IT1108994B - Processo per la fabbricazione di dispositivi semiconduttori - Google Patents
Processo per la fabbricazione di dispositivi semiconduttoriInfo
- Publication number
- IT1108994B IT1108994B IT26098/78A IT2609878A IT1108994B IT 1108994 B IT1108994 B IT 1108994B IT 26098/78 A IT26098/78 A IT 26098/78A IT 2609878 A IT2609878 A IT 2609878A IT 1108994 B IT1108994 B IT 1108994B
- Authority
- IT
- Italy
- Prior art keywords
- manufacture
- semiconductive devices
- semiconductive
- devices
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/820,991 US4128439A (en) | 1977-08-01 | 1977-08-01 | Method for forming self-aligned field effect device by ion implantation and outdiffusion |
Publications (2)
Publication Number | Publication Date |
---|---|
IT7826098A0 IT7826098A0 (it) | 1978-07-26 |
IT1108994B true IT1108994B (it) | 1985-12-16 |
Family
ID=25232219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT26098/78A IT1108994B (it) | 1977-08-01 | 1978-07-26 | Processo per la fabbricazione di dispositivi semiconduttori |
Country Status (6)
Country | Link |
---|---|
US (1) | US4128439A (it) |
EP (1) | EP0000545B1 (it) |
JP (1) | JPS6046831B2 (it) |
CA (1) | CA1112374A (it) |
DE (1) | DE2860467D1 (it) |
IT (1) | IT1108994B (it) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4218267A (en) * | 1979-04-23 | 1980-08-19 | Rockwell International Corporation | Microelectronic fabrication method minimizing threshold voltage variation |
JPS55151349A (en) * | 1979-05-15 | 1980-11-25 | Matsushita Electronics Corp | Forming method of insulation isolating region |
US4338616A (en) * | 1980-02-19 | 1982-07-06 | Xerox Corporation | Self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain |
US4391651A (en) * | 1981-10-15 | 1983-07-05 | The United States Of America As Represented By The Secretary Of The Navy | Method of forming a hyperabrupt interface in a GaAs substrate |
JPS58170067A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
NL188923C (nl) * | 1983-07-05 | 1992-11-02 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
US4648175A (en) * | 1985-06-12 | 1987-03-10 | Ncr Corporation | Use of selectively deposited tungsten for contact formation and shunting metallization |
US4734752A (en) * | 1985-09-27 | 1988-03-29 | Advanced Micro Devices, Inc. | Electrostatic discharge protection device for CMOS integrated circuit outputs |
ATE58030T1 (de) * | 1986-06-10 | 1990-11-15 | Siemens Ag | Verfahren zum herstellen von hochintegrierten komplementaeren mosfeldeffekttransistorschaltungen. |
US5602403A (en) * | 1991-03-01 | 1997-02-11 | The United States Of America As Represented By The Secretary Of The Navy | Ion Implantation buried gate insulator field effect transistor |
JPH05283710A (ja) * | 1991-12-06 | 1993-10-29 | Intel Corp | 高電圧mosトランジスタ及びその製造方法 |
KR0166101B1 (ko) * | 1993-10-21 | 1999-01-15 | 김주용 | 정전방전 보호회로의 트랜지스터 및 그 제조방법 |
JPH0955496A (ja) * | 1995-08-17 | 1997-02-25 | Oki Electric Ind Co Ltd | 高耐圧mosトランジスタ及びその製造方法 |
EP1050562A1 (en) * | 1999-05-04 | 2000-11-08 | Fina Research S.A. | Low aromatics composition |
KR100640207B1 (ko) * | 1999-10-29 | 2006-10-31 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터 및 그 제조방법 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3449643A (en) * | 1966-09-09 | 1969-06-10 | Hitachi Ltd | Semiconductor integrated circuit device |
BE758683A (fr) * | 1969-11-10 | 1971-05-10 | Ibm | Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle |
US3734787A (en) * | 1970-01-09 | 1973-05-22 | Ibm | Fabrication of diffused junction capacitor by simultaneous outdiffusion |
JPS4936514B1 (it) * | 1970-05-13 | 1974-10-01 | ||
US4058887A (en) * | 1971-02-19 | 1977-11-22 | Ibm Corporation | Method for forming a transistor comprising layers of silicon dioxide and silicon nitride |
US4032372A (en) * | 1971-04-28 | 1977-06-28 | International Business Machines Corporation | Epitaxial outdiffusion technique for integrated bipolar and field effect transistors |
JPS5636585B2 (it) * | 1973-07-02 | 1981-08-25 | ||
FR2257998B1 (it) * | 1974-01-10 | 1976-11-26 | Commissariat Energie Atomique | |
US3899373A (en) * | 1974-05-20 | 1975-08-12 | Ibm | Method for forming a field effect device |
US4001048A (en) * | 1974-06-26 | 1977-01-04 | Signetics Corporation | Method of making metal oxide semiconductor structures using ion implantation |
US3948694A (en) * | 1975-04-30 | 1976-04-06 | Motorola, Inc. | Self-aligned method for integrated circuit manufacture |
DE2554426C3 (de) * | 1975-12-03 | 1979-06-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor |
US4046606A (en) * | 1976-05-10 | 1977-09-06 | Rca Corporation | Simultaneous location of areas having different conductivities |
JPS52135685A (en) * | 1976-05-10 | 1977-11-12 | Nec Corp | Semiconductor device |
JPS52156576A (en) * | 1976-06-23 | 1977-12-27 | Hitachi Ltd | Production of mis semiconductor device |
US4029522A (en) * | 1976-06-30 | 1977-06-14 | International Business Machines Corporation | Method to fabricate ion-implanted layers with abrupt edges to reduce the parasitic resistance of Schottky barrier fets and bipolar transistors |
-
1977
- 1977-08-01 US US05/820,991 patent/US4128439A/en not_active Expired - Lifetime
-
1978
- 1978-07-07 JP JP53082175A patent/JPS6046831B2/ja not_active Expired
- 1978-07-10 CA CA307,067A patent/CA1112374A/en not_active Expired
- 1978-07-19 EP EP78100443A patent/EP0000545B1/de not_active Expired
- 1978-07-19 DE DE7878100443T patent/DE2860467D1/de not_active Expired
- 1978-07-26 IT IT26098/78A patent/IT1108994B/it active
Also Published As
Publication number | Publication date |
---|---|
IT7826098A0 (it) | 1978-07-26 |
US4128439A (en) | 1978-12-05 |
DE2860467D1 (en) | 1981-03-26 |
JPS5427376A (en) | 1979-03-01 |
EP0000545B1 (de) | 1981-02-11 |
JPS6046831B2 (ja) | 1985-10-18 |
CA1112374A (en) | 1981-11-10 |
EP0000545A1 (de) | 1979-02-07 |
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