DE69531715D1 - Leseverstärker für Halbleiterspeicheranordnung - Google Patents
Leseverstärker für HalbleiterspeicheranordnungInfo
- Publication number
- DE69531715D1 DE69531715D1 DE69531715T DE69531715T DE69531715D1 DE 69531715 D1 DE69531715 D1 DE 69531715D1 DE 69531715 T DE69531715 T DE 69531715T DE 69531715 T DE69531715 T DE 69531715T DE 69531715 D1 DE69531715 D1 DE 69531715D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- sense amplifier
- amplifier
- sense
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/063—Current sense amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14626794 | 1994-06-28 | ||
JP14626794 | 1994-06-28 | ||
JP15736394 | 1994-07-08 | ||
JP15736394 | 1994-07-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69531715D1 true DE69531715D1 (de) | 2003-10-16 |
DE69531715T2 DE69531715T2 (de) | 2004-03-25 |
Family
ID=26477147
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69534964T Expired - Fee Related DE69534964T2 (de) | 1994-06-28 | 1995-06-28 | Halbleiterspeicheranordnung |
DE69531715T Expired - Fee Related DE69531715T2 (de) | 1994-06-28 | 1995-06-28 | Leseverstärker für Halbleiterspeicheranordnung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69534964T Expired - Fee Related DE69534964T2 (de) | 1994-06-28 | 1995-06-28 | Halbleiterspeicheranordnung |
Country Status (4)
Country | Link |
---|---|
US (4) | US5594697A (de) |
EP (2) | EP0690449B1 (de) |
KR (1) | KR0159183B1 (de) |
DE (2) | DE69534964T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW307071B (en) * | 1996-03-05 | 1997-06-01 | Microchip Tech Inc | Method and apparatus useful in electronic encoders having a voltage level detection circuit |
FR2766594B1 (fr) * | 1997-07-24 | 2000-01-28 | Sgs Thomson Microelectronics | Dispositif de re-initialisation a commande externe pour une memoire non volatile en circuit integre |
JP3611497B2 (ja) | 2000-03-02 | 2005-01-19 | 松下電器産業株式会社 | 電流センスアンプ |
US6963506B1 (en) * | 2003-10-03 | 2005-11-08 | Advanced Micro Devices, Inc. | Circuit and technique for accurately sensing low voltage flash memory devices |
DE602004018687D1 (de) * | 2004-02-19 | 2009-02-05 | Spansion Llc | Strom-spannungs-umsetzungsschaltung und steuerverfahren dafür |
US7215251B2 (en) * | 2004-04-13 | 2007-05-08 | Impinj, Inc. | Method and apparatus for controlled persistent ID flag for RFID applications |
KR100587080B1 (ko) * | 2004-05-17 | 2006-06-08 | 주식회사 하이닉스반도체 | 메모리 장치의 감지 증폭기를 제어하여 컬럼성 페일을검출하는 방법 및 그 장치 |
WO2008047416A1 (fr) * | 2006-10-18 | 2008-04-24 | Spansion Llc | Circuit de détection de tension |
US7649406B2 (en) * | 2007-09-13 | 2010-01-19 | United Memories, Inc. | Short-circuit charge-sharing technique for integrated circuit devices |
US7561484B2 (en) * | 2007-12-13 | 2009-07-14 | Spansion Llc | Reference-free sampled sensing |
JP2009151886A (ja) * | 2007-12-21 | 2009-07-09 | Toshiba Corp | 半導体記憶装置 |
US7916537B2 (en) * | 2009-06-11 | 2011-03-29 | Seagate Technology Llc | Multilevel cell memory devices having reference point cells |
US8985850B1 (en) * | 2009-10-30 | 2015-03-24 | Cypress Semiconductor Corporation | Adaptive gate driver strength control |
TWI475565B (zh) * | 2012-09-06 | 2015-03-01 | Univ Nat Chiao Tung | 靜態隨機存取記憶體的控制電路及其操作方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4535259A (en) * | 1982-06-18 | 1985-08-13 | Seeq Technology, Inc. | Sense amplifier for use with a semiconductor memory array |
JPS60136084A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体集積回路装置 |
JPS62222498A (ja) * | 1986-03-10 | 1987-09-30 | Fujitsu Ltd | 消去及び書き込み可能な読み出し専用メモリ |
JPS63131396A (ja) * | 1986-11-20 | 1988-06-03 | Ricoh Co Ltd | 半導体メモリ装置のセンス回路 |
JPH07105152B2 (ja) * | 1988-03-09 | 1995-11-13 | 株式会社東芝 | 不揮発性メモリ回路装置 |
JPH02154394A (ja) * | 1988-12-06 | 1990-06-13 | Mitsubishi Electric Corp | 半導体メモリ装置 |
US5142495A (en) * | 1989-03-10 | 1992-08-25 | Intel Corporation | Variable load for margin mode |
KR920000403B1 (ko) * | 1989-09-23 | 1992-01-13 | 현대전자산업 주식회사 | 개선된 붙스트래핑 레벨 조정회로 |
JPH03113800A (ja) * | 1989-09-25 | 1991-05-15 | Hitachi Ltd | 半導体不揮発性記憶装置 |
JP2508888B2 (ja) * | 1990-05-22 | 1996-06-19 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
US5132576A (en) * | 1990-11-05 | 1992-07-21 | Ict International Cmos Technology, Inc. | Sense amplifier having load device providing improved access time |
US5142496A (en) * | 1991-06-03 | 1992-08-25 | Advanced Micro Devices, Inc. | Method for measuring VT 's less than zero without applying negative voltages |
US5268871A (en) * | 1991-10-03 | 1993-12-07 | International Business Machines Corporation | Power supply tracking regulator for a memory array |
JPH05266680A (ja) * | 1992-03-19 | 1993-10-15 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
KR960000837B1 (ko) * | 1992-12-02 | 1996-01-13 | 삼성전자주식회사 | 반도체 메모리장치 |
-
1995
- 1995-06-26 US US08/494,827 patent/US5594697A/en not_active Expired - Lifetime
- 1995-06-28 DE DE69534964T patent/DE69534964T2/de not_active Expired - Fee Related
- 1995-06-28 DE DE69531715T patent/DE69531715T2/de not_active Expired - Fee Related
- 1995-06-28 EP EP95110088A patent/EP0690449B1/de not_active Expired - Lifetime
- 1995-06-28 KR KR1019950017895A patent/KR0159183B1/ko not_active IP Right Cessation
- 1995-06-28 EP EP03003959A patent/EP1313104B1/de not_active Expired - Lifetime
-
1996
- 1996-08-26 US US08/697,508 patent/US5706242A/en not_active Expired - Lifetime
- 1996-08-26 US US08/697,511 patent/US5841698A/en not_active Expired - Lifetime
- 1996-08-26 US US08/697,507 patent/US5687126A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR0159183B1 (ko) | 1999-02-01 |
US5706242A (en) | 1998-01-06 |
DE69534964D1 (de) | 2006-06-01 |
DE69534964T2 (de) | 2006-08-31 |
DE69531715T2 (de) | 2004-03-25 |
EP1313104A1 (de) | 2003-05-21 |
EP0690449B1 (de) | 2003-09-10 |
US5841698A (en) | 1998-11-24 |
US5594697A (en) | 1997-01-14 |
EP1313104B1 (de) | 2006-04-26 |
EP0690449A3 (de) | 1999-01-13 |
EP0690449A2 (de) | 1996-01-03 |
US5687126A (en) | 1997-11-11 |
KR960002366A (ko) | 1996-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69524572D1 (de) | Leseverstärkerschaltung für Halbleiterspeicheranordnungen | |
GB2287336B (en) | Sense amplifier for semiconductor memory device | |
DE69509931D1 (de) | Halbleiterspeicheranordnung | |
DE69521159D1 (de) | Halbleiterspeicheranordnung | |
DE69422901D1 (de) | Halbleiterspeicheranordnung | |
DE69520902D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
DE69603632D1 (de) | Halbleiter-Speicheranordnung | |
DE69630858D1 (de) | Vorladungsschaltung für eine Halbleiterspeicheranordnung | |
DE69512700D1 (de) | Halbleiterspeicheranordnung | |
DE69527668D1 (de) | Anschlussstelle für Halbleiterbauelement | |
DE69615783D1 (de) | Halbleiterspeicheranordnung | |
KR960012510A (ko) | 반도체 메모리 장치 | |
DE69606170D1 (de) | Halbleiterspeicheranordnung | |
DE69520254D1 (de) | Halbleiterspeicher | |
DE59508581D1 (de) | Halbleiterbauelement | |
DE69524200D1 (de) | Leseverstärker für nicht-flüchtigen halbleiterspeicher | |
DE69531715D1 (de) | Leseverstärker für Halbleiterspeicheranordnung | |
DE69525583D1 (de) | Halbleiterspeicheranordnung | |
DE69522789D1 (de) | Halbleitervorrichtung | |
DE69530266D1 (de) | Halbleiterspeicheranordnung | |
DE69430944D1 (de) | Halbleiterspeicheranordnung | |
DE69513207D1 (de) | Halbleitervorrichtung | |
KR960011703A (ko) | 반도체 메모리 | |
DE69521066D1 (de) | Halbleiterspeicheranordnung | |
DE69526834D1 (de) | Halbleiterspeicher |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |
|
8339 | Ceased/non-payment of the annual fee |