ES450165A1 - Dispositivo semiconductor integrado. - Google Patents

Dispositivo semiconductor integrado.

Info

Publication number
ES450165A1
ES450165A1 ES450165A ES450165A ES450165A1 ES 450165 A1 ES450165 A1 ES 450165A1 ES 450165 A ES450165 A ES 450165A ES 450165 A ES450165 A ES 450165A ES 450165 A1 ES450165 A1 ES 450165A1
Authority
ES
Spain
Prior art keywords
controllng
semiconductor devices
carrier lifetime
igfets
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES450165A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES450165A1 publication Critical patent/ES450165A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
ES450165A 1975-08-07 1976-07-26 Dispositivo semiconductor integrado. Expired ES450165A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/602,710 US4053925A (en) 1975-08-07 1975-08-07 Method and structure for controllng carrier lifetime in semiconductor devices

Publications (1)

Publication Number Publication Date
ES450165A1 true ES450165A1 (es) 1977-06-16

Family

ID=24412483

Family Applications (1)

Application Number Title Priority Date Filing Date
ES450165A Expired ES450165A1 (es) 1975-08-07 1976-07-26 Dispositivo semiconductor integrado.

Country Status (14)

Country Link
US (1) US4053925A (es)
JP (2) JPS5221775A (es)
AU (1) AU501673B2 (es)
BE (1) BE843794A (es)
CA (1) CA1048653A (es)
CH (1) CH600571A5 (es)
DE (1) DE2634500A1 (es)
ES (1) ES450165A1 (es)
FR (1) FR2320636A1 (es)
GB (1) GB1492367A (es)
IT (1) IT1063768B (es)
NL (1) NL7608644A (es)
SE (1) SE415062B (es)
ZA (1) ZA764477B (es)

Families Citing this family (57)

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GB1559583A (en) * 1975-07-18 1980-01-23 Tokyo Shibaura Electric Co Complementary mosfet device and method of manufacturing the same
GB1580977A (en) * 1976-05-31 1980-12-10 Siemens Ag Schottkytransisitor-logic arrangements
JPS5410686A (en) * 1977-06-25 1979-01-26 Mitsubishi Electric Corp Semiconductor device and its production
JPS5420676A (en) * 1977-07-15 1979-02-16 Mitsubishi Electric Corp Production of semiconductor heat-sensitive switching elements
US4193079A (en) * 1978-01-30 1980-03-11 Xerox Corporation MESFET with non-uniform doping
US4276555A (en) * 1978-07-13 1981-06-30 International Business Machines Corporation Controlled avalanche voltage transistor and magnetic sensor
JPS5939904B2 (ja) * 1978-09-28 1984-09-27 株式会社東芝 半導体装置
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
US4291329A (en) * 1979-08-31 1981-09-22 Westinghouse Electric Corp. Thyristor with continuous recombination center shunt across planar emitter-base junction
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
US4318750A (en) * 1979-12-28 1982-03-09 Westinghouse Electric Corp. Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects
JPS56135960A (en) * 1980-03-28 1981-10-23 Nec Corp Semiconductor ic device
US4300152A (en) * 1980-04-07 1981-11-10 Bell Telephone Laboratories, Incorporated Complementary field-effect transistor integrated circuit device
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
JPS5814538A (ja) * 1981-07-17 1983-01-27 Fujitsu Ltd 半導体装置の製造方法
US4412868A (en) * 1981-12-23 1983-11-01 General Electric Company Method of making integrated circuits utilizing ion implantation and selective epitaxial growth
FR2534415A1 (fr) * 1982-10-07 1984-04-13 Cii Honeywell Bull Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant
US4716451A (en) * 1982-12-10 1987-12-29 Rca Corporation Semiconductor device with internal gettering region
JPS6031232A (ja) * 1983-07-29 1985-02-18 Toshiba Corp 半導体基体の製造方法
US4633289A (en) * 1983-09-12 1986-12-30 Hughes Aircraft Company Latch-up immune, multiple retrograde well high density CMOS FET
US4710477A (en) * 1983-09-12 1987-12-01 Hughes Aircraft Company Method for forming latch-up immune, multiple retrograde well high density CMOS FET
GB2171555A (en) * 1985-02-20 1986-08-28 Philips Electronic Associated Bipolar semiconductor device with implanted recombination region
JPS61264751A (ja) * 1985-05-17 1986-11-22 Nippon Telegr & Teleph Corp <Ntt> 相補性ｍｉｓ型電界効果トランジスタ装置
US4689667A (en) * 1985-06-11 1987-08-25 Fairchild Semiconductor Corporation Method of controlling dopant diffusion and dopant electrical activation by implanted inert gas atoms
US4806498A (en) * 1985-06-21 1989-02-21 Texas Instruments Incorporated Semiconductor charge-coupled device and process of fabrication thereof
US4701775A (en) * 1985-10-21 1987-10-20 Motorola, Inc. Buried n- channel implant for NMOS transistors
JPS62219636A (ja) * 1986-03-20 1987-09-26 Hitachi Ltd 半導体装置
JPS63254762A (ja) * 1987-04-13 1988-10-21 Nissan Motor Co Ltd Ｃｍｏｓ半導体装置
JPH0821678B2 (ja) * 1987-05-29 1996-03-04 日産自動車株式会社 半導体装置
US4881107A (en) * 1987-07-03 1989-11-14 Nissan Motor Company, Ltd. IC device having a vertical MOSFET and an auxiliary component
US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5102810A (en) * 1990-03-13 1992-04-07 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5554883A (en) * 1990-04-28 1996-09-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method therefor
JPH05198666A (ja) * 1991-11-20 1993-08-06 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5384477A (en) * 1993-03-09 1995-01-24 National Semiconductor Corporation CMOS latchup suppression by localized minority carrier lifetime reduction
US5358879A (en) * 1993-04-30 1994-10-25 Loral Federal Systems Company Method of making gate overlapped lightly doped drain for buried channel devices
JPH09502303A (ja) * 1993-09-03 1997-03-04 ナショナル・セミコンダクター・コーポレイション マイクロエレクトロニクスの製造に使用するための平坦な分離方法
JP3135762B2 (ja) * 1993-10-29 2001-02-19 株式会社東芝 半導体集積回路装置
US5508211A (en) * 1994-02-17 1996-04-16 Lsi Logic Corporation Method of making integrated circuit structure with vertical isolation from single crystal substrate comprising isolation layer formed by implantation and annealing of noble gas atoms in substrate
JPH07335870A (ja) * 1994-06-14 1995-12-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
EP0694960B1 (en) * 1994-07-25 2002-07-03 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Process for the localized reduction of the lifetime of charge carriers
US5747371A (en) * 1996-07-22 1998-05-05 Motorola, Inc. Method of manufacturing vertical MOSFET
US6410409B1 (en) * 1996-10-31 2002-06-25 Advanced Micro Devices, Inc. Implanted barrier layer for retarding upward diffusion of substrate dopant
US6455903B1 (en) * 2000-01-26 2002-09-24 Advanced Micro Devices, Inc. Dual threshold voltage MOSFET by local confinement of channel depletion layer using inert ion implantation
DE10061191A1 (de) * 2000-12-08 2002-06-13 Ihp Gmbh Schichten in Substratscheiben
US20040176483A1 (en) * 2003-03-05 2004-09-09 Micron Technology, Inc. Cellular materials formed using surface transformation
US6836134B2 (en) * 2002-06-11 2004-12-28 Delphi Technologies, Inc. Apparatus and method for determining leakage current between a first semiconductor region and a second semiconductor region to be formed therein
DE10261307B4 (de) * 2002-12-27 2010-11-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Spannungsoberflächenschicht in einem Halbleiterelement
US7662701B2 (en) * 2003-05-21 2010-02-16 Micron Technology, Inc. Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers
US7501329B2 (en) * 2003-05-21 2009-03-10 Micron Technology, Inc. Wafer gettering using relaxed silicon germanium epitaxial proximity layers
US6929984B2 (en) * 2003-07-21 2005-08-16 Micron Technology Inc. Gettering using voids formed by surface transformation
US7550787B2 (en) * 2005-05-31 2009-06-23 International Business Machines Corporation Varied impurity profile region formation for varying breakdown voltage of devices
US8552616B2 (en) * 2005-10-25 2013-10-08 The Curators Of The University Of Missouri Micro-scale power source
KR101614565B1 (ko) 2008-09-01 2016-04-21 로무 가부시키가이샤 반도체 장치 및 그 제조 방법
JP2014090072A (ja) * 2012-10-30 2014-05-15 Fuji Electric Co Ltd 逆阻止ｍｏｓ型半導体装置及びその製造方法
DE102017130355A1 (de) * 2017-12-18 2019-06-19 Infineon Technologies Ag Ein Halbleiterbauelement und ein Verfahren zum Bilden eines Halbleiterbauelements
US10651281B1 (en) * 2018-12-03 2020-05-12 Globalfoundries Inc. Substrates with self-aligned buried dielectric and polycrystalline layers

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US3502515A (en) * 1964-09-28 1970-03-24 Philco Ford Corp Method of fabricating semiconductor device which includes region in which minority carriers have short lifetime
US3645808A (en) * 1967-07-31 1972-02-29 Hitachi Ltd Method for fabricating a semiconductor-integrated circuit
JPS4837232B1 (es) * 1968-12-04 1973-11-09
JPS5012995B1 (es) * 1970-02-09 1975-05-16
US3663308A (en) * 1970-11-05 1972-05-16 Us Navy Method of making ion implanted dielectric enclosures
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US3897273A (en) * 1972-11-06 1975-07-29 Hughes Aircraft Co Process for forming electrically isolating high resistivity regions in GaAs
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing

Also Published As

Publication number Publication date
NL7608644A (nl) 1977-02-09
IT1063768B (it) 1985-02-11
GB1492367A (en) 1977-11-16
JPS57118667A (en) 1982-07-23
AU501673B2 (en) 1979-06-28
CH600571A5 (es) 1978-06-15
SE415062B (sv) 1980-09-01
FR2320636A1 (fr) 1977-03-04
JPS5942464B2 (ja) 1984-10-15
ZA764477B (en) 1978-03-29
DE2634500A1 (de) 1977-02-17
SE7608635L (sv) 1977-02-08
FR2320636B1 (es) 1978-05-19
BE843794A (fr) 1976-11-03
AU1665476A (en) 1978-02-09
US4053925A (en) 1977-10-11
JPS5221775A (en) 1977-02-18
JPS5723425B2 (es) 1982-05-18
CA1048653A (en) 1979-02-13

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19980302