FR2320636A1 - Procede pour reduire la duree de vie des porteurs minoritaires dans les semi-conducteurs et dispositifs en resultant - Google Patents
Procede pour reduire la duree de vie des porteurs minoritaires dans les semi-conducteurs et dispositifs en resultantInfo
- Publication number
- FR2320636A1 FR2320636A1 FR7619836A FR7619836A FR2320636A1 FR 2320636 A1 FR2320636 A1 FR 2320636A1 FR 7619836 A FR7619836 A FR 7619836A FR 7619836 A FR7619836 A FR 7619836A FR 2320636 A1 FR2320636 A1 FR 2320636A1
- Authority
- FR
- France
- Prior art keywords
- semiconductors
- lifetime
- reducing
- resulting devices
- minority
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/024—Defect control-gettering and annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/602,710 US4053925A (en) | 1975-08-07 | 1975-08-07 | Method and structure for controllng carrier lifetime in semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2320636A1 true FR2320636A1 (fr) | 1977-03-04 |
FR2320636B1 FR2320636B1 (fr) | 1978-05-19 |
Family
ID=24412483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7619836A Granted FR2320636A1 (fr) | 1975-08-07 | 1976-06-24 | Procede pour reduire la duree de vie des porteurs minoritaires dans les semi-conducteurs et dispositifs en resultant |
Country Status (14)
Country | Link |
---|---|
US (1) | US4053925A (fr) |
JP (2) | JPS5221775A (fr) |
AU (1) | AU501673B2 (fr) |
BE (1) | BE843794A (fr) |
CA (1) | CA1048653A (fr) |
CH (1) | CH600571A5 (fr) |
DE (1) | DE2634500A1 (fr) |
ES (1) | ES450165A1 (fr) |
FR (1) | FR2320636A1 (fr) |
GB (1) | GB1492367A (fr) |
IT (1) | IT1063768B (fr) |
NL (1) | NL7608644A (fr) |
SE (1) | SE415062B (fr) |
ZA (1) | ZA764477B (fr) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0024657A2 (fr) * | 1979-08-31 | 1981-03-11 | Westinghouse Electric Corporation | Thyristor à shunt d'émetteur continu |
WO1985001391A1 (fr) * | 1983-09-12 | 1985-03-28 | Hughes Aircraft Company | Transistor a effet de champ cmos de densite elevee a puits retrograde multiple, immun au verrouillage |
EP0253059A2 (fr) * | 1986-03-20 | 1988-01-20 | Hitachi, Ltd. | Procédé pour supprimer la montée de la couche enterrée d'un dispositif semi-conducteur |
EP0292972A2 (fr) * | 1987-05-29 | 1988-11-30 | Nissan Motor Co., Ltd. | Circuit intégré comportant une couche de recombinaison et un anneau de garde séparant des VDMOS et CMOS ou analogues |
WO1995006956A1 (fr) * | 1993-09-03 | 1995-03-09 | National Semiconductor Corporation | Procede d'isolement planar apte a etre utilise dans l'industrie de la microelectronique |
EP0651442A1 (fr) * | 1993-10-29 | 1995-05-03 | Kabushiki Kaisha Toshiba | Dispositif de puissance intelligent |
EP0694960A1 (fr) * | 1994-07-25 | 1996-01-31 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Procédé pour la réduction localisée de la durée de vie des porteuse de charge |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1559583A (en) * | 1975-07-18 | 1980-01-23 | Tokyo Shibaura Electric Co | Complementary mosfet device and method of manufacturing the same |
GB1580977A (en) * | 1976-05-31 | 1980-12-10 | Siemens Ag | Schottkytransisitor-logic arrangements |
JPS5410686A (en) * | 1977-06-25 | 1979-01-26 | Mitsubishi Electric Corp | Semiconductor device and its production |
JPS5420676A (en) * | 1977-07-15 | 1979-02-16 | Mitsubishi Electric Corp | Production of semiconductor heat-sensitive switching elements |
US4193079A (en) * | 1978-01-30 | 1980-03-11 | Xerox Corporation | MESFET with non-uniform doping |
US4276555A (en) * | 1978-07-13 | 1981-06-30 | International Business Machines Corporation | Controlled avalanche voltage transistor and magnetic sensor |
JPS5939904B2 (ja) * | 1978-09-28 | 1984-09-27 | 株式会社東芝 | 半導体装置 |
US4274105A (en) * | 1978-12-29 | 1981-06-16 | International Business Machines Corporation | MOSFET Substrate sensitivity control |
US4249962A (en) * | 1979-09-11 | 1981-02-10 | Western Electric Company, Inc. | Method of removing contaminating impurities from device areas in a semiconductor wafer |
US4318750A (en) * | 1979-12-28 | 1982-03-09 | Westinghouse Electric Corp. | Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects |
JPS56135960A (en) * | 1980-03-28 | 1981-10-23 | Nec Corp | Semiconductor ic device |
US4300152A (en) * | 1980-04-07 | 1981-11-10 | Bell Telephone Laboratories, Incorporated | Complementary field-effect transistor integrated circuit device |
US4432008A (en) * | 1980-07-21 | 1984-02-14 | The Board Of Trustees Of The Leland Stanford Junior University | Gold-doped IC resistor region |
JPS5814538A (ja) * | 1981-07-17 | 1983-01-27 | Fujitsu Ltd | 半導体装置の製造方法 |
US4412868A (en) * | 1981-12-23 | 1983-11-01 | General Electric Company | Method of making integrated circuits utilizing ion implantation and selective epitaxial growth |
FR2534415A1 (fr) * | 1982-10-07 | 1984-04-13 | Cii Honeywell Bull | Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant |
US4716451A (en) * | 1982-12-10 | 1987-12-29 | Rca Corporation | Semiconductor device with internal gettering region |
JPS6031232A (ja) * | 1983-07-29 | 1985-02-18 | Toshiba Corp | 半導体基体の製造方法 |
US4710477A (en) * | 1983-09-12 | 1987-12-01 | Hughes Aircraft Company | Method for forming latch-up immune, multiple retrograde well high density CMOS FET |
GB2171555A (en) * | 1985-02-20 | 1986-08-28 | Philips Electronic Associated | Bipolar semiconductor device with implanted recombination region |
JPS61264751A (ja) * | 1985-05-17 | 1986-11-22 | Nippon Telegr & Teleph Corp <Ntt> | 相補性mis型電界効果トランジスタ装置 |
US4689667A (en) * | 1985-06-11 | 1987-08-25 | Fairchild Semiconductor Corporation | Method of controlling dopant diffusion and dopant electrical activation by implanted inert gas atoms |
US4806498A (en) * | 1985-06-21 | 1989-02-21 | Texas Instruments Incorporated | Semiconductor charge-coupled device and process of fabrication thereof |
US4701775A (en) * | 1985-10-21 | 1987-10-20 | Motorola, Inc. | Buried n- channel implant for NMOS transistors |
JPS63254762A (ja) * | 1987-04-13 | 1988-10-21 | Nissan Motor Co Ltd | Cmos半導体装置 |
US4881107A (en) * | 1987-07-03 | 1989-11-14 | Nissan Motor Company, Ltd. | IC device having a vertical MOSFET and an auxiliary component |
US5097308A (en) * | 1990-03-13 | 1992-03-17 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
US5102810A (en) * | 1990-03-13 | 1992-04-07 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
US5554883A (en) * | 1990-04-28 | 1996-09-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method therefor |
JPH05198666A (ja) * | 1991-11-20 | 1993-08-06 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5384477A (en) * | 1993-03-09 | 1995-01-24 | National Semiconductor Corporation | CMOS latchup suppression by localized minority carrier lifetime reduction |
US5358879A (en) * | 1993-04-30 | 1994-10-25 | Loral Federal Systems Company | Method of making gate overlapped lightly doped drain for buried channel devices |
US5508211A (en) * | 1994-02-17 | 1996-04-16 | Lsi Logic Corporation | Method of making integrated circuit structure with vertical isolation from single crystal substrate comprising isolation layer formed by implantation and annealing of noble gas atoms in substrate |
JPH07335870A (ja) * | 1994-06-14 | 1995-12-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5747371A (en) * | 1996-07-22 | 1998-05-05 | Motorola, Inc. | Method of manufacturing vertical MOSFET |
US6410409B1 (en) * | 1996-10-31 | 2002-06-25 | Advanced Micro Devices, Inc. | Implanted barrier layer for retarding upward diffusion of substrate dopant |
US6455903B1 (en) * | 2000-01-26 | 2002-09-24 | Advanced Micro Devices, Inc. | Dual threshold voltage MOSFET by local confinement of channel depletion layer using inert ion implantation |
DE10061191A1 (de) * | 2000-12-08 | 2002-06-13 | Ihp Gmbh | Schichten in Substratscheiben |
US20040176483A1 (en) * | 2003-03-05 | 2004-09-09 | Micron Technology, Inc. | Cellular materials formed using surface transformation |
US6836134B2 (en) * | 2002-06-11 | 2004-12-28 | Delphi Technologies, Inc. | Apparatus and method for determining leakage current between a first semiconductor region and a second semiconductor region to be formed therein |
DE10261307B4 (de) * | 2002-12-27 | 2010-11-11 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung einer Spannungsoberflächenschicht in einem Halbleiterelement |
US7662701B2 (en) * | 2003-05-21 | 2010-02-16 | Micron Technology, Inc. | Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers |
US7501329B2 (en) * | 2003-05-21 | 2009-03-10 | Micron Technology, Inc. | Wafer gettering using relaxed silicon germanium epitaxial proximity layers |
US6929984B2 (en) * | 2003-07-21 | 2005-08-16 | Micron Technology Inc. | Gettering using voids formed by surface transformation |
US7550787B2 (en) * | 2005-05-31 | 2009-06-23 | International Business Machines Corporation | Varied impurity profile region formation for varying breakdown voltage of devices |
US8552616B2 (en) * | 2005-10-25 | 2013-10-08 | The Curators Of The University Of Missouri | Micro-scale power source |
WO2010024433A1 (fr) | 2008-09-01 | 2010-03-04 | ローム株式会社 | Dispositif semi-conducteur et son procédé de fabrication |
JP2014090072A (ja) * | 2012-10-30 | 2014-05-15 | Fuji Electric Co Ltd | 逆阻止mos型半導体装置及びその製造方法 |
DE102017130355A1 (de) * | 2017-12-18 | 2019-06-19 | Infineon Technologies Ag | Ein Halbleiterbauelement und ein Verfahren zum Bilden eines Halbleiterbauelements |
US10651281B1 (en) * | 2018-12-03 | 2020-05-12 | Globalfoundries Inc. | Substrates with self-aligned buried dielectric and polycrystalline layers |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3663308A (en) * | 1970-11-05 | 1972-05-16 | Us Navy | Method of making ion implanted dielectric enclosures |
FR2147016A1 (fr) * | 1971-07-27 | 1973-03-09 | Philips Nv | |
US3736192A (en) * | 1968-12-04 | 1973-05-29 | Hitachi Ltd | Integrated circuit and method of making the same |
US3773566A (en) * | 1970-02-09 | 1973-11-20 | Hitachi Ltd | Method for fabricating semiconductor device having semiconductor circuit element in isolated semiconductor region |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3502515A (en) * | 1964-09-28 | 1970-03-24 | Philco Ford Corp | Method of fabricating semiconductor device which includes region in which minority carriers have short lifetime |
US3645808A (en) * | 1967-07-31 | 1972-02-29 | Hitachi Ltd | Method for fabricating a semiconductor-integrated circuit |
US3796929A (en) * | 1970-12-09 | 1974-03-12 | Philips Nv | Junction isolated integrated circuit resistor with crystal damage near isolation junction |
US3897273A (en) * | 1972-11-06 | 1975-07-29 | Hughes Aircraft Co | Process for forming electrically isolating high resistivity regions in GaAs |
US3888701A (en) * | 1973-03-09 | 1975-06-10 | Westinghouse Electric Corp | Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing |
-
1975
- 1975-08-07 US US05/602,710 patent/US4053925A/en not_active Expired - Lifetime
-
1976
- 1976-06-18 IT IT24435/76A patent/IT1063768B/it active
- 1976-06-21 CH CH787876A patent/CH600571A5/xx not_active IP Right Cessation
- 1976-06-24 FR FR7619836A patent/FR2320636A1/fr active Granted
- 1976-07-05 BE BE168641A patent/BE843794A/fr not_active IP Right Cessation
- 1976-07-20 JP JP51085686A patent/JPS5221775A/ja active Granted
- 1976-07-26 ES ES450165A patent/ES450165A1/es not_active Expired
- 1976-07-26 ZA ZA00764477A patent/ZA764477B/xx unknown
- 1976-07-29 GB GB31671/76A patent/GB1492367A/en not_active Expired
- 1976-07-30 SE SE7608635A patent/SE415062B/xx unknown
- 1976-07-31 DE DE19762634500 patent/DE2634500A1/de not_active Ceased
- 1976-08-04 NL NL7608644A patent/NL7608644A/xx not_active Application Discontinuation
- 1976-08-06 AU AU16654/76A patent/AU501673B2/en not_active Expired
- 1976-08-06 CA CA76258550A patent/CA1048653A/fr not_active Expired
-
1981
- 1981-12-01 JP JP56191905A patent/JPS5942464B2/ja not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3736192A (en) * | 1968-12-04 | 1973-05-29 | Hitachi Ltd | Integrated circuit and method of making the same |
US3773566A (en) * | 1970-02-09 | 1973-11-20 | Hitachi Ltd | Method for fabricating semiconductor device having semiconductor circuit element in isolated semiconductor region |
US3663308A (en) * | 1970-11-05 | 1972-05-16 | Us Navy | Method of making ion implanted dielectric enclosures |
FR2147016A1 (fr) * | 1971-07-27 | 1973-03-09 | Philips Nv |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0024657A3 (en) * | 1979-08-31 | 1983-05-04 | Westinghouse Electric Corporation | Thyristor with continuous emitter shunt |
EP0024657A2 (fr) * | 1979-08-31 | 1981-03-11 | Westinghouse Electric Corporation | Thyristor à shunt d'émetteur continu |
WO1985001391A1 (fr) * | 1983-09-12 | 1985-03-28 | Hughes Aircraft Company | Transistor a effet de champ cmos de densite elevee a puits retrograde multiple, immun au verrouillage |
EP0253059A3 (fr) * | 1986-03-20 | 1989-09-13 | Hitachi, Ltd. | Procédé pour supprimer la montée de la couche enterrée d'un dispositif semi-conducteur |
EP0253059A2 (fr) * | 1986-03-20 | 1988-01-20 | Hitachi, Ltd. | Procédé pour supprimer la montée de la couche enterrée d'un dispositif semi-conducteur |
EP0292972A3 (fr) * | 1987-05-29 | 1989-11-23 | Nissan Motor Co., Ltd. | Circuit intégré comportant une couche de recombinaison et un anneau de garde séparant des VDMOS et CMOS ou analogues |
EP0292972A2 (fr) * | 1987-05-29 | 1988-11-30 | Nissan Motor Co., Ltd. | Circuit intégré comportant une couche de recombinaison et un anneau de garde séparant des VDMOS et CMOS ou analogues |
WO1995006956A1 (fr) * | 1993-09-03 | 1995-03-09 | National Semiconductor Corporation | Procede d'isolement planar apte a etre utilise dans l'industrie de la microelectronique |
EP0651442A1 (fr) * | 1993-10-29 | 1995-05-03 | Kabushiki Kaisha Toshiba | Dispositif de puissance intelligent |
US5512777A (en) * | 1993-10-29 | 1996-04-30 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device having elements of different switching speeds integrated on a single chip |
EP0694960A1 (fr) * | 1994-07-25 | 1996-01-31 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Procédé pour la réduction localisée de la durée de vie des porteuse de charge |
US5900652A (en) * | 1994-07-25 | 1999-05-04 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices |
US6168981B1 (en) | 1994-07-25 | 2001-01-02 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices |
Also Published As
Publication number | Publication date |
---|---|
DE2634500A1 (de) | 1977-02-17 |
CA1048653A (fr) | 1979-02-13 |
AU501673B2 (en) | 1979-06-28 |
CH600571A5 (fr) | 1978-06-15 |
JPS57118667A (en) | 1982-07-23 |
SE415062B (sv) | 1980-09-01 |
NL7608644A (nl) | 1977-02-09 |
JPS5221775A (en) | 1977-02-18 |
ES450165A1 (es) | 1977-06-16 |
BE843794A (fr) | 1976-11-03 |
SE7608635L (sv) | 1977-02-08 |
JPS5723425B2 (fr) | 1982-05-18 |
FR2320636B1 (fr) | 1978-05-19 |
JPS5942464B2 (ja) | 1984-10-15 |
IT1063768B (it) | 1985-02-11 |
AU1665476A (en) | 1978-02-09 |
GB1492367A (en) | 1977-11-16 |
ZA764477B (en) | 1978-03-29 |
US4053925A (en) | 1977-10-11 |
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