FR2335045A1 - Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant - Google Patents

Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant

Info

Publication number
FR2335045A1
FR2335045A1 FR7632456A FR7632456A FR2335045A1 FR 2335045 A1 FR2335045 A1 FR 2335045A1 FR 7632456 A FR7632456 A FR 7632456A FR 7632456 A FR7632456 A FR 7632456A FR 2335045 A1 FR2335045 A1 FR 2335045A1
Authority
FR
France
Prior art keywords
devices
lifetime
carriers
procedure
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7632456A
Other languages
English (en)
Other versions
FR2335045B1 (fr
Inventor
Michael R Poponiak
Tsu-Hsing Ye
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2335045A1 publication Critical patent/FR2335045A1/fr
Application granted granted Critical
Publication of FR2335045B1 publication Critical patent/FR2335045B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7632456A 1975-12-12 1976-10-18 Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant Granted FR2335045A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64013775A 1975-12-12 1975-12-12

Publications (2)

Publication Number Publication Date
FR2335045A1 true FR2335045A1 (fr) 1977-07-08
FR2335045B1 FR2335045B1 (fr) 1979-09-21

Family

ID=24566992

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7632456A Granted FR2335045A1 (fr) 1975-12-12 1976-10-18 Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant

Country Status (5)

Country Link
JP (1) JPS5272583A (fr)
DE (1) DE2642206A1 (fr)
FR (1) FR2335045A1 (fr)
GB (1) GB1503249A (fr)
IT (1) IT1123671B (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030856B1 (fr) * 1979-12-13 1984-03-21 Fujitsu Limited Cellule à mémoire semiconductrice à pompage de charges comprenant une région de stockage de charge et dispositif à mémoire utilisant ces cellules
EP0253059A2 (fr) * 1986-03-20 1988-01-20 Hitachi, Ltd. Procédé pour supprimer la montée de la couche enterrée d'un dispositif semi-conducteur
WO1995006956A1 (fr) * 1993-09-03 1995-03-09 National Semiconductor Corporation Procede d'isolement planar apte a etre utilise dans l'industrie de la microelectronique
WO1996026536A1 (fr) * 1995-02-20 1996-08-29 Rohm Co., Ltd. Dispositif a semiconducteur dote d'un cristal a defauts, et son procede de fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143563A (ja) * 1982-02-22 1983-08-26 Hitachi Ltd 半導体装置の製造方法
NL8301554A (nl) * 1982-05-06 1983-12-01 Mitsubishi Electric Corp Geintegreerde schakeling-inrichting van het cmos-type.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030856B1 (fr) * 1979-12-13 1984-03-21 Fujitsu Limited Cellule à mémoire semiconductrice à pompage de charges comprenant une région de stockage de charge et dispositif à mémoire utilisant ces cellules
EP0253059A2 (fr) * 1986-03-20 1988-01-20 Hitachi, Ltd. Procédé pour supprimer la montée de la couche enterrée d'un dispositif semi-conducteur
EP0253059A3 (fr) * 1986-03-20 1989-09-13 Hitachi, Ltd. Procédé pour supprimer la montée de la couche enterrée d'un dispositif semi-conducteur
WO1995006956A1 (fr) * 1993-09-03 1995-03-09 National Semiconductor Corporation Procede d'isolement planar apte a etre utilise dans l'industrie de la microelectronique
WO1996026536A1 (fr) * 1995-02-20 1996-08-29 Rohm Co., Ltd. Dispositif a semiconducteur dote d'un cristal a defauts, et son procede de fabrication

Also Published As

Publication number Publication date
DE2642206A1 (de) 1977-06-23
GB1503249A (en) 1978-03-08
IT1123671B (it) 1986-04-30
JPS5272583A (en) 1977-06-17
FR2335045B1 (fr) 1979-09-21

Similar Documents

Publication Publication Date Title
FR2320636A1 (fr) Procede pour reduire la duree de vie des porteurs minoritaires dans les semi-conducteurs et dispositifs en resultant
GB1548756A (en) Semicondutor device
SE7600506L (sv) Stoppningsanordning
IT1068041B (it) Procedimento e dispositivo per il controllo della scabrosira di superfici
JPS5216990A (en) Semiconductor device
FR2456389B1 (fr) Structure d'electrodes pour dispositifs semi-conducteurs
FR2288392A1 (fr) Procede de realisation de dispositifs semiconducteurs
SE410911B (sv) Halvledaranordning
FR2307281A1 (fr) Procede et dispositif pour la fabrication technique de porte-objets prerevetus
SE418977B (sv) Anordning vid malapparat for lignocellulosahaltigt material
FR2312867A1 (fr) Perfectionnement aux dispositifs de connexion
FR2315174A1 (fr) Dispositif electroluminescent au phosphure de gallium et procede pour sa fabrication
FR2329344A1 (fr) Procede de croissance de monocristaux semiconducteurs
SE402839B (sv) Halvledaranordning och forfarande for dess framstellning
JPS52119068A (en) Semiconductor device
IT1063263B (it) Dispositivo per la deposizione di materiale semiconduttore
FR2335045A1 (fr) Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant
FR2297271A1 (fr) Dispositif pour la fabrication de materiau en nappes
FR2351065A1 (fr) Verre pour la passivation de dispositifs semiconducteurs
BR7800627A (pt) Dispositivo semicondutor
SE7600724L (sv) Kontrollanordning for tyristorer
BR7606348A (pt) Dispositivo para lavagem de impurezas organicas e barrosas de substancias solidas de granulacao grossa e fina continuamente aduzidas
ATA474676A (de) Weichenstellvorrichtung
BR7603308A (pt) Dispositivo comutador
RO68713A (fr) Appareil pour la separation des liquides et des solides

Legal Events

Date Code Title Description
ST Notification of lapse