BE836441A - Procede d'elaboration de semi-conducteurs composes - Google Patents

Procede d'elaboration de semi-conducteurs composes

Info

Publication number
BE836441A
BE836441A BE162581A BE162581A BE836441A BE 836441 A BE836441 A BE 836441A BE 162581 A BE162581 A BE 162581A BE 162581 A BE162581 A BE 162581A BE 836441 A BE836441 A BE 836441A
Authority
BE
Belgium
Prior art keywords
preparation
compound semiconductors
semiconductors
compound
Prior art date
Application number
BE162581A
Other languages
English (en)
French (fr)
Inventor
J Gallet
J Marine
B Pelliciari
B Schaub
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE836441A publication Critical patent/BE836441A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Peptides Or Proteins (AREA)
BE162581A 1974-12-24 1975-12-09 Procede d'elaboration de semi-conducteurs composes BE836441A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7442769A FR2295792A1 (fr) 1974-12-24 1974-12-24 Procede d'elaboration de semi-conducteurs composes

Publications (1)

Publication Number Publication Date
BE836441A true BE836441A (fr) 1976-04-01

Family

ID=9146601

Family Applications (1)

Application Number Title Priority Date Filing Date
BE162581A BE836441A (fr) 1974-12-24 1975-12-09 Procede d'elaboration de semi-conducteurs composes

Country Status (6)

Country Link
US (1) US4003741A (it)
BE (1) BE836441A (it)
CA (1) CA1062996A (it)
FR (1) FR2295792A1 (it)
GB (1) GB1520500A (it)
IT (1) IT1051692B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2051607B (en) * 1979-07-05 1983-06-29 Philips Electronic Associated Method of making monocrystalline ternary semiconductor material
FR2502190A1 (fr) * 1981-03-18 1982-09-24 Telecommunications Sa Procede de preparation de cristaux de hg1-x cdx te
FR2536767A1 (fr) * 1982-11-30 1984-06-01 Commissariat Energie Atomique Procede d'elaboration de composes semi-conducteurs ternaires ou quaternaires
FR2572098B1 (fr) * 1984-10-18 1987-03-06 Commissariat Energie Atomique Procede de fabrication de cristaux de composes au moins ternaires par transfert d'une zone de solvant
US4582683A (en) * 1984-12-03 1986-04-15 Texas Instruments Incorporated (Hg,Cd,Zn)Te crystal compositions
US4690725A (en) * 1985-11-22 1987-09-01 Cominco Ltd. Purification of Cd and Te by zone refining
FR2592028B1 (fr) * 1985-12-20 1990-06-29 Centre Nat Rech Scient Procede d'obtention de lingots d'un tellurure metallique purifie, et lingots obtenus par ce procede
WO1993023882A1 (en) * 1992-05-19 1993-11-25 California Institute Of Technology Wide band-gap semiconductor light emitters
US6043548A (en) * 1993-04-14 2000-03-28 Yeda Research And Development Co., Ltd. Semiconductor device with stabilized junction
CN100508220C (zh) * 2004-04-13 2009-07-01 中国科学院福建物质结构研究所 系列类碲镉汞红外材料及其制备方法和用途
WO2006015299A2 (en) * 2004-07-30 2006-02-09 Microchips, Inc. Multi-reservoir device for transdermal drug delivery and sensing
CN108707964A (zh) * 2018-04-13 2018-10-26 中国电子科技集团公司第十研究所 用于制备分子束外延束流源料锭的区熔坩埚及料锭

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2829994A (en) * 1955-10-06 1958-04-08 Hughes Aircraft Co Method for preparing silicon-germanium alloys
US3173783A (en) * 1962-07-16 1965-03-16 American Potash & Chem Corp Ternary alkali metal alloy
US3338706A (en) * 1965-03-11 1967-08-29 Westinghouse Electric Corp Metal processing method and resulting product
US3730705A (en) * 1971-03-01 1973-05-01 Koppers Co Inc Method of making leaded-tin bronze alloys

Also Published As

Publication number Publication date
FR2295792B1 (it) 1977-05-20
GB1520500A (en) 1978-08-09
US4003741A (en) 1977-01-18
FR2295792A1 (fr) 1976-07-23
CA1062996A (en) 1979-09-25
IT1051692B (it) 1981-05-20

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: COMMISSARIAT A L ENERGIE ATOMIQUE

Effective date: 19901231