NL7317176A - - Google Patents

Info

Publication number
NL7317176A
NL7317176A NL7317176A NL7317176A NL7317176A NL 7317176 A NL7317176 A NL 7317176A NL 7317176 A NL7317176 A NL 7317176A NL 7317176 A NL7317176 A NL 7317176A NL 7317176 A NL7317176 A NL 7317176A
Authority
NL
Netherlands
Application number
NL7317176A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7317176A publication Critical patent/NL7317176A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
NL7317176A 1973-04-12 1973-12-14 NL7317176A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35058773A 1973-04-12 1973-04-12

Publications (1)

Publication Number Publication Date
NL7317176A true NL7317176A (xx) 1974-10-15

Family

ID=23377367

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7317176A NL7317176A (xx) 1973-04-12 1973-12-14

Country Status (7)

Country Link
JP (1) JPS503585A (xx)
CA (1) CA997869A (xx)
DE (1) DE2415736A1 (xx)
FR (1) FR2225844B1 (xx)
GB (1) GB1443999A (xx)
IT (1) IT1008753B (xx)
NL (1) NL7317176A (xx)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558019A (en) * 1978-06-30 1980-01-21 Nec Corp Semiconductor device
US4442529A (en) * 1981-02-04 1984-04-10 At&T Bell Telephone Laboratories, Incorporated Power supply rejection characteristics of CMOS circuits
NL8301554A (nl) * 1982-05-06 1983-12-01 Mitsubishi Electric Corp Geintegreerde schakeling-inrichting van het cmos-type.
JPS5955052A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体集積回路装置の製造方法
JPS60207368A (ja) * 1984-03-31 1985-10-18 Res Dev Corp Of Japan 相補型mos集積回路の製造方法
JPS60250664A (ja) * 1984-05-26 1985-12-11 Toshiba Corp 半導体集積回路装置およびその製造方法
JPH0652792B2 (ja) * 1985-02-26 1994-07-06 日産自動車株式会社 半導体装置
JPS6386555A (ja) * 1986-09-30 1988-04-16 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
DE2415736A1 (de) 1974-10-24
FR2225844A1 (xx) 1974-11-08
FR2225844B1 (xx) 1977-06-10
IT1008753B (it) 1976-11-30
CA997869A (en) 1976-09-28
JPS503585A (xx) 1975-01-14
GB1443999A (en) 1976-07-28

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed