FR2420208A1 - Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee - Google Patents

Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee

Info

Publication number
FR2420208A1
FR2420208A1 FR7807800A FR7807800A FR2420208A1 FR 2420208 A1 FR2420208 A1 FR 2420208A1 FR 7807800 A FR7807800 A FR 7807800A FR 7807800 A FR7807800 A FR 7807800A FR 2420208 A1 FR2420208 A1 FR 2420208A1
Authority
FR
France
Prior art keywords
source
collectively
sources
stage
accorded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7807800A
Other languages
English (en)
Other versions
FR2420208B1 (fr
Inventor
Jacques Espaignol
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7807800A priority Critical patent/FR2420208A1/fr
Priority to US06/020,737 priority patent/US4283734A/en
Priority to GB7909307A priority patent/GB2016805B/en
Priority to DE19792910419 priority patent/DE2910419A1/de
Priority to JP3165779A priority patent/JPS54158181A/ja
Publication of FR2420208A1 publication Critical patent/FR2420208A1/fr
Application granted granted Critical
Publication of FR2420208B1 publication Critical patent/FR2420208B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Dicing (AREA)
  • Superheterodyne Receivers (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne la réalisation de sources d'ondes électromagnétiques à très haute fréquence, comportant une diode noyée dans un milieu diélectrique jouant le rôle d'adaptateur d'impédance, par exemple un cylindre de diamètre égal à la demi-longueur d'onde, donc inférieur au centimètre. Il est proposé un procédé technologique permettant de réaliser collectivement de telles sources. Dans un premier stade; on fabrique collectivement de telles sources. Dans un premier stade, on fabrique collectivement des ensembles comportant seulement une diode oscillatrice 131, placée sur un support conducteur 31, surmontée d'un gros plot de connexion 101 et entourée de diélectrique 141. Dans un deuxième stade on fabrique aussi collectivement l'adaptateur d'impédance. Application aux dispositifs à tres haute fréquence.
FR7807800A 1978-03-17 1978-03-17 Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee Granted FR2420208A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7807800A FR2420208A1 (fr) 1978-03-17 1978-03-17 Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee
US06/020,737 US4283734A (en) 1978-03-17 1979-03-15 Process for the manufacture of millimeter wave sources of the module type
GB7909307A GB2016805B (en) 1978-03-17 1979-03-16 Process for the manufacture of millimetre wave soucres of the module type
DE19792910419 DE2910419A1 (de) 1978-03-17 1979-03-16 Verfahren zur sammelherstellung von vorabgestimmten millimeterwellen-quellen
JP3165779A JPS54158181A (en) 1978-03-17 1979-03-17 Millimeter wave generator and method of fabricating same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7807800A FR2420208A1 (fr) 1978-03-17 1978-03-17 Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee

Publications (2)

Publication Number Publication Date
FR2420208A1 true FR2420208A1 (fr) 1979-10-12
FR2420208B1 FR2420208B1 (fr) 1982-04-02

Family

ID=9205954

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7807800A Granted FR2420208A1 (fr) 1978-03-17 1978-03-17 Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee

Country Status (5)

Country Link
US (1) US4283734A (fr)
JP (1) JPS54158181A (fr)
DE (1) DE2910419A1 (fr)
FR (1) FR2420208A1 (fr)
GB (1) GB2016805B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4279070A (en) * 1980-03-04 1981-07-21 The United States Of America As Represented By The Secretary Of The Air Force Method of making integrated waveguide cavities
US4692791A (en) * 1984-07-13 1987-09-08 Texas Instruments Incorporated Monolithic IMPATT with stripline leads
US4859633A (en) * 1985-01-31 1989-08-22 Texas Instruments Incorporated Process for fabricating monolithic microwave diodes
US4673958A (en) * 1985-01-31 1987-06-16 Texas Instruments Incorporated Monolithic microwave diodes
JP2810322B2 (ja) * 1993-07-16 1998-10-15 株式会社ジャパンエナジー 半導体装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689993A (en) * 1971-07-26 1972-09-12 Texas Instruments Inc Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks
FR2156123A1 (fr) * 1971-10-07 1973-05-25 Philips Nv
US3874918A (en) * 1974-02-19 1975-04-01 Trw Inc Structure and process for semiconductor device using batch processing
US3897627A (en) * 1974-06-28 1975-08-05 Rca Corp Method for manufacturing semiconductor devices
FR2307374A1 (fr) * 1975-04-11 1976-11-05 Thomson Csf Procede de fabrication de lames semi-conductrices tres minces, a faces paralleles, et diodes hyperfrequence fabriquees par ledit procede
FR2348574A1 (fr) * 1976-04-16 1977-11-10 Thomson Csf Procede de realisation d'une source d'ondes millimetriques et adaptation d'une telle source a la transmission par guide d'ondes

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3820236A (en) * 1969-06-20 1974-06-28 Texas Instruments Inc Method of making metal semiconductor diodes having plated heat sink members
US4035830A (en) * 1974-04-29 1977-07-12 Raytheon Company Composite semiconductor circuit and method of manufacture

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689993A (en) * 1971-07-26 1972-09-12 Texas Instruments Inc Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks
FR2156123A1 (fr) * 1971-10-07 1973-05-25 Philips Nv
US3874918A (en) * 1974-02-19 1975-04-01 Trw Inc Structure and process for semiconductor device using batch processing
US3897627A (en) * 1974-06-28 1975-08-05 Rca Corp Method for manufacturing semiconductor devices
FR2307374A1 (fr) * 1975-04-11 1976-11-05 Thomson Csf Procede de fabrication de lames semi-conductrices tres minces, a faces paralleles, et diodes hyperfrequence fabriquees par ledit procede
FR2348574A1 (fr) * 1976-04-16 1977-11-10 Thomson Csf Procede de realisation d'une source d'ondes millimetriques et adaptation d'une telle source a la transmission par guide d'ondes

Also Published As

Publication number Publication date
US4283734A (en) 1981-08-11
GB2016805A (en) 1979-09-26
DE2910419A1 (de) 1979-09-20
JPS54158181A (en) 1979-12-13
FR2420208B1 (fr) 1982-04-02
GB2016805B (en) 1982-05-12

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