IT1229360B - Amplificatore ad alto guadagno con basso rumore e bassa dissipazione di potenza, impiegante transistori ad effetto di campo. - Google Patents

Amplificatore ad alto guadagno con basso rumore e bassa dissipazione di potenza, impiegante transistori ad effetto di campo.

Info

Publication number
IT1229360B
IT1229360B IT8920610A IT2061089A IT1229360B IT 1229360 B IT1229360 B IT 1229360B IT 8920610 A IT8920610 A IT 8920610A IT 2061089 A IT2061089 A IT 2061089A IT 1229360 B IT1229360 B IT 1229360B
Authority
IT
Italy
Prior art keywords
field
effect transistors
gain amplifier
power dissipation
high gain
Prior art date
Application number
IT8920610A
Other languages
English (en)
Other versions
IT8920610A0 (it
Inventor
Daniel Victor Camin
Gianluigi Pessina
Ezio Previtali
Original Assignee
Ist Nazionale Fisica Nucleare
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ist Nazionale Fisica Nucleare filed Critical Ist Nazionale Fisica Nucleare
Priority to IT8920610A priority Critical patent/IT1229360B/it
Publication of IT8920610A0 publication Critical patent/IT8920610A0/it
Priority to US07/521,998 priority patent/US5068623A/en
Application granted granted Critical
Publication of IT1229360B publication Critical patent/IT1229360B/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/226—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with junction-FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
IT8920610A 1989-05-23 1989-05-23 Amplificatore ad alto guadagno con basso rumore e bassa dissipazione di potenza, impiegante transistori ad effetto di campo. IT1229360B (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT8920610A IT1229360B (it) 1989-05-23 1989-05-23 Amplificatore ad alto guadagno con basso rumore e bassa dissipazione di potenza, impiegante transistori ad effetto di campo.
US07/521,998 US5068623A (en) 1989-05-23 1990-05-11 High-gain amplifier with low noise and low power dissipation, using field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8920610A IT1229360B (it) 1989-05-23 1989-05-23 Amplificatore ad alto guadagno con basso rumore e bassa dissipazione di potenza, impiegante transistori ad effetto di campo.

Publications (2)

Publication Number Publication Date
IT8920610A0 IT8920610A0 (it) 1989-05-23
IT1229360B true IT1229360B (it) 1991-08-08

Family

ID=11169514

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8920610A IT1229360B (it) 1989-05-23 1989-05-23 Amplificatore ad alto guadagno con basso rumore e bassa dissipazione di potenza, impiegante transistori ad effetto di campo.

Country Status (2)

Country Link
US (1) US5068623A (it)
IT (1) IT1229360B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3293699B2 (ja) * 1993-09-03 2002-06-17 キヤノン株式会社 増幅装置
US5506544A (en) * 1995-04-10 1996-04-09 Motorola, Inc. Bias circuit for depletion mode field effect transistors
US5710522A (en) * 1996-07-15 1998-01-20 Pass Laboratories, Inc. Amplifier having an active current source
EP1081455A1 (en) * 1999-08-30 2001-03-07 Eidgenössische Technische Hochschule Zürich Low-temperature preamplifier
US6498533B1 (en) * 2000-09-28 2002-12-24 Koninklijke Philips Electronics N.V. Bootstrapped dual-gate class E amplifier circuit
GB2408644B (en) * 2003-11-26 2007-04-25 Wolfson Ltd Amplifier
EP1635453A1 (en) * 2004-09-12 2006-03-15 Semiconductor Ideas to The Market (ItoM) BV Tunable low noise amplifier
US9520836B1 (en) * 2015-08-13 2016-12-13 Raytheon Company Multi-stage amplifier with cascode stage and DC bias regulator

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4100438A (en) * 1974-08-21 1978-07-11 Nippon Gakki Seizo Kabushiki Kaisha Compound transistor circuitry
IT1217373B (it) * 1988-03-28 1990-03-22 Sgs Thomson Microelectronics Stadio ad alta resistenza d'uscita in tecnologia mos,particolarmente per circuiti integrati

Also Published As

Publication number Publication date
IT8920610A0 (it) 1989-05-23
US5068623A (en) 1991-11-26

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960529