1730790B1 (en) * 2004-03-15 2011-11-09 Tinggi Technologies Private Limited Fabrication of semiconductor devices
EP1756875A4 (en) * 2004-04-07 2010-12-29 Tinggi Technologies Private Ltd FABRICATION OF A RETROFLECTIVE LAYER ON SEMICONDUCTOR ELECTROLUMINESCENT DIODES
SG130975A1 (en) * 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
SG131803A1 (en) * 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
SG133432A1 (en) * 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) * 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
US7759201B2 (en) 2007-12-17 2010-07-20 Sandisk 3D Llc Method for fabricating pitch-doubling pillar structures
US7713818B2 (en) 2008-04-11 2010-05-11 Sandisk 3D, Llc Double patterning method
US7981592B2 (en) 2008-04-11 2011-07-19 Sandisk 3D Llc Double patterning method
US7786015B2 (en) 2008-04-28 2010-08-31 Sandisk 3D Llc Method for fabricating self-aligned complementary pillar structures and wiring
US8026178B2 (en) 2010-01-12 2011-09-27 Sandisk 3D Llc Patterning method for high density pillar structures
DE102012111358A1 (de) 2012-11-23 2014-05-28 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3820236A (en) * 1969-06-20 1974-06-28 Texas Instruments Inc Method of making metal semiconductor diodes having plated heat sink members
FR2100997B1 (it) * 1970-08-04 1973-12-21 Silec Semi Conducteurs
US3720997A (en) * 1971-01-11 1973-03-20 Motorola Inc Eutectic plating and breaking silicon wafers
BE791930A (fr) * 1971-12-02 1973-03-16 Western Electric Co Dispositif electroluminescent et procede pour sa fabrication

Also Published As

Publication number Publication date
FR2276692A1 (fr) 1976-01-23
JPS50131459A (it) 1975-10-17
JPS531630B2 (it) 1978-01-20
DE2511925A1 (de) 1976-01-15
GB1476585A (en) 1977-06-16
BE827022A (fr) 1975-07-16
US3897627A (en) 1975-08-05

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