IT1123671B - Processo per la fabbricazione di dispositivi semiconduttori - Google Patents

Processo per la fabbricazione di dispositivi semiconduttori

Info

Publication number
IT1123671B
IT1123671B IT29128/76A IT2912876A IT1123671B IT 1123671 B IT1123671 B IT 1123671B IT 29128/76 A IT29128/76 A IT 29128/76A IT 2912876 A IT2912876 A IT 2912876A IT 1123671 B IT1123671 B IT 1123671B
Authority
IT
Italy
Prior art keywords
manufacture
semiconductive devices
semiconductive
devices
Prior art date
Application number
IT29128/76A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1123671B publication Critical patent/IT1123671B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00Ion implantation into wafers, substrates or parts of devices
    • H10P30/20Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50Physical imperfections
    • H10D62/53Physical imperfections the imperfections being within the semiconductor body 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00Ion implantation into wafers, substrates or parts of devices
    • H10P30/20Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00Gettering within semiconductor bodies
    • H10P36/03Gettering within semiconductor bodies within silicon bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/02Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
IT29128/76A 1975-12-12 1976-11-09 Processo per la fabbricazione di dispositivi semiconduttori IT1123671B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64013775A 1975-12-12 1975-12-12

Publications (1)

Publication Number Publication Date
IT1123671B true IT1123671B (it) 1986-04-30

Family

ID=24566992

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29128/76A IT1123671B (it) 1975-12-12 1976-11-09 Processo per la fabbricazione di dispositivi semiconduttori

Country Status (5)

Country Link
JP (1) JPS5272583A (it)
DE (1) DE2642206A1 (it)
FR (1) FR2335045A1 (it)
GB (1) GB1503249A (it)
IT (1) IT1123671B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030856B1 (en) * 1979-12-13 1984-03-21 Fujitsu Limited Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell
JPS58143563A (ja) * 1982-02-22 1983-08-26 Hitachi Ltd 半導体装置の製造方法
NL8301554A (nl) * 1982-05-06 1983-12-01 Mitsubishi Electric Corp Geintegreerde schakeling-inrichting van het cmos-type.
JPS62219636A (ja) * 1986-03-20 1987-09-26 Hitachi Ltd 半導体装置
EP0715770A1 (en) * 1993-09-03 1996-06-12 National Semiconductor Corporation Planar isolation method for use in fabrication of microelectronics
JP2883017B2 (ja) * 1995-02-20 1999-04-19 ローム株式会社 半導体装置およびその製法

Also Published As

Publication number Publication date
GB1503249A (en) 1978-03-08
FR2335045B1 (it) 1979-09-21
JPS5272583A (en) 1977-06-17
DE2642206A1 (de) 1977-06-23
FR2335045A1 (fr) 1977-07-08

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