IT1012364B - Procedimento perfezionato per la fabbricazione di dispositivi semi conduttori - Google Patents
Procedimento perfezionato per la fabbricazione di dispositivi semi conduttoriInfo
- Publication number
- IT1012364B IT1012364B IT22719/74A IT2271974A IT1012364B IT 1012364 B IT1012364 B IT 1012364B IT 22719/74 A IT22719/74 A IT 22719/74A IT 2271974 A IT2271974 A IT 2271974A IT 1012364 B IT1012364 B IT 1012364B
- Authority
- IT
- Italy
- Prior art keywords
- semi
- manufacture
- conductive devices
- perfected procedure
- perfected
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US375278A US3871067A (en) | 1973-06-29 | 1973-06-29 | Method of manufacturing a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1012364B true IT1012364B (it) | 1977-03-10 |
Family
ID=23480240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22719/74A IT1012364B (it) | 1973-06-29 | 1974-05-15 | Procedimento perfezionato per la fabbricazione di dispositivi semi conduttori |
Country Status (7)
Country | Link |
---|---|
US (1) | US3871067A (it) |
JP (1) | JPS5324300B2 (it) |
CA (1) | CA1007763A (it) |
DE (1) | DE2422120C3 (it) |
FR (1) | FR2235483B1 (it) |
GB (1) | GB1424959A (it) |
IT (1) | IT1012364B (it) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51123562A (en) * | 1975-04-21 | 1976-10-28 | Sony Corp | Production method of semiconductor device |
US4062720A (en) * | 1976-08-23 | 1977-12-13 | International Business Machines Corporation | Process for forming a ledge-free aluminum-copper-silicon conductor structure |
US4402002A (en) * | 1978-04-06 | 1983-08-30 | Harris Corporation | Radiation hardened-self aligned CMOS and method of fabrication |
US4313768A (en) * | 1978-04-06 | 1982-02-02 | Harris Corporation | Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate |
US4263605A (en) * | 1979-01-04 | 1981-04-21 | The United States Of America As Represented By The Secretary Of The Navy | Ion-implanted, improved ohmic contacts for GaAs semiconductor devices |
US4412376A (en) * | 1979-03-30 | 1983-11-01 | Ibm Corporation | Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation |
JPS5723221A (en) * | 1980-07-16 | 1982-02-06 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
US4373966A (en) * | 1981-04-30 | 1983-02-15 | International Business Machines Corporation | Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering |
GB2107744B (en) * | 1981-10-06 | 1985-07-24 | Itt Ind Ltd | Making al/si films by ion implantation; integrated circuits |
JPS58186967A (ja) * | 1982-04-26 | 1983-11-01 | Toshiba Corp | 薄膜半導体装置の製造方法 |
JPH0750696B2 (ja) * | 1987-12-14 | 1995-05-31 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPH0750697B2 (ja) * | 1989-02-20 | 1995-05-31 | 株式会社東芝 | 半導体装置の製造方法 |
KR0161116B1 (ko) * | 1995-01-06 | 1999-02-01 | 문정환 | 반도체 장치의 금속층 형성방법 |
US8294166B2 (en) | 2006-12-11 | 2012-10-23 | The Regents Of The University Of California | Transparent light emitting diodes |
US11738813B2 (en) | 2016-11-01 | 2023-08-29 | Loc Performance Products, Llc | Urethane hybrid agricultural vehicle track |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3382568A (en) * | 1965-07-22 | 1968-05-14 | Ibm | Method for providing electrical connections to semiconductor devices |
US3600797A (en) * | 1967-12-26 | 1971-08-24 | Hughes Aircraft Co | Method of making ohmic contacts to semiconductor bodies by indirect ion implantation |
BE759058A (it) * | 1969-11-19 | 1971-05-17 | Philips Nv | |
US3620851A (en) * | 1969-12-04 | 1971-11-16 | William J King | Method for making a buried layer semiconductor device |
US3682729A (en) * | 1969-12-30 | 1972-08-08 | Ibm | Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby |
-
1973
- 1973-06-29 US US375278A patent/US3871067A/en not_active Expired - Lifetime
-
1974
- 1974-04-24 GB GB1799074A patent/GB1424959A/en not_active Expired
- 1974-05-08 DE DE2422120A patent/DE2422120C3/de not_active Expired
- 1974-05-15 IT IT22719/74A patent/IT1012364B/it active
- 1974-05-15 FR FR7417747A patent/FR2235483B1/fr not_active Expired
- 1974-05-17 JP JP5462774A patent/JPS5324300B2/ja not_active Expired
- 1974-06-12 CA CA202,285A patent/CA1007763A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2235483A1 (it) | 1975-01-24 |
JPS5024080A (it) | 1975-03-14 |
US3871067A (en) | 1975-03-18 |
DE2422120B2 (de) | 1981-07-02 |
JPS5324300B2 (it) | 1978-07-20 |
DE2422120A1 (de) | 1975-01-23 |
GB1424959A (en) | 1976-02-11 |
CA1007763A (en) | 1977-03-29 |
DE2422120C3 (de) | 1982-03-25 |
FR2235483B1 (it) | 1978-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1063768B (it) | Procedimento perfezionato per la fabbricazione di dispositivi semiconduttori | |
IT1032591B (it) | Procedimento per la fabbricazione di dispostivi semiconduttori | |
IT1007685B (it) | Procedimento per la produzione di dispositivi semiconduttori | |
IT1106505B (it) | Procedimento per la fabbricazione di dispositivi semiconduttori | |
IT1037478B (it) | Procedimento per la fabbricazione di dispositivo semiconduttori | |
IT1015231B (it) | Procedimento per la fabbricazione di polieterimmidi | |
IT956495B (it) | Metodo perfezionato per la fabbri cazione di dispositivi semicondut tori | |
IT1071194B (it) | Procedimento per la fabbricazione di dispositivi semiconduttori di memoria | |
IT1012364B (it) | Procedimento perfezionato per la fabbricazione di dispositivi semi conduttori | |
IT1022974B (it) | Processo perfezionato per la fabbricazione di dispositivi semiconduttori | |
IT1025605B (it) | Procedimento per la preparazione di esametil tetralina | |
IT1010166B (it) | Metodo per la fabbricazione di dispositivi semiconduttori | |
IT1026193B (it) | Procedimento per la cloridratazione di silicio elementare | |
IT1048340B (it) | Procedimento per la preparazione di idrossipivaddeide | |
IT1022442B (it) | Procedimento per la preparazione di alchilencarbonati | |
IT1037500B (it) | Procedimento per la fabbricazione di composti carbonilici | |
IT1054435B (it) | Procedimento per la produzione di carbonilaldimminometanfosfonati | |
TR18557A (tr) | Akseptoerlerin imaline mahsus usul | |
IT1036429B (it) | Procedimento per la produzione di dimetisolfossido | |
IT1051692B (it) | Procedimento per la fabbricazione di semiconduttori composti | |
IT1027469B (it) | Procedimento per lapreparazione di solfonil semicarbazidi | |
IT1050675B (it) | Procedimento per la produzione di antrachinone | |
IT1047280B (it) | Procedimento per la produzione di polieteri polioli | |
IT1027884B (it) | Procedimento per la preparazione di poliespossidi | |
IT987426B (it) | Procedimento perfezionato per la fabbricazione di dispositivi semi conduttori |