DE68928670D1 - Heterostrukturbipolartransistor - Google Patents
HeterostrukturbipolartransistorInfo
- Publication number
- DE68928670D1 DE68928670D1 DE68928670T DE68928670T DE68928670D1 DE 68928670 D1 DE68928670 D1 DE 68928670D1 DE 68928670 T DE68928670 T DE 68928670T DE 68928670 T DE68928670 T DE 68928670T DE 68928670 D1 DE68928670 D1 DE 68928670D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- heterostructure bipolar
- heterostructure
- transistor
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0895—Tunnel injectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25079088A | 1988-09-28 | 1988-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68928670D1 true DE68928670D1 (de) | 1998-06-18 |
DE68928670T2 DE68928670T2 (de) | 1998-10-01 |
Family
ID=22949158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1989628670 Expired - Fee Related DE68928670T2 (de) | 1988-09-28 | 1989-09-19 | Heterostrukturbipolartransistor |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0361759B1 (de) |
JP (1) | JPH0732163B2 (de) |
CA (1) | CA1318418C (de) |
DE (1) | DE68928670T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2924985B2 (ja) * | 1991-06-28 | 1999-07-26 | 日本ジーイープラスチックス株式会社 | ポリカーボネートの製造方法 |
US5445976A (en) * | 1994-08-09 | 1995-08-29 | Texas Instruments Incorporated | Method for producing bipolar transistor having reduced base-collector capacitance |
JPH08115921A (ja) * | 1994-10-17 | 1996-05-07 | Mitsubishi Electric Corp | ヘテロ接合バイポーラトランジスタ,及びその製造方法 |
US5665614A (en) * | 1995-06-06 | 1997-09-09 | Hughes Electronics | Method for making fully self-aligned submicron heterojunction bipolar transistor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2547677B1 (fr) * | 1983-06-17 | 1986-10-31 | Ankri David | Transistor bipolaire a double heterojonction compatible avec des composants optoelectroniques pour l'integration monolithique |
JPH0611056B2 (ja) * | 1985-12-03 | 1994-02-09 | 富士通株式会社 | 高速半導体装置 |
CA1303754C (en) * | 1988-09-07 | 1992-06-16 | American Telephone And Telegraph Company | Bipolar hot electron transistor |
-
1989
- 1989-08-08 CA CA000607763A patent/CA1318418C/en not_active Expired - Fee Related
- 1989-09-19 EP EP89309501A patent/EP0361759B1/de not_active Expired - Lifetime
- 1989-09-19 DE DE1989628670 patent/DE68928670T2/de not_active Expired - Fee Related
- 1989-09-28 JP JP25082889A patent/JPH0732163B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0732163B2 (ja) | 1995-04-10 |
EP0361759A3 (de) | 1990-11-22 |
JPH02123742A (ja) | 1990-05-11 |
EP0361759A2 (de) | 1990-04-04 |
CA1318418C (en) | 1993-05-25 |
EP0361759B1 (de) | 1998-05-13 |
DE68928670T2 (de) | 1998-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |