IT1108994B - Processo per la fabbricazione di dispositivi semiconduttori - Google Patents

Processo per la fabbricazione di dispositivi semiconduttori

Info

Publication number
IT1108994B
IT1108994B IT26098/78A IT2609878A IT1108994B IT 1108994 B IT1108994 B IT 1108994B IT 26098/78 A IT26098/78 A IT 26098/78A IT 2609878 A IT2609878 A IT 2609878A IT 1108994 B IT1108994 B IT 1108994B
Authority
IT
Italy
Prior art keywords
manufacture
semiconductive devices
semiconductive
devices
Prior art date
Application number
IT26098/78A
Other languages
English (en)
Other versions
IT7826098A0 (it
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7826098A0 publication Critical patent/IT7826098A0/it
Application granted granted Critical
Publication of IT1108994B publication Critical patent/IT1108994B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
IT26098/78A 1977-08-01 1978-07-26 Processo per la fabbricazione di dispositivi semiconduttori IT1108994B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/820,991 US4128439A (en) 1977-08-01 1977-08-01 Method for forming self-aligned field effect device by ion implantation and outdiffusion

Publications (2)

Publication Number Publication Date
IT7826098A0 IT7826098A0 (it) 1978-07-26
IT1108994B true IT1108994B (it) 1985-12-16

Family

ID=25232219

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26098/78A IT1108994B (it) 1977-08-01 1978-07-26 Processo per la fabbricazione di dispositivi semiconduttori

Country Status (6)

Country Link
US (1) US4128439A (it)
EP (1) EP0000545B1 (it)
JP (1) JPS6046831B2 (it)
CA (1) CA1112374A (it)
DE (1) DE2860467D1 (it)
IT (1) IT1108994B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4218267A (en) * 1979-04-23 1980-08-19 Rockwell International Corporation Microelectronic fabrication method minimizing threshold voltage variation
JPS55151349A (en) * 1979-05-15 1980-11-25 Matsushita Electronics Corp Forming method of insulation isolating region
US4338616A (en) * 1980-02-19 1982-07-06 Xerox Corporation Self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain
US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate
JPS58170067A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 薄膜トランジスタの製造方法
NL188923C (nl) * 1983-07-05 1992-11-02 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
US4648175A (en) * 1985-06-12 1987-03-10 Ncr Corporation Use of selectively deposited tungsten for contact formation and shunting metallization
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs
EP0248988B1 (de) * 1986-06-10 1990-10-31 Siemens Aktiengesellschaft Verfahren zum Herstellen von hochintegrierten komplementären MOS-Feldeffekttransistorschaltungen
US5602403A (en) * 1991-03-01 1997-02-11 The United States Of America As Represented By The Secretary Of The Navy Ion Implantation buried gate insulator field effect transistor
JPH05283710A (ja) * 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
KR0166101B1 (ko) * 1993-10-21 1999-01-15 김주용 정전방전 보호회로의 트랜지스터 및 그 제조방법
JPH0955496A (ja) * 1995-08-17 1997-02-25 Oki Electric Ind Co Ltd 高耐圧ｍｏｓトランジスタ及びその製造方法
EP1050562A1 (en) * 1999-05-04 2000-11-08 Fina Research S.A. Low aromatics composition
KR100640207B1 (ko) * 1999-10-29 2006-10-31 엘지.필립스 엘시디 주식회사 박막트랜지스터 및 그 제조방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449643A (en) * 1966-09-09 1969-06-10 Hitachi Ltd Semiconductor integrated circuit device
BE758683A (fr) * 1969-11-10 1971-05-10 Ibm Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle
US3734787A (en) * 1970-01-09 1973-05-22 Ibm Fabrication of diffused junction capacitor by simultaneous outdiffusion
JPS4936514B1 (it) * 1970-05-13 1974-10-01
US4058887A (en) * 1971-02-19 1977-11-22 Ibm Corporation Method for forming a transistor comprising layers of silicon dioxide and silicon nitride
US4032372A (en) * 1971-04-28 1977-06-28 International Business Machines Corporation Epitaxial outdiffusion technique for integrated bipolar and field effect transistors
JPS5636585B2 (it) * 1973-07-02 1981-08-25
FR2257998B1 (it) * 1974-01-10 1976-11-26 Commissariat Energie Atomique
US3899373A (en) * 1974-05-20 1975-08-12 Ibm Method for forming a field effect device
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US3948694A (en) * 1975-04-30 1976-04-06 Motorola, Inc. Self-aligned method for integrated circuit manufacture
DE2554426C3 (de) * 1975-12-03 1979-06-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor
JPS52135685A (en) * 1976-05-10 1977-11-12 Nec Corp Semiconductor device
US4046606A (en) * 1976-05-10 1977-09-06 Rca Corporation Simultaneous location of areas having different conductivities
JPS52156576A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Production of mis semiconductor device
US4029522A (en) * 1976-06-30 1977-06-14 International Business Machines Corporation Method to fabricate ion-implanted layers with abrupt edges to reduce the parasitic resistance of Schottky barrier fets and bipolar transistors

Also Published As

Publication number Publication date
CA1112374A (en) 1981-11-10
IT7826098A0 (it) 1978-07-26
US4128439A (en) 1978-12-05
EP0000545B1 (de) 1981-02-11
JPS6046831B2 (ja) 1985-10-18
EP0000545A1 (de) 1979-02-07
JPS5427376A (en) 1979-03-01
DE2860467D1 (en) 1981-03-26

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