DE69430944D1 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE69430944D1
DE69430944D1 DE69430944T DE69430944T DE69430944D1 DE 69430944 D1 DE69430944 D1 DE 69430944D1 DE 69430944 T DE69430944 T DE 69430944T DE 69430944 T DE69430944 T DE 69430944T DE 69430944 D1 DE69430944 D1 DE 69430944D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69430944T
Other languages
English (en)
Inventor
George Nakane
Toshio Mukunoki
Nobuyuki Moriwaki
Tatsumi Sumi
Hiroshige Hirano
Tetsuji Nakakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69430944D1 publication Critical patent/DE69430944D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14Dummy cell management; Sense reference voltage generators
DE69430944T 1994-02-15 1994-11-07 Halbleiterspeicheranordnung Expired - Lifetime DE69430944D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01826994A JP3191550B2 (ja) 1994-02-15 1994-02-15 半導体メモリ装置

Publications (1)

Publication Number Publication Date
DE69430944D1 true DE69430944D1 (de) 2002-08-14

Family

ID=11966943

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69430944T Expired - Lifetime DE69430944D1 (de) 1994-02-15 1994-11-07 Halbleiterspeicheranordnung

Country Status (7)

Country Link
US (1) US5546342A (de)
EP (1) EP0667621B1 (de)
JP (1) JP3191550B2 (de)
KR (1) KR950025777A (de)
CN (1) CN1117192A (de)
DE (1) DE69430944D1 (de)
TW (1) TW293906B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5764561A (en) * 1995-11-16 1998-06-09 Rohm Co., Ltd. Ferroelectric memory devices and method of using ferroelectric capacitors
US6330178B1 (en) 1996-02-28 2001-12-11 Hitachi, Ltd. Ferroelectric memory device
WO1997032311A1 (fr) * 1996-02-28 1997-09-04 Hitachi, Ltd. Memoire ferroelectrique
JPH09288891A (ja) * 1996-04-19 1997-11-04 Matsushita Electron Corp 半導体メモリ装置
JP3933736B2 (ja) * 1996-12-09 2007-06-20 ローム株式会社 強誘電体コンデンサを備えた半導体装置
JP3731130B2 (ja) * 1997-06-05 2006-01-05 松下電器産業株式会社 強誘電体メモリ装置及びその駆動方法
JP4030076B2 (ja) * 1997-07-18 2008-01-09 ローム株式会社 処理機能付記憶装置
JPH11120797A (ja) * 1997-10-15 1999-04-30 Toshiba Microelectronics Corp 強誘電体メモリ及びそのスクリーニング方法
US6545902B2 (en) 1998-08-28 2003-04-08 Hitachi, Ltd. Ferroelectric memory device
GB2346462B (en) * 1999-02-05 2003-11-26 Gec Marconi Comm Ltd Memories
TWI344625B (en) 2005-03-08 2011-07-01 Epson Imaging Devices Corp Driving circuit of display device, driving circuit of electro-optical device, and electronic apparatus
JP2008135136A (ja) * 2006-11-29 2008-06-12 Fujitsu Ltd 強誘電体メモリおよび強誘電体メモリの動作方法
US9361965B2 (en) * 2013-10-11 2016-06-07 Texas Instruments Incorporated Circuit and method for imprint reduction in FRAM memories
US9721639B1 (en) 2016-06-21 2017-08-01 Micron Technology, Inc. Memory cell imprint avoidance
US20240029773A1 (en) * 2020-09-22 2024-01-25 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3768071A (en) * 1972-01-24 1973-10-23 Ibm Compensation for defective storage positions
US4045779A (en) * 1976-03-15 1977-08-30 Xerox Corporation Self-correcting memory circuit
US4337522A (en) * 1980-04-29 1982-06-29 Rca Corporation Memory circuit with means for compensating for inversion of stored data
JPS6148192A (ja) * 1984-08-11 1986-03-08 Fujitsu Ltd 半導体記憶装置
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US5267204A (en) * 1991-10-18 1993-11-30 Texas Instruments Incorporated Method and circuitry for masking data in a memory device

Also Published As

Publication number Publication date
JP3191550B2 (ja) 2001-07-23
EP0667621A2 (de) 1995-08-16
JPH07226086A (ja) 1995-08-22
KR950025777A (ko) 1995-09-18
US5546342A (en) 1996-08-13
EP0667621B1 (de) 2002-07-10
EP0667621A3 (de) 1996-02-07
TW293906B (de) 1996-12-21
CN1117192A (zh) 1996-02-21

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Legal Events

Date Code Title Description
8332 No legal effect for de