GB1443999A - Metal oxide semiconductor field effect transistors - Google Patents

Metal oxide semiconductor field effect transistors

Info

Publication number
GB1443999A
GB1443999A GB5939073A GB5939073A GB1443999A GB 1443999 A GB1443999 A GB 1443999A GB 5939073 A GB5939073 A GB 5939073A GB 5939073 A GB5939073 A GB 5939073A GB 1443999 A GB1443999 A GB 1443999A
Authority
GB
United Kingdom
Prior art keywords
metal oxide
oxide semiconductor
field effect
providing
effect transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5939073A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intersil Corp
Original Assignee
Intersil Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intersil Inc filed Critical Intersil Inc
Publication of GB1443999A publication Critical patent/GB1443999A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

1443999 Semi-conductor devices INTERSIL Inc 21 Dec 1973 [12 April 1973] 59390/73 Heading H1K A CMOS comprises an N epitaxial layer 52 on an N-substrate 51, a buried P+ region 53 extending beneath an entire P- well region 56, N+ channels 57-60 providing N channel source and drain regions and having a metalover-silicon gate connection 63, P+ channels 66-69 in the epitaxial layer 52 providing P channel source and drain regions and having a metal-over-silicon gate connection 73, and a body contact B. The P+ region 53 inhibits SCR action by providing short-lived minority carriers.
GB5939073A 1973-04-12 1973-12-21 Metal oxide semiconductor field effect transistors Expired GB1443999A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35058773A 1973-04-12 1973-04-12

Publications (1)

Publication Number Publication Date
GB1443999A true GB1443999A (en) 1976-07-28

Family

ID=23377367

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5939073A Expired GB1443999A (en) 1973-04-12 1973-12-21 Metal oxide semiconductor field effect transistors

Country Status (7)

Country Link
JP (1) JPS503585A (en)
CA (1) CA997869A (en)
DE (1) DE2415736A1 (en)
FR (1) FR2225844B1 (en)
GB (1) GB1443999A (en)
IT (1) IT1008753B (en)
NL (1) NL7317176A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0057563A2 (en) * 1981-02-04 1982-08-11 Western Electric Company, Incorporated Semiconductor integrated circuit
DE3316680A1 (en) * 1982-05-06 1983-11-10 Mitsubishi Denki K.K., Tokyo Integrated CMOS circuit with increased resistance to the latch-up effect
GB2128024A (en) * 1982-09-24 1984-04-18 Hitachi Ltd Method of manufacturing semiconductor integrated circuit device
EP0193172A2 (en) * 1985-02-26 1986-09-03 Nissan Motor Co., Ltd. Vertical MOS transistor with peripheral circuit

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558019A (en) * 1978-06-30 1980-01-21 Nec Corp Semiconductor device
JPS60207368A (en) * 1984-03-31 1985-10-18 Res Dev Corp Of Japan Manufacture of complementary type mos integrated circuit
JPS60250664A (en) * 1984-05-26 1985-12-11 Toshiba Corp Semiconductor integrated circuit device and manufacture thereof
JPS6386555A (en) * 1986-09-30 1988-04-16 Toshiba Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0057563A2 (en) * 1981-02-04 1982-08-11 Western Electric Company, Incorporated Semiconductor integrated circuit
EP0057563A3 (en) * 1981-02-04 1983-01-26 Western Electric Company, Incorporated Semiconductor integrated circuit
DE3316680A1 (en) * 1982-05-06 1983-11-10 Mitsubishi Denki K.K., Tokyo Integrated CMOS circuit with increased resistance to the latch-up effect
GB2128024A (en) * 1982-09-24 1984-04-18 Hitachi Ltd Method of manufacturing semiconductor integrated circuit device
EP0193172A2 (en) * 1985-02-26 1986-09-03 Nissan Motor Co., Ltd. Vertical MOS transistor with peripheral circuit
EP0193172A3 (en) * 1985-02-26 1987-08-19 Nissan Motor Co., Ltd. Vertical mos transistor with peripheral circuit

Also Published As

Publication number Publication date
DE2415736A1 (en) 1974-10-24
NL7317176A (en) 1974-10-15
FR2225844A1 (en) 1974-11-08
FR2225844B1 (en) 1977-06-10
IT1008753B (en) 1976-11-30
CA997869A (en) 1976-09-28
JPS503585A (en) 1975-01-14

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee