IT1063768B - Procedimento perfezionato per la fabbricazione di dispositivi semiconduttori - Google Patents

Procedimento perfezionato per la fabbricazione di dispositivi semiconduttori

Info

Publication number
IT1063768B
IT1063768B IT24435/76A IT2443576A IT1063768B IT 1063768 B IT1063768 B IT 1063768B IT 24435/76 A IT24435/76 A IT 24435/76A IT 2443576 A IT2443576 A IT 2443576A IT 1063768 B IT1063768 B IT 1063768B
Authority
IT
Italy
Prior art keywords
manufacture
semiconductive devices
process perfected
perfected
semiconductive
Prior art date
Application number
IT24435/76A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1063768B publication Critical patent/IT1063768B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
IT24435/76A 1975-08-07 1976-06-18 Procedimento perfezionato per la fabbricazione di dispositivi semiconduttori IT1063768B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/602,710 US4053925A (en) 1975-08-07 1975-08-07 Method and structure for controllng carrier lifetime in semiconductor devices

Publications (1)

Publication Number Publication Date
IT1063768B true IT1063768B (it) 1985-02-11

Family

ID=24412483

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24435/76A IT1063768B (it) 1975-08-07 1976-06-18 Procedimento perfezionato per la fabbricazione di dispositivi semiconduttori

Country Status (14)

Country Link
US (1) US4053925A (it)
JP (2) JPS5221775A (it)
AU (1) AU501673B2 (it)
BE (1) BE843794A (it)
CA (1) CA1048653A (it)
CH (1) CH600571A5 (it)
DE (1) DE2634500A1 (it)
ES (1) ES450165A1 (it)
FR (1) FR2320636A1 (it)
GB (1) GB1492367A (it)
IT (1) IT1063768B (it)
NL (1) NL7608644A (it)
SE (1) SE415062B (it)
ZA (1) ZA764477B (it)

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US4276555A (en) * 1978-07-13 1981-06-30 International Business Machines Corporation Controlled avalanche voltage transistor and magnetic sensor
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US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
US4291329A (en) * 1979-08-31 1981-09-22 Westinghouse Electric Corp. Thyristor with continuous recombination center shunt across planar emitter-base junction
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
US4318750A (en) * 1979-12-28 1982-03-09 Westinghouse Electric Corp. Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects
JPS56135960A (en) * 1980-03-28 1981-10-23 Nec Corp Semiconductor ic device
US4300152A (en) * 1980-04-07 1981-11-10 Bell Telephone Laboratories, Incorporated Complementary field-effect transistor integrated circuit device
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
JPS5814538A (ja) * 1981-07-17 1983-01-27 Fujitsu Ltd 半導体装置の製造方法
US4412868A (en) * 1981-12-23 1983-11-01 General Electric Company Method of making integrated circuits utilizing ion implantation and selective epitaxial growth
FR2534415A1 (fr) * 1982-10-07 1984-04-13 Cii Honeywell Bull Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant
US4716451A (en) * 1982-12-10 1987-12-29 Rca Corporation Semiconductor device with internal gettering region
JPS6031232A (ja) * 1983-07-29 1985-02-18 Toshiba Corp 半導体基体の製造方法
US4633289A (en) * 1983-09-12 1986-12-30 Hughes Aircraft Company Latch-up immune, multiple retrograde well high density CMOS FET
US4710477A (en) * 1983-09-12 1987-12-01 Hughes Aircraft Company Method for forming latch-up immune, multiple retrograde well high density CMOS FET
GB2171555A (en) * 1985-02-20 1986-08-28 Philips Electronic Associated Bipolar semiconductor device with implanted recombination region
JPS61264751A (ja) * 1985-05-17 1986-11-22 Nippon Telegr & Teleph Corp <Ntt> 相補性ｍｉｓ型電界効果トランジスタ装置
US4689667A (en) * 1985-06-11 1987-08-25 Fairchild Semiconductor Corporation Method of controlling dopant diffusion and dopant electrical activation by implanted inert gas atoms
US4806498A (en) * 1985-06-21 1989-02-21 Texas Instruments Incorporated Semiconductor charge-coupled device and process of fabrication thereof
US4701775A (en) * 1985-10-21 1987-10-20 Motorola, Inc. Buried n- channel implant for NMOS transistors
JPS62219636A (ja) * 1986-03-20 1987-09-26 Hitachi Ltd 半導体装置
JPS63254762A (ja) * 1987-04-13 1988-10-21 Nissan Motor Co Ltd Ｃｍｏｓ半導体装置
JPH0821678B2 (ja) * 1987-05-29 1996-03-04 日産自動車株式会社 半導体装置
US4881107A (en) * 1987-07-03 1989-11-14 Nissan Motor Company, Ltd. IC device having a vertical MOSFET and an auxiliary component
US5102810A (en) * 1990-03-13 1992-04-07 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5554883A (en) * 1990-04-28 1996-09-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method therefor
JPH05198666A (ja) * 1991-11-20 1993-08-06 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5384477A (en) * 1993-03-09 1995-01-24 National Semiconductor Corporation CMOS latchup suppression by localized minority carrier lifetime reduction
US5358879A (en) * 1993-04-30 1994-10-25 Loral Federal Systems Company Method of making gate overlapped lightly doped drain for buried channel devices
JPH09502303A (ja) * 1993-09-03 1997-03-04 ナショナル・セミコンダクター・コーポレイション マイクロエレクトロニクスの製造に使用するための平坦な分離方法
JP3135762B2 (ja) * 1993-10-29 2001-02-19 株式会社東芝 半導体集積回路装置
US5508211A (en) * 1994-02-17 1996-04-16 Lsi Logic Corporation Method of making integrated circuit structure with vertical isolation from single crystal substrate comprising isolation layer formed by implantation and annealing of noble gas atoms in substrate
JPH07335870A (ja) * 1994-06-14 1995-12-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
EP0694960B1 (en) * 1994-07-25 2002-07-03 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Process for the localized reduction of the lifetime of charge carriers
US5747371A (en) * 1996-07-22 1998-05-05 Motorola, Inc. Method of manufacturing vertical MOSFET
US6410409B1 (en) * 1996-10-31 2002-06-25 Advanced Micro Devices, Inc. Implanted barrier layer for retarding upward diffusion of substrate dopant
US6455903B1 (en) * 2000-01-26 2002-09-24 Advanced Micro Devices, Inc. Dual threshold voltage MOSFET by local confinement of channel depletion layer using inert ion implantation
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US6836134B2 (en) * 2002-06-11 2004-12-28 Delphi Technologies, Inc. Apparatus and method for determining leakage current between a first semiconductor region and a second semiconductor region to be formed therein
DE10261307B4 (de) * 2002-12-27 2010-11-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Spannungsoberflächenschicht in einem Halbleiterelement
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Also Published As

Publication number Publication date
US4053925A (en) 1977-10-11
SE415062B (sv) 1980-09-01
AU501673B2 (en) 1979-06-28
BE843794A (fr) 1976-11-03
ZA764477B (en) 1978-03-29
CH600571A5 (it) 1978-06-15
CA1048653A (en) 1979-02-13
JPS5221775A (en) 1977-02-18
DE2634500A1 (de) 1977-02-17
GB1492367A (en) 1977-11-16
SE7608635L (sv) 1977-02-08
JPS5942464B2 (ja) 1984-10-15
JPS57118667A (en) 1982-07-23
NL7608644A (nl) 1977-02-09
FR2320636A1 (fr) 1977-03-04
FR2320636B1 (it) 1978-05-19
AU1665476A (en) 1978-02-09
JPS5723425B2 (it) 1982-05-18
ES450165A1 (es) 1977-06-16

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