IT1217373B - Stadio ad alta resistenza d'uscita in tecnologia mos,particolarmente per circuiti integrati - Google Patents

Stadio ad alta resistenza d'uscita in tecnologia mos,particolarmente per circuiti integrati

Info

Publication number
IT1217373B
IT1217373B IT19991/88A IT1999188A IT1217373B IT 1217373 B IT1217373 B IT 1217373B IT 19991/88 A IT19991/88 A IT 19991/88A IT 1999188 A IT1999188 A IT 1999188A IT 1217373 B IT1217373 B IT 1217373B
Authority
IT
Italy
Prior art keywords
integrated circuits
high output
output resistance
mos technology
resistance stage
Prior art date
Application number
IT19991/88A
Other languages
English (en)
Other versions
IT8819991A0 (it
Inventor
Daniele Devecchi
Guido Torelli
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT19991/88A priority Critical patent/IT1217373B/it
Publication of IT8819991A0 publication Critical patent/IT8819991A0/it
Priority to US07/311,287 priority patent/US4952885A/en
Priority to EP89102973A priority patent/EP0335102A3/en
Priority to JP1074780A priority patent/JPH01289305A/ja
Application granted granted Critical
Publication of IT1217373B publication Critical patent/IT1217373B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—Dc amplifiers in which all stages are dc-coupled
    • H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
    • H03F3/345—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with field-effect devices
IT19991/88A 1988-03-28 1988-03-28 Stadio ad alta resistenza d'uscita in tecnologia mos,particolarmente per circuiti integrati IT1217373B (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT19991/88A IT1217373B (it) 1988-03-28 1988-03-28 Stadio ad alta resistenza d'uscita in tecnologia mos,particolarmente per circuiti integrati
US07/311,287 US4952885A (en) 1988-03-28 1989-02-15 MOS stage with high output resistance particularly for integrated circuits
EP89102973A EP0335102A3 (en) 1988-03-28 1989-02-21 Mos stage with high output resistance particularly for integrated circuits
JP1074780A JPH01289305A (ja) 1988-03-28 1989-03-27 特に集積回路のための出力抵抗が高いｍｏｓ段階

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19991/88A IT1217373B (it) 1988-03-28 1988-03-28 Stadio ad alta resistenza d'uscita in tecnologia mos,particolarmente per circuiti integrati

Publications (2)

Publication Number Publication Date
IT8819991A0 IT8819991A0 (it) 1988-03-28
IT1217373B true IT1217373B (it) 1990-03-22

Family

ID=11162911

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19991/88A IT1217373B (it) 1988-03-28 1988-03-28 Stadio ad alta resistenza d'uscita in tecnologia mos,particolarmente per circuiti integrati

Country Status (4)

Country Link
US (1) US4952885A (it)
EP (1) EP0335102A3 (it)
JP (1) JPH01289305A (it)
IT (1) IT1217373B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1229360B (it) * 1989-05-23 1991-08-08 Ist Nazionale Fisica Nucleare Amplificatore ad alto guadagno con basso rumore e bassa dissipazione di potenza, impiegante transistori ad effetto di campo.
US7187227B2 (en) * 2002-08-07 2007-03-06 Nippon Telegraph And Telephone Corporation Driver circuit
KR102141207B1 (ko) * 2013-11-11 2020-08-05 삼성디스플레이 주식회사 디스플레이 장치, 전원 전압 생성 장치, 및 전원 전압 생성 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739194A (en) * 1971-07-21 1973-06-12 Microsystems Int Ltd Static bipolar to mos interface circuit
US4045747A (en) * 1976-06-25 1977-08-30 Rca Corporation Complementary field effect transistor amplifier
US4191898A (en) * 1978-05-01 1980-03-04 Motorola, Inc. High voltage CMOS circuit
US4471292A (en) * 1982-11-10 1984-09-11 Texas Instruments Incorporated MOS Current mirror with high impedance output
US4518926A (en) * 1982-12-20 1985-05-21 At&T Bell Laboratories Gate-coupled field-effect transistor pair amplifier
US4568844A (en) * 1983-02-17 1986-02-04 At&T Bell Laboratories Field effect transistor inverter-level shifter circuitry
US4687954A (en) * 1984-03-06 1987-08-18 Kabushiki Kaisha Toshiba CMOS hysteresis circuit with enable switch or natural transistor
JPS62290204A (ja) * 1986-06-10 1987-12-17 Fujitsu Ltd カスケ−ド回路を含む電子回路
FR2607338A1 (fr) * 1986-11-21 1988-05-27 Eurotechnique Sa Circuit de commutation de tension en technologie mos

Also Published As

Publication number Publication date
JPH01289305A (ja) 1989-11-21
EP0335102A2 (en) 1989-10-04
US4952885A (en) 1990-08-28
EP0335102A3 (en) 1990-07-18
IT8819991A0 (it) 1988-03-28

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Effective date: 19970329