ITUA20161478A1 - Circuito e metodo di lettura di una cella di memoria di un dispositivo di memoria non volatile - Google Patents
Circuito e metodo di lettura di una cella di memoria di un dispositivo di memoria non volatileInfo
- Publication number
- ITUA20161478A1 ITUA20161478A1 ITUA2016A001478A ITUA20161478A ITUA20161478A1 IT UA20161478 A1 ITUA20161478 A1 IT UA20161478A1 IT UA2016A001478 A ITUA2016A001478 A IT UA2016A001478A IT UA20161478 A ITUA20161478 A IT UA20161478A IT UA20161478 A1 ITUA20161478 A1 IT UA20161478A1
- Authority
- IT
- Italy
- Prior art keywords
- reading
- circuit
- memory cell
- memory device
- volatile memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/12—Equalization of bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITUA2016A001478A ITUA20161478A1 (it) | 2016-03-09 | 2016-03-09 | Circuito e metodo di lettura di una cella di memoria di un dispositivo di memoria non volatile |
US15/275,362 US9865356B2 (en) | 2016-03-09 | 2016-09-24 | Circuit and method for reading a memory cell of a non-volatile memory device |
CN201621091075.6U CN206489880U (zh) | 2016-03-09 | 2016-09-28 | 读取电路及非易失性存储器器件 |
CN201610862920.3A CN107180652B (zh) | 2016-03-09 | 2016-09-28 | 用于读取非易失性存储器器件的存储器单元的电路和方法 |
EP16194682.7A EP3217405B1 (en) | 2016-03-09 | 2016-10-19 | Circuit and method for reading a memory cell of a non-volatile memory device |
US15/862,397 US10249373B2 (en) | 2016-03-09 | 2018-01-04 | Circuit and method for reading a memory cell of a non-volatile memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITUA2016A001478A ITUA20161478A1 (it) | 2016-03-09 | 2016-03-09 | Circuito e metodo di lettura di una cella di memoria di un dispositivo di memoria non volatile |
Publications (1)
Publication Number | Publication Date |
---|---|
ITUA20161478A1 true ITUA20161478A1 (it) | 2017-09-09 |
Family
ID=56026950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITUA2016A001478A ITUA20161478A1 (it) | 2016-03-09 | 2016-03-09 | Circuito e metodo di lettura di una cella di memoria di un dispositivo di memoria non volatile |
Country Status (4)
Country | Link |
---|---|
US (2) | US9865356B2 (it) |
EP (1) | EP3217405B1 (it) |
CN (2) | CN206489880U (it) |
IT (1) | ITUA20161478A1 (it) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITUA20161478A1 (it) * | 2016-03-09 | 2017-09-09 | St Microelectronics Srl | Circuito e metodo di lettura di una cella di memoria di un dispositivo di memoria non volatile |
IT201700108905A1 (it) * | 2017-09-28 | 2019-03-28 | St Microelectronics Srl | Memoria a cambiamento di fase con selettori in tecnologia bjt e relativo metodo di lettura differenziale |
IT201800003622A1 (it) * | 2018-03-15 | 2019-09-15 | St Microelectronics Srl | Circuito traslatore di livello con migliorata efficienza e capacita' di traslazione di livello in due domini, in particolare per l'utilizzo in un dispositivo di memoria |
IT201800003796A1 (it) * | 2018-03-20 | 2019-09-20 | St Microelectronics Srl | Dispositivo di memoria non volatile con modalita' di lettura commutabile e relativo metodo di lettura |
US10319425B1 (en) * | 2018-03-29 | 2019-06-11 | QUALCOMM Technologies Incorporated | Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits |
IT201800005084A1 (it) | 2018-05-04 | 2019-11-04 | Dispositivo di memoria non volatile, in particolare a cambiamento di fase e relativo metodo di lettura | |
CN110491423A (zh) * | 2019-08-12 | 2019-11-22 | 北京航空航天大学 | 一种非易失性存储器的数据读取电路及其方法 |
US11450364B2 (en) * | 2020-08-27 | 2022-09-20 | Taiwan Semiconductor Manufacturing Company Ltd. | Computing-in-memory architecture |
CN113126817B (zh) * | 2021-03-12 | 2024-08-27 | 汇顶科技私人有限公司 | 电容感测电路、相关芯片及触控装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6307797B1 (en) * | 1999-11-30 | 2001-10-23 | Stmicroelectronics S.A. | Reading device for integrated circuit memory |
US6496434B1 (en) * | 2000-08-25 | 2002-12-17 | Micron Technology Inc. | Differential sensing in a memory using two cycle pre-charge |
US20080273397A1 (en) * | 2007-05-03 | 2008-11-06 | Hendrickson Nicholas T | Switched bitline VTH sensing for non-volatile memories |
US20150318025A1 (en) * | 2014-05-02 | 2015-11-05 | Samsung Electronics Co., Ltd. | Memory device with reduced operating current |
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DE69524572T2 (de) * | 1995-04-28 | 2002-08-22 | Stmicroelectronics S.R.L., Agrate Brianza | Leseverstärkerschaltung für Halbleiterspeicheranordnungen |
EP0814484B1 (en) * | 1996-06-18 | 2003-09-17 | STMicroelectronics S.r.l. | Nonvolatile memory with a single-cell reference signal generating circuit for reading memory cells |
DE69631123D1 (de) * | 1996-06-18 | 2004-01-29 | St Microelectronics Srl | Verfahren und Schaltung zum Lesen von nichtflüchtigen Speicherzellen mit niedriger Versorgungsspannung |
EP0961285B1 (en) * | 1998-05-29 | 2003-12-17 | STMicroelectronics S.r.l. | Device and method for reading nonvolatile memory cells |
EP1028433B1 (en) * | 1999-02-10 | 2004-04-28 | SGS-THOMSON MICROELECTRONICS s.r.l. | Nonvolatile memory and reading method therefor |
DE69911591D1 (de) * | 1999-07-22 | 2003-10-30 | St Microelectronics Srl | Leseschaltung für einen nichtflüchtigen Speicher |
US6359821B1 (en) * | 2000-08-25 | 2002-03-19 | Micron Technology, Inc. | Differential sensing in a memory with reference current |
US6310809B1 (en) * | 2000-08-25 | 2001-10-30 | Micron Technology, Inc. | Adjustable pre-charge in a memory |
EP1327992B1 (en) * | 2002-01-11 | 2005-03-30 | STMicroelectronics S.r.l. | Architecture for a flash-EEPROM simultaneously readable in other sectors while erasing and/or programming one or more different sectors |
US6768692B2 (en) * | 2002-07-29 | 2004-07-27 | International Business Machines Corporation | Multiple subarray DRAM having a single shared sense amplifier |
JP3872062B2 (ja) * | 2004-02-10 | 2007-01-24 | シャープ株式会社 | 半導体記憶装置 |
US7460387B2 (en) * | 2007-01-05 | 2008-12-02 | International Business Machines Corporation | eDRAM hierarchical differential sense amp |
JP2008293605A (ja) * | 2007-05-25 | 2008-12-04 | Elpida Memory Inc | 半導体記憶装置 |
US7848166B2 (en) * | 2008-03-11 | 2010-12-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit and method for a Vdd level memory sense amplifier |
US7830716B2 (en) * | 2008-06-06 | 2010-11-09 | Spansion Llc | Non-volatile memory string module with buffer and method |
JP2010055696A (ja) * | 2008-08-28 | 2010-03-11 | Elpida Memory Inc | 半導体記憶装置 |
JP5680819B2 (ja) * | 2008-08-29 | 2015-03-04 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | センスアンプ回路及び半導体記憶装置 |
US7848131B2 (en) * | 2008-10-19 | 2010-12-07 | Juhan Kim | High speed ferroelectric random access memory |
US8154903B2 (en) * | 2009-06-17 | 2012-04-10 | Qualcomm Incorporated | Split path sensing circuit |
JP2011034614A (ja) * | 2009-07-30 | 2011-02-17 | Elpida Memory Inc | 半導体装置及びこれを備えるシステム |
JP5359804B2 (ja) * | 2009-11-16 | 2013-12-04 | ソニー株式会社 | 不揮発性半導体メモリデバイス |
JP2012123878A (ja) * | 2010-12-09 | 2012-06-28 | Elpida Memory Inc | 半導体装置及びその制御方法 |
US8274828B2 (en) * | 2010-12-15 | 2012-09-25 | Fs Semiconductor Corp., Ltd. | Structures and methods for reading out non-volatile memory using referencing cells |
US8605521B2 (en) * | 2011-05-12 | 2013-12-10 | Micron Technology, Inc. | Sense amplifiers, memories, and apparatuses and methods for sensing a data state of a memory cell |
JP2013131262A (ja) * | 2011-12-20 | 2013-07-04 | Elpida Memory Inc | 半導体装置 |
JP2013157044A (ja) * | 2012-01-27 | 2013-08-15 | Elpida Memory Inc | 半導体装置 |
JP2013171602A (ja) * | 2012-02-20 | 2013-09-02 | Elpida Memory Inc | 半導体装置 |
WO2013145733A1 (ja) * | 2012-03-29 | 2013-10-03 | パナソニック株式会社 | クロスポイント型抵抗変化不揮発性記憶装置 |
WO2014080756A1 (ja) * | 2012-11-22 | 2014-05-30 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置 |
GB2512844B (en) * | 2013-04-08 | 2017-06-21 | Surecore Ltd | Reduced Power Memory Unit |
KR102050812B1 (ko) * | 2013-08-22 | 2019-12-02 | 르네사스 일렉트로닉스 가부시키가이샤 | 트윈 셀의 기억 데이터를 마스크해서 출력하는 반도체 장치 |
ITUB20153235A1 (it) * | 2015-08-26 | 2017-02-26 | St Microelectronics Srl | Decodificatore di riga per un dispositivo di memoria non volatile e relativo dispositivo di memoria non volatile |
ITUA20161478A1 (it) * | 2016-03-09 | 2017-09-09 | St Microelectronics Srl | Circuito e metodo di lettura di una cella di memoria di un dispositivo di memoria non volatile |
IT201600088225A1 (it) * | 2016-08-30 | 2018-03-02 | St Microelectronics Srl | Circuito traslatore di livello, in particolare per l'utilizzo in un dispositivo di memoria, e relativo dispositivo di memoria |
-
2016
- 2016-03-09 IT ITUA2016A001478A patent/ITUA20161478A1/it unknown
- 2016-09-24 US US15/275,362 patent/US9865356B2/en active Active
- 2016-09-28 CN CN201621091075.6U patent/CN206489880U/zh active Active
- 2016-09-28 CN CN201610862920.3A patent/CN107180652B/zh active Active
- 2016-10-19 EP EP16194682.7A patent/EP3217405B1/en active Active
-
2018
- 2018-01-04 US US15/862,397 patent/US10249373B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6307797B1 (en) * | 1999-11-30 | 2001-10-23 | Stmicroelectronics S.A. | Reading device for integrated circuit memory |
US6496434B1 (en) * | 2000-08-25 | 2002-12-17 | Micron Technology Inc. | Differential sensing in a memory using two cycle pre-charge |
US20080273397A1 (en) * | 2007-05-03 | 2008-11-06 | Hendrickson Nicholas T | Switched bitline VTH sensing for non-volatile memories |
US20150318025A1 (en) * | 2014-05-02 | 2015-11-05 | Samsung Electronics Co., Ltd. | Memory device with reduced operating current |
Also Published As
Publication number | Publication date |
---|---|
EP3217405B1 (en) | 2019-05-22 |
US10249373B2 (en) | 2019-04-02 |
US20170263323A1 (en) | 2017-09-14 |
CN107180652B (zh) | 2021-04-27 |
CN206489880U (zh) | 2017-09-12 |
US20180130538A1 (en) | 2018-05-10 |
US9865356B2 (en) | 2018-01-09 |
CN107180652A (zh) | 2017-09-19 |
EP3217405A1 (en) | 2017-09-13 |
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