NL7711064A - Integrated semiconductor switching element - has bipolar transistor whose base is coupled to substrate by first conductivity channel - Google Patents

Integrated semiconductor switching element - has bipolar transistor whose base is coupled to substrate by first conductivity channel

Info

Publication number
NL7711064A
NL7711064A NL7711064A NL7711064A NL7711064A NL 7711064 A NL7711064 A NL 7711064A NL 7711064 A NL7711064 A NL 7711064A NL 7711064 A NL7711064 A NL 7711064A NL 7711064 A NL7711064 A NL 7711064A
Authority
NL
Netherlands
Prior art keywords
substrate
conductivity
switching element
bipolar transistor
coupled
Prior art date
Application number
NL7711064A
Other languages
Dutch (nl)
Original Assignee
Vyacheslav Yakovlevich Kremlev
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vyacheslav Yakovlevich Kremlev filed Critical Vyacheslav Yakovlevich Kremlev
Priority to NL7711064A priority Critical patent/NL7711064A/en
Publication of NL7711064A publication Critical patent/NL7711064A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only

Abstract

The switching element for rapid action is based on a bipolar transistor integrated on a substrate (1) of first conductivity in a vertical series. Next to the substrate is provided a collector zone of opposite conductivity, then a base zone (3) of first conductivity, and finally an emitter zone of opposite conductivity. The base zone and the substrate are connected by a channel (5) of the substrate conductivity. The channel width is similar to the double max. thickness of the layer (14) of the space charge in the pn-junction between the collector zone and the channel.
NL7711064A 1977-10-07 1977-10-07 Integrated semiconductor switching element - has bipolar transistor whose base is coupled to substrate by first conductivity channel NL7711064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL7711064A NL7711064A (en) 1977-10-07 1977-10-07 Integrated semiconductor switching element - has bipolar transistor whose base is coupled to substrate by first conductivity channel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7711064A NL7711064A (en) 1977-10-07 1977-10-07 Integrated semiconductor switching element - has bipolar transistor whose base is coupled to substrate by first conductivity channel

Publications (1)

Publication Number Publication Date
NL7711064A true NL7711064A (en) 1979-04-10

Family

ID=19829313

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7711064A NL7711064A (en) 1977-10-07 1977-10-07 Integrated semiconductor switching element - has bipolar transistor whose base is coupled to substrate by first conductivity channel

Country Status (1)

Country Link
NL (1) NL7711064A (en)

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Legal Events

Date Code Title Description
A1C A request for examination has been filed
BV The patent application has lapsed