IT1123671B - Processo per la fabbricazione di dispositivi semiconduttori - Google Patents
Processo per la fabbricazione di dispositivi semiconduttoriInfo
- Publication number
- IT1123671B IT1123671B IT29128/76A IT2912876A IT1123671B IT 1123671 B IT1123671 B IT 1123671B IT 29128/76 A IT29128/76 A IT 29128/76A IT 2912876 A IT2912876 A IT 2912876A IT 1123671 B IT1123671 B IT 1123671B
- Authority
- IT
- Italy
- Prior art keywords
- manufacture
- semiconductive devices
- semiconductive
- devices
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
- H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P36/00—Gettering within semiconductor bodies
- H10P36/03—Gettering within semiconductor bodies within silicon bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/02—Manufacture or treatment of conductive package substrates serving as an interconnection, e.g. of metal plates
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64013775A | 1975-12-12 | 1975-12-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1123671B true IT1123671B (it) | 1986-04-30 |
Family
ID=24566992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT29128/76A IT1123671B (it) | 1975-12-12 | 1976-11-09 | Processo per la fabbricazione di dispositivi semiconduttori |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5272583A (it) |
| DE (1) | DE2642206A1 (it) |
| FR (1) | FR2335045A1 (it) |
| GB (1) | GB1503249A (it) |
| IT (1) | IT1123671B (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0030856B1 (en) * | 1979-12-13 | 1984-03-21 | Fujitsu Limited | Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell |
| JPS58143563A (ja) * | 1982-02-22 | 1983-08-26 | Hitachi Ltd | 半導体装置の製造方法 |
| NL8301554A (nl) * | 1982-05-06 | 1983-12-01 | Mitsubishi Electric Corp | Geintegreerde schakeling-inrichting van het cmos-type. |
| JPS62219636A (ja) * | 1986-03-20 | 1987-09-26 | Hitachi Ltd | 半導体装置 |
| EP0715770A1 (en) * | 1993-09-03 | 1996-06-12 | National Semiconductor Corporation | Planar isolation method for use in fabrication of microelectronics |
| JP2883017B2 (ja) * | 1995-02-20 | 1999-04-19 | ローム株式会社 | 半導体装置およびその製法 |
-
1976
- 1976-09-20 DE DE19762642206 patent/DE2642206A1/de active Pending
- 1976-10-18 FR FR7632456A patent/FR2335045A1/fr active Granted
- 1976-11-09 IT IT29128/76A patent/IT1123671B/it active
- 1976-11-11 JP JP51134744A patent/JPS5272583A/ja active Pending
- 1976-12-06 GB GB50821/76A patent/GB1503249A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1503249A (en) | 1978-03-08 |
| FR2335045B1 (it) | 1979-09-21 |
| JPS5272583A (en) | 1977-06-17 |
| DE2642206A1 (de) | 1977-06-23 |
| FR2335045A1 (fr) | 1977-07-08 |
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