DE3855093T2 - Bipolarhalbleiteranordnung - Google Patents

Bipolarhalbleiteranordnung

Info

Publication number
DE3855093T2
DE3855093T2 DE3855093T DE3855093T DE3855093T2 DE 3855093 T2 DE3855093 T2 DE 3855093T2 DE 3855093 T DE3855093 T DE 3855093T DE 3855093 T DE3855093 T DE 3855093T DE 3855093 T2 DE3855093 T2 DE 3855093T2
Authority
DE
Germany
Prior art keywords
semiconductor arrangement
bipolar semiconductor
bipolar
arrangement
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855093T
Other languages
English (en)
Other versions
DE3855093D1 (de
Inventor
Takashi C O Patent Divi Kimura
Mie C O Patent Division Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3855093D1 publication Critical patent/DE3855093D1/de
Publication of DE3855093T2 publication Critical patent/DE3855093T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Bipolar Transistors (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
DE3855093T 1987-10-14 1988-10-13 Bipolarhalbleiteranordnung Expired - Fee Related DE3855093T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62258661A JPH01100935A (ja) 1987-10-14 1987-10-14 半導体装置

Publications (2)

Publication Number Publication Date
DE3855093D1 DE3855093D1 (de) 1996-04-18
DE3855093T2 true DE3855093T2 (de) 1996-08-29

Family

ID=17323344

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855093T Expired - Fee Related DE3855093T2 (de) 1987-10-14 1988-10-13 Bipolarhalbleiteranordnung

Country Status (5)

Country Link
US (1) US4996580A (de)
EP (1) EP0312048B1 (de)
JP (1) JPH01100935A (de)
KR (1) KR910007104B1 (de)
DE (1) DE3855093T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5311055A (en) * 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
TW350089B (en) * 1996-11-11 1999-01-11 Nippon Electric Co A semiconductor and the manufacturing method
GB0022345D0 (en) * 2000-09-12 2000-10-25 Jackel Int Ltd A drinking vessel
US20070237207A1 (en) 2004-06-09 2007-10-11 National Semiconductor Corporation Beta variation cancellation in temperature sensors

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268376A (en) * 1975-12-05 1977-06-07 Nec Corp Semiconductor device
US4197632A (en) * 1975-12-05 1980-04-15 Nippon Electric Co., Ltd. Semiconductor device
US4213806A (en) * 1978-10-05 1980-07-22 Analog Devices, Incorporated Forming an IC chip with buried zener diode
US4319257A (en) * 1980-01-16 1982-03-09 Harris Corporation Low thermal coefficient semiconductor device
US4435225A (en) * 1981-05-11 1984-03-06 Fairchild Camera & Instrument Corporation Method of forming self-aligned lateral bipolar transistor
JPS61181140A (ja) * 1985-02-06 1986-08-13 Nec Corp 半導体装置および製造方法
JPS62193137A (ja) * 1986-02-19 1987-08-25 Hitachi Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH01100935A (ja) 1989-04-19
US4996580A (en) 1991-02-26
EP0312048A2 (de) 1989-04-19
EP0312048B1 (de) 1996-03-13
KR890007402A (ko) 1989-06-19
KR910007104B1 (ko) 1991-09-18
EP0312048A3 (en) 1990-07-25
DE3855093D1 (de) 1996-04-18
JPH0318341B2 (de) 1991-03-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee