IT1051692B - Procedimento per la fabbricazione di semiconduttori composti - Google Patents

Procedimento per la fabbricazione di semiconduttori composti

Info

Publication number
IT1051692B
IT1051692B IT30634/75A IT3063475A IT1051692B IT 1051692 B IT1051692 B IT 1051692B IT 30634/75 A IT30634/75 A IT 30634/75A IT 3063475 A IT3063475 A IT 3063475A IT 1051692 B IT1051692 B IT 1051692B
Authority
IT
Italy
Prior art keywords
procedure
manufacture
compound semiconductors
semiconductors
compound
Prior art date
Application number
IT30634/75A
Other languages
English (en)
Inventor
B Schaub
J Marine
J Gallet
B Pelliciari
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of IT1051692B publication Critical patent/IT1051692B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Peptides Or Proteins (AREA)
IT30634/75A 1974-12-24 1975-12-22 Procedimento per la fabbricazione di semiconduttori composti IT1051692B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7442769A FR2295792A1 (fr) 1974-12-24 1974-12-24 Procede d'elaboration de semi-conducteurs composes

Publications (1)

Publication Number Publication Date
IT1051692B true IT1051692B (it) 1981-05-20

Family

ID=9146601

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30634/75A IT1051692B (it) 1974-12-24 1975-12-22 Procedimento per la fabbricazione di semiconduttori composti

Country Status (6)

Country Link
US (1) US4003741A (it)
BE (1) BE836441A (it)
CA (1) CA1062996A (it)
FR (1) FR2295792A1 (it)
GB (1) GB1520500A (it)
IT (1) IT1051692B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2051607B (en) * 1979-07-05 1983-06-29 Philips Electronic Associated Method of making monocrystalline ternary semiconductor material
FR2502190A1 (fr) * 1981-03-18 1982-09-24 Telecommunications Sa Procede de preparation de cristaux de hg1-x cdx te
FR2536767A1 (fr) * 1982-11-30 1984-06-01 Commissariat Energie Atomique Procede d'elaboration de composes semi-conducteurs ternaires ou quaternaires
FR2572098B1 (fr) * 1984-10-18 1987-03-06 Commissariat Energie Atomique Procede de fabrication de cristaux de composes au moins ternaires par transfert d'une zone de solvant
US4582683A (en) * 1984-12-03 1986-04-15 Texas Instruments Incorporated (Hg,Cd,Zn)Te crystal compositions
US4690725A (en) * 1985-11-22 1987-09-01 Cominco Ltd. Purification of Cd and Te by zone refining
FR2592028B1 (fr) * 1985-12-20 1990-06-29 Centre Nat Rech Scient Procede d'obtention de lingots d'un tellurure metallique purifie, et lingots obtenus par ce procede
WO1993023882A1 (en) * 1992-05-19 1993-11-25 California Institute Of Technology Wide band-gap semiconductor light emitters
US6043548A (en) * 1993-04-14 2000-03-28 Yeda Research And Development Co., Ltd. Semiconductor device with stabilized junction
CN100508220C (zh) * 2004-04-13 2009-07-01 中国科学院福建物质结构研究所 系列类碲镉汞红外材料及其制备方法和用途
US7537590B2 (en) * 2004-07-30 2009-05-26 Microchips, Inc. Multi-reservoir device for transdermal drug delivery and sensing
CN108707964A (zh) * 2018-04-13 2018-10-26 中国电子科技集团公司第十研究所 用于制备分子束外延束流源料锭的区熔坩埚及料锭

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2829994A (en) * 1955-10-06 1958-04-08 Hughes Aircraft Co Method for preparing silicon-germanium alloys
US3173783A (en) * 1962-07-16 1965-03-16 American Potash & Chem Corp Ternary alkali metal alloy
US3338706A (en) * 1965-03-11 1967-08-29 Westinghouse Electric Corp Metal processing method and resulting product
US3730705A (en) * 1971-03-01 1973-05-01 Koppers Co Inc Method of making leaded-tin bronze alloys

Also Published As

Publication number Publication date
CA1062996A (en) 1979-09-25
US4003741A (en) 1977-01-18
FR2295792B1 (it) 1977-05-20
BE836441A (fr) 1976-04-01
GB1520500A (en) 1978-08-09
FR2295792A1 (fr) 1976-07-23

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